公开(公告)号：JP2000058637A

公开(公告)日：2000-02-25

申请号：JP29390398

申请日：1998-10-15

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHIN SHINRAI ,  SO CHIN ,  RO KATETSU

IPC: H01L21/76 ,  H01L21/3205 ,  H01L21/762

Abstract: PROBLEM TO BE SOLVED: To prevent a dishing phenomenon, etc., and to ensure the uniformity of the whole semiconductor substrate by a method wherein an insulating layer is polished preparatorily, the whole substrate is flattened efficiently, and mainly polished by an etch-back process for exposing a masking layer and a shallow trench insulating structure section is formed. SOLUTION: A masking layer 102 is made on the whole surface of the semiconductor substrate 100. The substrate 100 is etched, and shallow trenches 104 are formed. An insulating layer 106 is made on the whole surface of the substrate 100, and the trenches 104 are also filled with the insulating layer. A part of the insulating film 106 covering the masking layer 102 is polished preparatorily, and polished in an extent that the masking layer 102 is not exposed, and an insulating layer 106a is formed. The masking layer 102 is used as an etching stop layer, the insulating film 106a is removed by etching, the masking layer 102 is exposed, the insulating layers are left in the trenches 104, and the insulating layers are used as insulating layers 106b, the surfaces of the insulating layers 106b are flattened, and the insulating layers 106b are formed in shallow trench insulating structure sections.