公开(公告)号：MY183557A

公开(公告)日：2021-02-26

申请号：MYPI2015703116

申请日：2014-03-07

Applicant: TORAY INDUSTRIES

Inventor： SAKAMOTO KEITARO ,  TONAI SHUNPEI ,  EJIRI HIROE ,  NOMURA FUMIYASU

Abstract: The present invention is a plasma CVD device provided with a vacuum chamber, and a plasma CVD electrode unit and a substrate-holding mechanism inside the vacuum chamber. The plasma CVD electrode unit is provided with an anode, a cathode that Faces the anode at a distance, and a first gas supply nozzle for supplying gas so as to Pass through the plasma-generation space between the anode and cathode. The substrate-holding mechanism is disposed at a position where the gas passing through the plasma-generation space impinges. The length of the anode in the gas-supply Direction and the length of the cathode in the gas-supply direction are both longer than the distance between the anode and the cathode. Thus, a plasma CVD device that Makes it possible to increase gas decomposition efficiency and achieve high film deposition rate is provided.

公开(公告)号：EP2975158A4

公开(公告)日：2016-11-23

申请号：EP14763228

申请日：2014-03-07

Applicant: TORAY INDUSTRIES

Inventor： SAKAMOTO KEITARO ,  TONAI SHUNPEI ,  EJIRI HIROE ,  NOMURA FUMIYASU

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/509 ,  C23C16/54 ,  H01J37/34 ,  H01L21/31 ,  H05H1/46

CPC classification number: C23C16/509 ,  B05D1/62 ,  C23C16/45574 ,  C23C16/50 ,  C23C16/54 ,  C23C16/545 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32669 ,  H01J37/32825 ,  H01J37/34 ,  H01J2237/3321

Abstract: The present invention is a plasma CVD device provided with a vacuum chamber, and a plasma CVD electrode unit and a substrate-holding mechanism inside the vacuum chamber. The plasma CVD electrode unit is provided with an anode, a cathode that faces the anode at a distance, and a first gas supply nozzle for supplying gas so as to pass through the plasma-generation space between the anode and cathode. The substrate-holding mechanism is disposed at a position where the gas passing through the plasma-generation space impinges. The length of the anode in the gas-supply direction and the length of the cathode in the gas-supply direction are both longer than the distance between the anode and the cathode. Thus, a plasma CVD device that makes it possible to increase gas decomposition efficiency and achieve high film deposition rate is provided.

公开(公告)号：EP2413349A4

公开(公告)日：2015-11-25

申请号：EP10755897

申请日：2010-03-15

Applicant: TORAY INDUSTRIES

Inventor： SAKAMOTO KEITARO ,  NOMURA FUMIYASU ,  KOMORI TSUNENORI

IPC: H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/02 ,  H01L31/04

CPC classification number: C23C16/24 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32834 ,  H01J37/32871 ,  H01L21/02422 ,  H01L21/02532 ,  H01L31/03767 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

公开(公告)号：EP2498278A4

公开(公告)日：2016-02-17

申请号：EP10826595

申请日：2010-10-21

Applicant: TORAY INDUSTRIES

Inventor： KOMORI TSUNENORI ,  AMIOKA TAKAO ,  SAKAMOTO KEITARO

IPC: H01L21/205 ,  C23C16/24 ,  C23C16/505 ,  H01J37/32 ,  H01L31/04

CPC classification number: C23C16/45591 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32568 ,  H01J37/32587 ,  H01J37/32834 ,  H01L21/02532 ,  H01L21/0262

公开(公告)号：EP2692898A4

公开(公告)日：2014-09-17

申请号：EP12764688

申请日：2012-02-14

Applicant: TORAY INDUSTRIES

Inventor： EJIRI HIROE ,  SAKAMOTO KEITARO ,  NOMURA FUMIYASU ,  UEDA MASANORI

IPC: C23C16/455 ,  C23C14/00 ,  C23C14/34 ,  C23C14/56 ,  C23C16/54

CPC classification number: C23C14/0063 ,  C23C14/0068 ,  C23C14/562 ,  C23C16/401 ,  C23C16/402 ,  C23C16/455 ,  C23C16/45517 ,  C23C16/50 ,  C23C16/545 ,  H01J37/32559 ,  H01J37/32568 ,  H01J37/32752 ,  H01J37/3277 ,  H01J37/3405 ,  H01J37/3417 ,  H01J2237/3321 ,  H01J2237/3325

Abstract: A plasma CVD apparatus comprising a vacuum chamber, and a main roll and a plasma generation electrode in the vacuum chamber, wherein a thin film is formed on a surface of a long substrate which is conveyed along the surface of the main roll is provided. At least one side wall extending in transverse direction of the long substrate is provided on each of the upstream and downstream sides in the machine direction of the long substrate, and the side walls surrounds the film deposition space between the main roll and the plasma generation electrode. The side walls are electrically insulated from the plasma generation electrode. The side wall on either the upstream or the downstream side in the machine direction of the long substrate is provided with at least one raw of gas supply holes formed by gas supply holes aligned in the transverse direction of the long substrate.