公开(公告)号：FR2772986B1

公开(公告)日：2000-02-11

申请号：FR9716332

申请日：1997-12-23

Applicant: UNITED MICROELECTRONICS CORP

Inventor： YANG MING SHENG ,  WU JUAN YUAN ,  LUR WATER ,  SUN SHIH WEI

IPC: H01L21/304 ,  C09K3/14 ,  H01L21/321 ,  H01L21/302 ,  H01L21/461

Abstract: A method for chemical mechanical polishing a component includes providing an oxide layer and forming at least one via through the oxide layer. A tungsten layer is formed within the via and over the oxide layer. A first chemical mechanical polishing step is carried out on a polishing pad using a first slurry having an oxidizing component and having a pH of approximately 2 to approximately 4 to remove the tungsten layer from over the oxide layer. A second chemical mechanical polishing step is carried out on the polishing pad using a second slurry having a pH of approximately 2 to approximately 4 to polish scratches out of the oxide layer.

公开(公告)号：FR2772986A1

公开(公告)日：1999-06-25

申请号：FR9716332

申请日：1997-12-23

Applicant: UNITED MICROELECTRONICS CORP

Inventor： YANG MING SHENG ,  WU JUAN YUAN ,  LUR WATER ,  SUN SHIH WEI

IPC: H01L21/304 ,  C09K3/14 ,  H01L21/321 ,  H01L21/302 ,  H01L21/461

Abstract: Chemical mechanical polishing, of a semiconductor wafer with a tungsten layer (38) on a dielectric layer (32), uses a single polishing pad (44) and a first slurry mixture (42) containing an oxidising agent to polish the tungsten and expose the dielectric layer. A second slurry mixture containing an oxide etchant is then used to polish the dielectric. Both slurry mixtures have a pH of 2-4. The first slurry includes water, Fe(NO3)3, Al2O3, H2O2, and may also contain KIO3.