公开(公告)号：JP2002110780A

公开(公告)日：2002-04-12

申请号：JP2000286177

申请日：2000-09-20

Applicant: UNITED MICROELECTRONICS CORP

Inventor： YU SUIYO ,  RO KATETSU ,  YO KOKUJI

IPC: H01L21/76

Abstract: PROBLEM TO BE SOLVED: To provide the manufacturing method of STI which hardly produces defects in silicon substrates. SOLUTION: An oxidation pad layer 102 and a mask layer 104 are formed on the silicon substrate 100, a mask 104a is formed on the mask layer in the pattern of a photoresist formed thereon, and an oxidation pad layer 102a and the substrate 100 are etched, to form a trench. A first isolation layer 112 is formed on the substrate, after an oxidation liner layer 110 has been formed in the trench to partially embed the trench. Since annealing is carried out in this stage and turning into minute structure first isolation film 112 is carried out, stresses due to the difference of a thermal expansion coefficient is opened via a trench opening part. After the trench has been completely embedded by a second isolation layer 116, planarization is carried out, to complete STI.

公开(公告)号：JP2000323561A

公开(公告)日：2000-11-24

申请号：JP12757299

申请日：1999-05-07

Applicant: UNITED MICROELECTRONICS CORP

Inventor： YO KOKUJI ,  YEW TRI-RUNG ,  CHIN SHINRAI ,  RO KATETSU

IPC: H01L21/76

Abstract: PROBLEM TO BE SOLVED: To reduce stresses caused by an annealing process by forming a doped silicon dioxide layer on a silicon nitride layer to fill a trench, effecting the annealing process, and removing part of the doped silicon dioxide layer by a planarization step to expose the silicon nitride layer. SOLUTION: A doped silicon dioxide layer 110 is formed on a silicon nitride layer 104 to fill a trench 106. The layer 110 is subjected to an annealing process to be highly densified. The annealing process is performed at about 800-950 deg.C. Part of the layer 110 is removed by, e.g. chemical-mechanical polishing to expose the layer 104. The coefficient of thermal expansion and Young's modulus of the layer 110 are adjusted by adjusting the doping level. This reduces stresses caused during the annealing process, and hence reduces both leaks at contacts and at thresholds or below.