FORMATION OF SUPERCONDUCTIVE THIN FILM

    公开(公告)号:JPH02302322A

    公开(公告)日:1990-12-14

    申请号:JP12040989

    申请日:1989-05-16

    Abstract: PURPOSE:To form the subject superconductive thin film having a high critical temperature at a low cost by forming a thin film of a solution composed of respective alkoxides or alkoxyalkolates of Bi, Ca, Sr, Cu and Pb, an alkanolamine and an alcohol on a substrate, gelling and then sintering. CONSTITUTION:A mixed solution containing respective alkoxides (methoxide, ethoxide, propoxide, butoxide, etc.) or alkoxyalkolates (methoxyethylate, ethoxyethylate, propoxyethylate, butoxyethylate, etc.) of respective metals such as Bi, Ca, Sr, Cu and Pb, an alkanolamine and an alcohol is coated on a heat- resistant substrate to form a thin film. The resultant thin film is gelled by drying and then sintered at 750 to 870 deg.C, thus forming the objective superconductive thin film represented by (Bi1-pPbp)(Sr1-qCaq)xCuyOz (0 =105K and Jc>=10 A/ cm .

    FORMATION OF LEAD TITANATE ZIRCONATE THIN FILM

    公开(公告)号:JPH026335A

    公开(公告)日:1990-01-10

    申请号:JP32449788

    申请日:1988-12-21

    Abstract: PURPOSE:To form a PZT thin film having excellent uniformity with a simple operation by coating a substrate with an alcohol solution composed of alkoxides of Pb, Zr and Ti added with ethanolamine, drying and gelatinizing the coating film and calcining the product. CONSTITUTION:A thin film of lead titanate zirconate (PZT) can be produced by mixing (A) a lead alkoxide or a lead salt [selected from methoxide, ethoxide, propoxide, butoxide and acetate (hydrate)], (B) a Zr alkoxide (selected from methoxide, ethoxide, propoxide and butoxide), (C) a Ti alkoxide (selected from methoxide, ethoxide, propoxide and butoxide), (D) (mono, di or tri)ethanolamine and (E) a 1-4C alcohol, forming a thin film of the mixture on a substrate by dip-coating process, drying and gelatinizing the coating film, introducing the gelatinized thin film together with the substrate into a furnace and calcining at 600-800 deg.C.

    METHOD FOR FORMING ZIRCONIA THIN FILM

    公开(公告)号:JPH01108164A

    公开(公告)日:1989-04-25

    申请号:JP26360987

    申请日:1987-10-19

    Abstract: PURPOSE:To obtain the titled homogeneous thin film useful as protective films, dielectric films, etc., without causing cracking or uneven thickness, by forming a thin film of a blend of a specific zirconium alkoxide with a specific hydrolytic inhibitor and solvent on a substrate, drying, gelatinizing and calcining the resul tant thin film. CONSTITUTION:A thin film of a blend containing at least one zirconium alkoxide selected from zirconium methoxide, ethoxide, propoxide and butoxide, one hydrolytic inhibitor selected from monoethanolamine, diethanolamine and triethanolamine and one solvent selected from methanol, ethanol, propanol and butanol is formed on a substrate (e.g. quartz glass plate), then dried and gelatinized at about ordinary temperature-80 deg.C. The resultant thin film with the substrate and all are subsequently placed in a furnace, heated to 500-1500 deg.C at 1-10 deg.C/min rate and kept for a given time, calcined and cooled to ambient temperature at 1-10 deg.C/min rate to afford the titled thin film.

    METHOD FOR FORMING TITANIA THIN FILM

    公开(公告)号:JPH01108161A

    公开(公告)日:1989-04-25

    申请号:JP26361087

    申请日:1987-10-19

    Abstract: PURPOSE:To obtain the titled homogeneous thin film useful as protective films, dielectric films, etc., without causing cracking or uneven thickness, by forming a thin film of a blend of a specific titanium alkoxide with a specified hydrolytic inhibitor and solvent on a substrate, drying, gelatinizing and calcning the resultant thin film. CONSTITUTION:A thin film of a blend containing at least one titanium alkoxide selected from titanium methoxide, ethoxide, propoxide and butoxide, one hydrolytic inhibitor selected from monoethanolamine, diethanolamine and triethanolamine and one solvent selected from methanol, ethanol, propanol and butanol is formed on a substrate (e.g. quartz glass plate), then dried and gelatinized at about ordinary temperature-80 deg.C. The resultant thin film with the substrate and all are subsequently placed in a furnace and heated to 400-1500 deg.C at 1-10 deg.C/min rate, kept for a given time, calcined and cooled to ambient temperature at 1-10 deg.C/min rate to afford the titled thin film.

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