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公开(公告)号：DE69132403T2
公开(公告)日：2001-03-29
申请号：DE69132403
申请日：1991-01-31
Applicant: TORAY INDUSTRIES
Inventor： SHIRO KUNIYASU , HIMESHIMA YOSHIO , YAMADA SHINICHI , WATANABE TETSUO , UEMURA TADAHIRO , KURIHARA MASARU
Abstract: A composite membrane excellent in the resistance to organic solvent, heat and organic vapor and usable for pervaporation, gas separation and reverse osmosis, which is composed of a porous membrane mainly comprising a polymer having repeating units of formula (I) and an active layer formed thereon: -( Ph - S - Ph SO2 -)n (I) wherein Ph represents phenyl and n is a natural number.
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公开(公告)号：DE69937355T2
公开(公告)日：2008-07-24
申请号：DE69937355
申请日：1999-08-25
Applicant: TORAY INDUSTRIES
Inventor： SHIRO KUNIYASU , HASHISAKA KAZUHIKO , OKA TETSUO
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公开(公告)号：AT375847T
公开(公告)日：2007-11-15
申请号：AT99940476
申请日：1999-08-25
Applicant: TORAY INDUSTRIES
Inventor： SHIRO KUNIYASU , HASHISAKA KAZUHIKO , OKA TETSUO
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公开(公告)号：DE69132403D1
公开(公告)日：2000-10-12
申请号：DE69132403
申请日：1991-01-31
Applicant: TORAY INDUSTRIES
Inventor： SHIRO KUNIYASU , HIMESHIMA YOSHIO , YAMADA SHINICHI , WATANABE TETSUO , UEMURA TADAHIRO , KURIHARA MASARU
Abstract: A composite membrane excellent in the resistance to organic solvent, heat and organic vapor and usable for pervaporation, gas separation and reverse osmosis, which is composed of a porous membrane mainly comprising a polymer having repeating units of formula (I) and an active layer formed thereon: -( Ph - S - Ph SO2 -)n (I) wherein Ph represents phenyl and n is a natural number.
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公开(公告)号：DE69937355D1
公开(公告)日：2007-11-29
申请号：DE69937355
申请日：1999-08-25
Applicant: TORAY INDUSTRIES
Inventor： SHIRO KUNIYASU , HASHISAKA KAZUHIKO , OKA TETSUO
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Patent Agency Ranking
公开(公告)号：AT337137T
公开(公告)日：2006-09-15
申请号：AT99954409
申请日：1999-11-05
Applicant: TORAY INDUSTRIES
Inventor： SHIRO KUNIYASU , MINAMIGUCHI HISASHI , OKA TETSUO
Abstract: The present invention relates to a polishing pad which is characterized in that it has a polishing layer of rubber A-type microhardness at least 80 DEG and a cushioning layer of bulk modulus at least 40 MPa and tensile modulus in the range 0.1 MPa to 20 MPa, and to a polishing device which is characterized in that a semiconductor substrate is fixed to the polishing head, and an aforesaid polishing pad is fixed to the polishing platen so that the polishing layer faces the semiconductor substrate, and by rotating the aforesaid polishing head or the polishing platen, or both, the semiconductor substrate is polished. With the polishing device or polishing pad of the present invention for use in the mechanical planarizing process wherein the surface of the insulating layers or metal interconnects formed on a semiconductor substrate are smoothened, it is possible to uniformly planarize the entire semiconductor face and perform uniform polishing close up to the wafer edge and, furthermore, it is possible to provide a technique for achieving both uniformity and planarity under conditions of high platen rotation rate.
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公开(公告)号：DE69932945T2
公开(公告)日：2007-03-15
申请号：DE69932945
申请日：1999-11-05
Applicant: TORAY INDUSTRIES
Inventor： SHIRO KUNIYASU , MINAMIGUCHI HISASHI , OKA TETSUO
Abstract: The present invention relates to a polishing pad which is characterized in that it has a polishing layer of rubber A-type microhardness at least 80 DEG and a cushioning layer of bulk modulus at least 40 MPa and tensile modulus in the range 0.1 MPa to 20 MPa, and to a polishing device which is characterized in that a semiconductor substrate is fixed to the polishing head, and an aforesaid polishing pad is fixed to the polishing platen so that the polishing layer faces the semiconductor substrate, and by rotating the aforesaid polishing head or the polishing platen, or both, the semiconductor substrate is polished. With the polishing device or polishing pad of the present invention for use in the mechanical planarizing process wherein the surface of the insulating layers or metal interconnects formed on a semiconductor substrate are smoothened, it is possible to uniformly planarize the entire semiconductor face and perform uniform polishing close up to the wafer edge and, furthermore, it is possible to provide a technique for achieving both uniformity and planarity under conditions of high platen rotation rate.
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公开(公告)号：CA1320025C
公开(公告)日：1993-07-13
申请号：CA544405
申请日：1987-08-13
Applicant: TORAY INDUSTRIES
Inventor： YAMADA SHINICHI , SHIRO KUNIYASU
Abstract: 72643-1 A gas separation membrane with excellent gas separation properties. The gas separation membrane of the present invention is substantially free from pinholes and consists essentially of a crosslinked polyolefin or a crosslinked polyarylene oxide. The gas separation membrane of the present invention is produced by evaporating a solution containing a polyolefin or a polyarylene oxide each having an active functional group which can autogenically form crosslinking sites therebetween.
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公开(公告)号：DE3769242D1
公开(公告)日：1991-05-16
申请号：DE3769242
申请日：1987-08-13
Applicant: TORAY INDUSTRIES
Inventor： YAMADA SHINICHI , SHIRO KUNIYASU
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公开(公告)号：EP1983558A4
公开(公告)日：2011-08-10
申请号：EP07707576
申请日：2007-01-29
Applicant: TORAY INDUSTRIES
Inventor： SHIRO KUNIYASU , HONDA TOMOYUKI , HANAMOTO MIYUKI
IPC: H01L21/304 , B24B37/04 , B24B37/20 , B24D13/14
CPC classification number: B24B37/205
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