公开(公告)号：DE112009001885T5

公开(公告)日：2011-05-19

申请号：DE112009001885

申请日：2009-08-04

Applicant: ULVAC INC

Inventor： IIJIMA EIICHI ,  IKEDA HIROTO ,  HAKOMORI MUNETO

IPC: C23C14/24 ,  H01L21/677

公开(公告)号：EP2540859A4

公开(公告)日：2014-06-18

申请号：EP11744413

申请日：2011-02-16

Applicant: ULVAC INC

Inventor： IIJIMA EIICHI ,  IKEDA HIROTO ,  ISO YOSHIKI

IPC: C23C14/30 ,  H01J37/06 ,  H01J37/065 ,  H01J37/10 ,  H01J37/147 ,  H01J37/304 ,  H01J37/305

CPC classification number: H01J37/305 ,  C23C14/30 ,  H01J37/21 ,  H01J2237/216 ,  H01J2237/3132

Abstract: [Object] To provide a vacuum processing apparatus capable of suppressing the diffusion of an electron beam even in a high vacuum region, preventing an evaporation rate from being reduced, and performing stable film formation. [Solving Means] A vacuum processing apparatus (vapor deposition apparatus) (1) includes a vacuum vapor deposition chamber (50), an electron gun (20), and an electron beam focusing mechanism (150). The vacuum vapor deposition chamber (50) is provided with an evaporation source that houses an evaporation material (31), and a member to be processed (10) obtained by heating the evaporation material (31) to be vapor-deposited as a vapor-deposited film. The electron gun is arranged adjacently to the vacuum vapor deposition chamber (50) and emits an electron beam to heat the evaporation material (31). The electron beam focusing mechanism (150) is provided within the vacuum vapor deposition chamber (50) and focuses the electron beam emitted from the electron gun 20.