PROBE FOR TESTING SEMICONDUCTOR DEVICES
    1.
    发明申请
    PROBE FOR TESTING SEMICONDUCTOR DEVICES 审中-公开
    用于测试半导体器件的探针

    公开(公告)号:WO2008127801A2

    公开(公告)日:2008-10-23

    申请号:PCT/US2008/055835

    申请日:2008-03-04

    CPC classification number: G01R1/06733 G01R1/06727 G01R3/00

    Abstract: A novel probe design is presented that increases a probe tolerance to stress fractures. Specifically, what is disclosed are three features increase stress tolerance. These features include a various union angle interface edge shapes, pivot cutouts and buffers.

    Abstract translation: 提出了一种新的探针设计,增加了对应力骨折的探针耐受性。 具体来说,公开的是增加压力容忍度的三个特征。 这些特征包括各种联合角度界面边缘形状,枢轴切口和缓冲区。

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