公开(公告)号：US20200161090A1

公开(公告)日：2020-05-21

申请号：US16752153

申请日：2020-01-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YOSHIKAWA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing container and configured to supply gas to the processing space, a dielectric member having a facing surface that faces the processing space, and an antenna provided on a surface opposite to the facing surface of the dielectric member and configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member. The gas supply unit includes a transport hole transporting the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container and an injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space. The injection hole has a diameter larger than that of the transport hole.

公开(公告)号：US20150211125A1

公开(公告)日：2015-07-30

申请号：US14605338

申请日：2015-01-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YOSHIKAWA ,  Michitaka AITA

IPC: C23C16/511

CPC classification number: C23C16/511 ,  C23C16/345 ,  H01J37/32192 ,  H01J37/3222

Abstract: Disclosed is provides a plasma processing apparatus that processes a workpiece. The plasma processing apparatus includes: a processing container configured to accommodate the workpiece; a coaxial waveguide configured to transmit microwaves generated in a microwave generator; and a slow wave plate configured to adjust a wavelength of the microwaves transmitted from the coaxial waveguide and to introduce the microwaves into the processing container. A lower end portion of an inner conductor of the coaxial waveguide has a tapered shape of which a diameter increases downwardly, the slow wave plate has an annular shape in a plan view, and the inner surface of the slow wave plate encloses the lower end portion of the inner conductor and is located more outside than an inner surface of an outer conductor of the coaxial waveguide in a radial direction.

Abstract translation: 公开了一种处理工件的等离子体处理装置。 等离子体处理装置包括：处理容器，其构造成容纳工件; 同轴波导，被配置为发送在微波发生器中产生的微波; 以及慢波板，被配置为调节从同轴波导传输的微波的波长并将微波引入处理容器。 同轴波导的内导体的下端部具有直径向下增大的锥形形状，慢波板在俯视图中呈环状，慢波板的内表面包围下端部 并且位于比同轴波导的外导体的径向外侧更外侧的位置。

公开(公告)号：US20150206712A1

公开(公告)日：2015-07-23

申请号：US14675873

申请日：2015-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naoki MATSUMOTO ,  Koji KOYAMA ,  Jun YOSHIKAWA

IPC: H01J37/32 ,  H01Q13/10

CPC classification number: H01J37/3222 ,  C23C16/511 ,  H01J37/32238 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/32137 ,  H01Q13/10 ,  H01Q21/064 ,  H01Q21/20 ,  H05H1/46 ,  H05H2001/4667

Abstract: An antenna includes a dielectric window and a slot plate provided at one surface of the dielectric window. The slot plate includes a plurality of slot pairs each being formed of two slots. The slot pairs are concentrically disposed about a centroid position of the slot plate and provided at positions where straight lines extending from the centroid position of the slot plate and passing through each slot pair are not overlapped with each other.

Abstract translation: 天线包括介电窗口和设置在电介质窗口的一个表面处的槽板。 槽板包括多个槽对，每个槽对由两个槽形成。 槽对围绕槽板的中心位置同心地设置，并且设置在从槽板的中心位置延伸并且穿过每个槽对的直线彼此不重叠的位置处。

公开(公告)号：US20150155139A1

公开(公告)日：2015-06-04

申请号：US14556596

申请日：2014-12-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YOSHIKAWA ,  Naoki MATSUMOTO ,  Masayuki SHINTAKU ,  Koji KOYAMA ,  Naoki MIHARA ,  Yugo TOMITA

IPC: H01J37/32 ,  H01P1/08

CPC classification number: H01J37/3222 ,  H01J37/32192 ,  H01J37/32238 ,  H01P1/08

Abstract: A slot plate is provided at one surface of a dielectric window. The other surface of the dielectric window includes a flat surface surrounded by an annular first recess, and a plurality of second recesses formed at a bottom surface of the first recess. An antenna including the dielectric window and the slot plate provided at one surface of the dielectric window can be applied to the plasma processing apparatus.

