公开(公告)号：JPH0982213A

公开(公告)日：1997-03-28

申请号：JP23034695

申请日：1995-09-07

Applicant: TOSHIBA CORP

Inventor： HASEGAWA TOSHIMICHI ,  NAKAMOTO MASAYUKI

IPC: H01J9/02 ,  H01J1/304 ,  H01J3/02 ,  H01J3/18 ,  H01J9/14 ,  H01J29/04 ,  H01J29/62 ,  H01J31/12 ,  H01J1/30

Abstract: PROBLEM TO BE SOLVED: To provide a field emission type cold cathode device and its manufacture capable of sufficiently restraining the spread-out of electron beam without complicating a manufacturing process. SOLUTION: The recessed portion on the substrate 35 side of an emitter 31 with the end 31a sharply protruded is buried with a resistance layer 33 and jointed to a glass substrate 35 via an emitter feeding electrode layer 34. A focusing electrode 36 has the top 36a approximately parallel to the face 35a of the substrate and the side 36b. A gate electrode 38 is arranged with an opening 38a to protrude the emitter end 31a therein and an opening 38b to correspond to the top 36a of the focusing electrode 36. An insulating layer 39 is formed between the gate electrode 38 and the emitter 31.

公开(公告)号：JPH09231919A

公开(公告)日：1997-09-05

申请号：JP3372096

申请日：1996-02-21

Applicant: TOSHIBA CORP

Inventor： SUZUKI TAKETOSHI ,  NAKAMOTO MASAYUKI ,  HASEGAWA TOSHIMICHI

IPC: H01J31/12

Abstract: PROBLEM TO BE SOLVED: To prevent a leak and a short circuit between a gate line electrode and a cathode line electrode. SOLUTION: An array 14a of an emitter 14 and a gate electrode 16 for emitting electrons from the emitter 14 are provided so as to correspond to each of several picture elements arranged in a matrix shape within a picture element area. The emitter array 14a is connected to a cathode line 12, and the gate electrode 16 is connected to a gate line 17 provided on the cathode line 12 through an insulating film. The cathode line 12 and the gate line 17 form a grid defined by square/rectangular grid units 12a and 17a having the same size. The cathode line 12 and the gate line 17 are alternately arranged in both longitudinal and transverse directions so as to be in parallel and shift a phase by a half cycle.

公开(公告)号：JPH11135041A

公开(公告)日：1999-05-21

申请号：JP29543297

申请日：1997-10-28

Applicant: TOSHIBA CORP

Inventor： IIDA ATSUKO ,  NAKAMOTO MASAYUKI ,  YASUMOTO YASUAKI ,  FUKUDA KATSUYOSHI ,  HASEGAWA TOSHIMICHI

IPC: H01J29/86 ,  G09F9/30 ,  H01J29/90 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To suppress crack formation of a frit glass seal part in a part in contact with a wiring part, to prevent the leakage, and to provide high efficiency and reliability by forming an inner terminal and an outer terminal in the sealing inside and the sealing outside of a first substrate, electrically connecting to each other, and wiring a lead wire via the inside of the first substrate. SOLUTION: A vacuum airtight container is provided with a cathode array substrate 8, a frame intermediate panel 7, and a front panel 9 on a rear panel 1 in order. Outer terminals 3, 5 connected to the inner lead wire are provided in the rear face of the rear panel 1. The rear panel 1 is provided with a recess part for storing the cathode array substrate 8, and an array inner terminal electrode and an inner terminal electrode for an anode electrode are formed on the circumferential part. The front panel 9 is provided with a transparent electrode and an anode electrode composed of a phosphor are provided on a transparent glass substrate.

公开(公告)号：JPH09219143A

公开(公告)日：1997-08-19

申请号：JP2259196

申请日：1996-02-08

Applicant: TOSHIBA CORP

Inventor： HASEGAWA TOSHIMICHI ,  NAKAMOTO MASAYUKI

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304

Abstract: PROBLEM TO BE SOLVED: To sufficiently pull electrons out, and thereby enlarge the quantity of current capable of being available by forming a gate electrode layer which is provided with an insulating layer having an opening, and also having an extruded part extruded higher than an opening end over the insulating layer. SOLUTION: An emitter 31 is made out of metals such as Mo and W, or Si and the like, and is opened at its tip end 32. Its opening part 33 is in a quadrangle, a recessed part 34, at its substrate side is filled with a core material, layer 35 spattered with Si , and is furthermore joined with a glass substrate 37 by way of an emitter feeding electrode layer 36 composed of Ta and the like. A gate electrode 38 has an extruded part extruded higher than an opening end over an insulating layer 40, and is so formed that the emitter tip end part 32 is thereby enclosed. A Si O2 layer 40 is formed between the electrode 38 and the emitter 31, and the opening part 33 at the tip end of the emitter is selectively etched so as to be removed in such a way as to be exposed thereto. By this constitution, the emitter tip end part 32 is thereby extruded, so that an emitter portion 31 is therefore completed.

公开(公告)号：JPH09213201A

公开(公告)日：1997-08-15

申请号：JP1744796

申请日：1996-02-02

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  CHO TOSHI ,  HASEGAWA TOSHIMICHI ,  NAKAMOTO MASAYUKI

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304 ,  H01J5/03 ,  H01J9/24

Abstract: PROBLEM TO BE SOLVED: To provide a field emission type cold cathode which can set an anode closely, by etching an etching layer at the tip of an emitter and exposing the emitter tip. SOLUTION: This field emission type cold cathode has a glass base 42; a junction layer 41 formed on the glass base 42, consisting of Al, and being a feeder layer concurrectly; and an emitter material layer 40 having plural square pyramid form projections. Furthermore, a thermal oxidation SiO2 insulator layer 39 formed on the emitter material layer 40, having an opening, and having a columnar convex bodies 14; and a gate electrode layer 35 formed on the thermal oxidation SiO2 insulator layer 39, consisting of an n type Si layer doping P, and having an opening 50 so as to expose the tip area of the projection of the emitter material layer 40, and the opening end of the thermal oxidation SiO2 insulator layer 39; are laminated, to form this structure.

公开(公告)号：JPH08264106A

公开(公告)日：1996-10-11

申请号：JP6589195

申请日：1995-03-24

Applicant: TOSHIBA CORP

Inventor： HASEGAWA TOSHIMICHI ,  NAKAMOTO MASAYUKI

IPC: H01J1/30 ,  H01J1/304

Abstract: PURPOSE: To provide a field effect type cold cathode where the quantity of electrons emitted from an emitter part is approximately fixed even after having passed the section of a gate electrode layer. CONSTITUTION: An ITO conductive layer 15 is made on a glass substrate 17, and hereon is an emitter layer 14 equipped with a pyramidal emitter section made. An SiO2 insulating layer 13 is made in the position excluding the tip part 18a of the emitter section on the emitter layer 14, and hereon is a gate electrode layer 19 made. The angle formed between the base 18b of the emitter part and the opening part 19b of the gate electrode layer is 30 deg.