公开(公告)号：JP2000036541A

公开(公告)日：2000-02-02

申请号：JP28135498

申请日：1998-10-02

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SHA CHOKEI ,  WOO SHUNGEN ,  RO KATETSU

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To prevent a deviation or the like of a pattern in a photolithography or the like by vapor-depositing an intermetallic dielectric layer, patterning a via hole, then forming a titanium layer on the dielectric layer to connect a first aluminum layer formed in the hole, and forming a second aluminum layer on the titanium layer. SOLUTION: A first metal layer 202 is formed on a substrate 200, and then an intermetallic dielectric layer 204 is vapor deposited on the substrate 200 via a CVD. Then, the layer 204 is etched by using a photoresist pattern until a surface of the layer 202 is exposed to form a via hole 208. a second aluminum layer 211 is vapor deposited in the hole 208, and an aluminum via hole 213 is formed. Thereafter, a titanium layer 214 is formed on the layer 204 and the hole 213 by a physical vapor deposition method. A second aluminum layer 216 is formed on the layer 214 by using a physical vapor deposition method.