Abstract translation: 在电介质窗口的一个表面设置槽板。 电介质窗口的另一表面包括由环形第一凹部包围的平坦表面和形成在第一凹部的底表面处的多个第二凹部。 包括介电窗口和设置在电介质窗口的一个表面处的槽板的天线可以被施加到等离子体处理装置。

公开(公告)号：US20160358756A1

公开(公告)日：2016-12-08

申请号：US15171017

申请日：2016-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michitaka AITA ,  Jun YOSHIKAWA ,  Motoshi FUKUDOME

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

Abstract: Disclosed is a plasma processing apparatus including: a processing container that includes a bottom portion and a sidewall and defines a processing space; a microwave generator that generates microwaves; and a dielectric window attached to the sidewall of the processing container. The dielectric window is supported by a support surface formed in an upper end portion of the sidewall or a support surface formed in a conductor member disposed in the upper end portion of the sidewall, and includes a non-facing portion that does not face the processing space. Corner portions are formed on surfaces of the non-facing portion to fix a position of a node of standing waves. A distance from a sidewall corner portion to at least one of the plurality of corner portions is a distance in which a position of another node of the standing waves overlaps with a position of the sidewall corner portion.

Abstract translation: 公开了一种等离子体处理装置，包括：处理容器，其包括底部和侧壁并限定处理空间; 产生微波的微波发生器; 以及附着在处理容器的侧壁上的电介质窗。 电介质窗口由形成在侧壁的上端部中的支撑表面或形成在设置在侧壁的上端部的导体构件中的支撑表面支撑，并且包括不面向加工的不面对部分 空间。 角部分形成在不面对部分的表面上以固定驻波节点的位置。 从侧壁角部到多个角部中的至少一个的距离是驻波的另一个节点的位置与侧壁角部的位置重叠的距离。

公开(公告)号：US20160118224A1

公开(公告)日：2016-04-28

申请号：US14868554

申请日：2015-09-29

Applicant: Tokyo Electron Limited

Inventor： Masayuki KOHNO ,  Ryou SON ,  Naoki MATSUMOTO ,  Jun YOSHIKAWA ,  Michitaka AITA ,  Ippei SHIMIZU ,  Yusuke YOSHIDA ,  Koji KOYAMA ,  Masami SUDAYAMA ,  Yukiyoshi ARAMAKI

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/32266 ,  H01J37/32944

Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

Abstract translation: 提供了一种等离子体处理装置，其被配置为将气体供应到室中，使用电磁波的功率从气体产生等离子体，并且在由安装台保持的基板上执行预定的等离子体处理。 等离子体处理装置包括电介质窗，从电磁波发生器输出的电磁波通过该介质传播并传递到室内;支撑构件，其支撑介电窗口;分隔构件，其将支撑构件的空间 从等离子体产生空间排列并且包括抵靠电介质窗口的突起，以及布置在分隔构件和电介质窗口之间的导电构件，并且被保护以通过突起而暴露于等离子体产生空间。

公开(公告)号：US20200058468A1

公开(公告)日：2020-02-20

申请号：US16478770

申请日：2018-01-04

Applicant: Tokyo Electron Limited

Inventor： Kazuki TAKAHASHI ,  Yuki KAWADA ,  Naoki MATSUMOTO ,  Takahiro SENDA ,  Koji KOYAMA ,  Shohei FUKANO ,  Jun YOSHIKAWA ,  Hiroyuki KONDO ,  Takashi MINAKAWA

IPC: H01J37/32

Abstract: An antenna according to an aspect includes: a dielectric window having a first surface and a second surface, the second surface having an annular recessed surface and a flat surface surrounded by the recessed surface; a slot plate; a dielectric plate; a heat transfer member made of metal and having an upper surface and a lower surface opposing each other; a cooling jacket; and a heater, in which the upper surface includes a plurality of first regions and a second region, the cooling jacket is mounted on the plurality of first regions, the second region is recessed further toward the lower surface side than the plurality of first regions, the heater is mounted on the second region, and each of the plurality of first regions is provided at a position at least partially overlapping with the flat surface when viewed in a direction parallel to a central axis.

