公开(公告)号：JP2000036541A

公开(公告)日：2000-02-02

申请号：JP28135498

申请日：1998-10-02

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SHA CHOKEI ,  WOO SHUNGEN ,  RO KATETSU

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To prevent a deviation or the like of a pattern in a photolithography or the like by vapor-depositing an intermetallic dielectric layer, patterning a via hole, then forming a titanium layer on the dielectric layer to connect a first aluminum layer formed in the hole, and forming a second aluminum layer on the titanium layer. SOLUTION: A first metal layer 202 is formed on a substrate 200, and then an intermetallic dielectric layer 204 is vapor deposited on the substrate 200 via a CVD. Then, the layer 204 is etched by using a photoresist pattern until a surface of the layer 202 is exposed to form a via hole 208. a second aluminum layer 211 is vapor deposited in the hole 208, and an aluminum via hole 213 is formed. Thereafter, a titanium layer 214 is formed on the layer 204 and the hole 213 by a physical vapor deposition method. A second aluminum layer 216 is formed on the layer 214 by using a physical vapor deposition method.

公开(公告)号：JP2000306862A

公开(公告)日：2000-11-02

申请号：JP11084699

申请日：1999-04-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SHA CHOKEI ,  O KONCHI ,  SHA BUNEKI

IPC: H01L21/768 ,  C23C14/50 ,  H01L21/203 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To provide a method for uniformly coating the sidewall of a contact hole of a silicon wafer in a stepwise manner. SOLUTION: In coating the side of wall of a contact hole by a PVD method, a rotary pedestal 32 capable of tilting at a certain angle is used, a silicon wafer 30 having a plurality of contact holes therein is placed on the pedestal in a reaction chamber, a metal layer is deposited on the bottom surfaces of the contact holes with the pedestal disposed perpendicular to the depositing direction, the position of the pedestal is adjusted so that a normal of the pedestal forms a tilt angle with respect to the depositing direction, and finally the pedestal 32 is rotated to attain uniform deposition onto inner sidewalls of the contact holes of the silicon wafer.