公开(公告)号：JPH07231014A

公开(公告)日：1995-08-29

申请号：JP1921494

申请日：1994-02-16

Applicant: TORAY INDUSTRIES

Inventor： TANAKA HIDEHARU ,  TOMIYAMA YASUNAO

IPC: H01L21/60 ,  H01L21/56

Abstract: PURPOSE:To prevent the occurrence of high voltage static electricity on the TAB tape surface within a heating chamber by providing means for removing static electricity within a heating chamber in hardening a thermosetting resin applied to a semiconductor element. CONSTITUTION:Return rollers 3a and 3b are provided in a heating chamber 2, moreover many tape guides 6 are provided, and a TAB tape 1 is carried from the inlet at the left side of a heating chamber 2 to an exit at the right side. At that time, AC type ion blow apparatuses 5a, 5b and 5c of AC method as static electricity removing means are attached along the carrying region for TAB tape 1. These ion blow apparatuses 5a, 5b and 5c are respectively arranged so as to perform uniform ion blowing against the front and rear surfaces of a TAB tape 1 from the ion outlet, thereby preventing the occurrence of static electricity on the TAB tape 1. By doing this, a failure by high voltage static electricity f9 discharge can be prevented and the occurrence of defective products can be prevented.

公开(公告)号：JPH05343477A

公开(公告)日：1993-12-24

申请号：JP17370892

申请日：1992-06-09

Applicant: TORAY INDUSTRIES

Inventor： TANAKA HIDEHARU ,  TOMIYAMA YASUNAO

IPC: H01L21/56 ,  H01L21/60 ,  H01L23/50

Abstract: PURPOSE:To obtain a small-sized molded package by a method wherein an improved TAB tape is used, the outflow of a molding resin in a molding operation is prevented, the efficiency of the molding operation is enhanced and materials are saved. CONSTITUTION:An IC chip 4 is inserted in a device hole 3 which has been made in a film carrier 1; an improved TAB tape 19 in which dam bars 10 used to bury parts between inner leads 6 so as to be the same height as the inner leads 6 is used; only the IC chip 4 and the inner leads 6 are molded on the film carrier at the outer circumference of the device hole 3; the leads are separated and a molded package is obtained.

公开(公告)号：JPH06216278A

公开(公告)日：1994-08-05

申请号：JP516293

申请日：1993-01-14

Applicant: TORAY INDUSTRIES

Inventor： TAGUCHI KAZUHIRO ,  TOMIYAMA YASUNAO ,  TANAKA MASAYUKI

IPC: H01L23/29 ,  H01L23/31

Abstract: PURPOSE:To provide a method of fabricating a resin sealed semiconductor device, which does not require the process for previously coating the area between leads on a support ring with a sealing resin and does not result in the flow of resin from metal dies during the molding process even if arrangement of leads is made nonuniformly. CONSTITUTION:In a method for fabricating a resin sealed semiconductor device where a film carrier of IC junction TAB tape and a lead provided on the film carrier are held by upper and lower metal dies 12, 13 and an epoxy resin compound including epoxy resin, hardening agent and filler is poured to a resin supply port 19 of the dies, mixing rate of the filler is set to 65 to 95wt.% of the epoxy resin composition as a whole. Moreover, the filler includes a first inorganic filler having the average grain size of 0.8 to 1.5 times the thickness of the space formed between the leads provided on the film carrier and mixing rate of the first inorganic filler is set to 5 to 50wt.% of the filler as a whole.

公开(公告)号：JPH05343459A

公开(公告)日：1993-12-24

申请号：JP17371092

申请日：1992-06-09

Applicant: TORAY INDUSTRIES

Inventor： TOMIYAMA YASUNAO ,  TANAKA HIDEHARU

IPC: H01L21/56 ,  H01L21/60

Abstract: PURPOSE:To prevent that the outer surface of an IC chip comes into contact with an inner lead and to manufacture the chip whose thickness is thin after a molding operation has been completed by a method wherein the surface near the bonding point of the IC chip to the inner lead is covered with a covering resin. CONSTITUTION:The surface near the bonding point of an IC chip 4 to an inner lead 6 is covered with a covering resin 9; the inner lead 6 is bent in the direction of the IC chip 4; in a state that the inner lead is situated within the thickness range of the IC chip 4, a transfer molding operation is executed. For example, an IC chip 4 is bonded to an inner lead 6 by a method which is the same as that in conventional cases. Then, the surface from the bonding part of the IC chip 4 to the inner lead 6 up to a chip terminal is coated with a resin 9; the resin is hardened. Then, the inner lead 6 which has been bent to the upper side is pressed to the lower side; the inner lead 6 is bent in such a way that it is put within the range of the upper and lower width of the IC chip 4. In this state, a TAB tape to which the IC, chip has been bonded is transfer-molded.