公开(公告)号：JP2001044160A

公开(公告)日：2001-02-16

申请号：JP19966899

申请日：1999-07-13

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN TOIKU ,  RYU SHIKEN ,  SHO KENTATSU ,  YO KENRIN

IPC: B08B3/12 ,  B08B7/00 ,  G03F7/42 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To provide a method for cleaning the surface of a low dielectric constant material. SOLUTION: A substantially large part of a photoresist layer on a low dielectric constant organic material layer 102 is removed by a plasma108 containing nitrogen atoms, and thereafter an oxynitride silicon layer is formed on an exposed surface of the organic material layer. A resilient photoresist layer 106a of a plasma process is made to swell in a solvent 112. Then an oxygen plasma 114 is used to remove the swelled resilient photoresist layer. When the laminate is cleaned with the oxygen plasma, an oxynitride thin film 110 is formed on the organic material layer. Through the protection of the oxygennitride silicon layer, distortion of a cross-sectional shape of the organic material layer is prevented.

公开(公告)号：JP2001053062A

公开(公告)日：2001-02-23

申请号：JP22521599

申请日：1999-08-09

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SAI MEIKAN ,  YO KENRIN

IPC: H01L21/302 ,  C23C16/50 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311

Abstract: PROBLEM TO BE SOLVED: To effectively reduce the critical dimension of a semiconductor element by stepwise coating a polymer layer with openings and wires, increasing the ratio of height and width on one wire and one opening with the polymer layer and reducing the critical dimension of photoresist. SOLUTION: A polymer layer 26 is formed on photoresist 21 by a plasma reactor. The material of the polymer layer 26 is selected by carbon fluoride, hydrocarbon fluoride and carbide. A deposition process and an etching process are simultaneously advanced in the same environment in the plasma reactor. The polymer layer 26 is filled in one structure 25 with stepwise coating ability and it does not coat the base part of one structure 25. Thus, the ratio of height to width in one structure 25 can reduce the critical dimension of photoresist 21 from W6 to W7 by the polymer layer 26 coating photoresist 21 by the increase of the polymer layer 26.

公开(公告)号：JP2001053145A

公开(公告)日：2001-02-23

申请号：JP22203499

申请日：1999-08-05

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SAI MEIKAN ,  YO KENRIN

IPC: H01L21/768 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/336 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To simultaneously form narrow and wide trenches of the same depth by canceling out an etching rate difference caused by etching microload effect by the difference in thickness between a coating layer on the bottom of a narrow contact hole pattern and a coating layer on the bottom of a wide trench pattern. SOLUTION: A coating layer 27 on the bottom of a narrow contact hole pattern 25 is thinner than a coating layer 27 on the bottom of a wide trench pattern 26. An etching rate difference caused by etching mask micro effect between the narrow contact hole pattern 25 and the wide trench pattern 26 is canceled out, by the difference of thickness between the coating layer 27 on the bottom of the narrow contact hole pattern 25 and the coating layer 27 on the bottom of the wide trench pattern 26. As a result, the depths of the narrow contact hole and the wide trench becomes equal, and the number of required apparatus is decreased while improving the throughput.