公开(公告)号：JP2001044160A

公开(公告)日：2001-02-16

申请号：JP19966899

申请日：1999-07-13

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN TOIKU ,  RYU SHIKEN ,  SHO KENTATSU ,  YO KENRIN

IPC: B08B3/12 ,  B08B7/00 ,  G03F7/42 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To provide a method for cleaning the surface of a low dielectric constant material. SOLUTION: A substantially large part of a photoresist layer on a low dielectric constant organic material layer 102 is removed by a plasma108 containing nitrogen atoms, and thereafter an oxynitride silicon layer is formed on an exposed surface of the organic material layer. A resilient photoresist layer 106a of a plasma process is made to swell in a solvent 112. Then an oxygen plasma 114 is used to remove the swelled resilient photoresist layer. When the laminate is cleaned with the oxygen plasma, an oxynitride thin film 110 is formed on the organic material layer. Through the protection of the oxygennitride silicon layer, distortion of a cross-sectional shape of the organic material layer is prevented.