公开(公告)号：US20180019103A1

公开(公告)日：2018-01-18

申请号：US15646290

申请日：2017-07-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YOSHIKAWA ,  Naoki MATSUMOTO ,  Kazushi KANEKO

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32266 ,  H01J37/244 ,  H01J37/32201 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32238 ,  H01J37/32256 ,  H01J37/32311 ,  H01J37/32935

Abstract: A microwave control method is used in a microwave plasma processing apparatus including a microwave generation unit, a waveguide for guiding a microwave generated by the microwave generation unit, a tuner for controlling a position of a movable short-circuiting plate, and a stub provided between the tuner and an antenna in the waveguide and insertable into an inner space of the waveguide. The method incudes detecting the position of the movable short-circuiting plate controlled by the tuner for the microwave outputted by the microwave generation unit, determining whether or not a difference between a reference position and the detected position of the movable short-circuiting plate is within a tolerable range, and controlling an insertion length of the stub into the inner space of the waveguide when it is determined that the difference between the position of the movable short-circuiting plate and the reference position is not within the tolerable range.

公开(公告)号：US20150013913A1

公开(公告)日：2015-01-15

申请号：US14326652

申请日：2014-07-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihiko IWAO ,  Jun YOSHIKAWA

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/3222 ,  H01J37/32238

Abstract: A microwave plasma processing apparatus including a processing space; a dielectric window having a facing surface facing the processing space; and an antenna plate installed on a surface of the dielectric window opposite to the facing surface, and formed with a plurality of slots configured to radiate microwaves for plasma excitation to the processing space through the dielectric window. The plurality of slots includes a first slot group configured to transmit microwaves guided to a center side of the dielectric window, and a second slot group configured to transmit microwaves guided to a peripheral edge side of the dielectric window. The dielectric window includes a first concave portion in a region corresponding to the first slot group of the antenna plate on the facing surface, and a second concave portion in a region corresponding to the second slot group of the antenna plate on the facing surface.

Abstract translation: 一种微波等离子体处理装置，包括处理空间; 电介质窗，其具有面向所述处理空间的面对表面; 以及天线板，其安装在与所述相对表面相对的所述电介质窗口的表面上，并且形成有多个狭槽，所述多个狭槽被构造成通过所述电介质窗口将等离子体激发的微波辐射到所述处理空间。 多个槽包括被配置为传送被引导到电介质窗口的中心侧的微波的第一时隙组，以及被配置为传送被引导到电介质窗的外围边缘侧的微波的第二时隙组。 电介质窗包括与面对面上的天线板的第一槽组对应的区域中的第一凹部和与面对面上的天线板的第二槽组对应的区域的第二凹部。

公开(公告)号：US20140124478A1

公开(公告)日：2014-05-08

申请号：US14071717

申请日：2013-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YOSHIKAWA ,  Yoshio SUSA ,  Naoki MATSUMOTO ,  Peter L. G. VENTZEK

IPC: H01J1/50

CPC classification number: H01J37/3266 ,  H01J37/32669 ,  H01J37/32678

Abstract: The present disclosure provides a plasma processing apparatus, including: a processing chamber; an oscillator configured to output high-frequency power; a power supply unit configured to supply the high-frequency power from a specific plasma generating location into the processing chamber; a magnetic field forming unit provided outside the processing chamber and configured to forming a magnetic field at least at the specific plasma generating location; and a control unit configured to control the magnetic field formed by the magnetic field forming unit such that a relationship between an electron collision frequency fe of plasma generated in the processing chamber and a cyclotron frequency fc is fc>fe.

Abstract translation: 本公开提供了一种等离子体处理装置，包括：处理室; 配置为输出高频电力的振荡器; 电源单元，被配置为将来自特定等离子体产生位置的高频电力提供给所述处理室; 磁场形成单元，其设置在所述处理室的外部，并且被配置为至少在所述特定等离子体产生位置处形成磁场; 以及控制单元，被配置为控制由所述磁场形成单元形成的磁场，使得在所述处理室中产生的等离子体的电子碰撞频率fe与回旋加速器频率fc之间的关系为fc> fe。