A STRETCHABLE FORM OF SINGLE CRYSTAL SILICON FOR HIGH PERFORMANCE ELECTRONICS ON RUBBER SUBSTRATES
    1.
    发明公开
    A STRETCHABLE FORM OF SINGLE CRYSTAL SILICON FOR HIGH PERFORMANCE ELECTRONICS ON RUBBER SUBSTRATES 审中-公开
    一种用于橡胶基板上高性能电子的单晶硅的可弯曲形式

    公开(公告)号:KR20070100617A

    公开(公告)日:2007-10-11

    申请号:KR20060053675

    申请日:2006-06-14

    Applicant: UNIV ILLINOIS

    Abstract: A stretchable form of single crystal silicon for high performance electronics on rubber substrates is provided to enable various deformations such as stretching, crimping, and bending. A stretchable form of single crystal silicon for high performance electronics on rubber substrates includes a flexible substrate(705), and a bent semiconductor structure(715). The flexible substrate(705) is formed of a polymer and/or elastic material substrate having a support surface(710). The bent semiconductor structure(715) has a curved inner surface(720). At least a portion of the curved inner surface(720) of the bent semiconductor structure(715) is adhered to the support surface of the flexible substrate(705). The curved inner surface(705) can be adhered to the support surface(710) at the entire points along the inner surface(720).

    Abstract translation: 提供了用于橡胶基板上的高性能电子器件的可拉伸形式的单晶硅,以实现诸如拉伸,卷曲和弯曲之类的各种变形。 用于橡胶基板上的高性能电子器件的可拉伸形式的单晶硅包括柔性基板(705)和弯曲半导体结构(715)。 柔性基底(705)由具有支撑表面(710)的聚合物和/或弹性材料基底形成。 弯曲的半导体结构(715)具有弯曲的内表面(720)。 弯曲半导体结构(715)的弯曲内表面(720)的至少一部分粘附到柔性基板(705)的支撑表面。 弯曲的内表面(705)可以沿着内表面(720)的整个点粘附到支撑表面(710)。

    PRINTABLE SEMICONDUCTOR STRUCTURES AND RELATED METHODS OF MAKING AND ASSEMBLING

    公开(公告)号:MY151572A

    公开(公告)日:2014-06-13

    申请号:MYPI20062537

    申请日:2006-06-01

    Applicant: UNIV ILLINOIS

    Abstract: THE PRESENT INVENTION PROVIDES A HIGH YIELD PATHWAY FOR THE FABRICATION, TRANSFER AND ASSEMBLY OF HIGH QUALITY PRINTABLE SEMICONDUCTOR ELEMENTS HAVING SELECTED PHYSICAL DIMENSIONS, SHAPES, COMPOSITIONS AND SPATIAL ORIENTATIONS. THE COMPOSITIONS AND METHODS OF THE PRESENT INVENTION PROVIDE HIGH PRECISION REGISTERED TRANSFER AND INTEGRATION OF ARRAYS OF MICROSIZED AND/OR NANOSIZED SEMICONDUCTOR STRUCTURES ONTO SUBSTRATES, INCLUDING LARGE AREA SUBSTRATES AND/OR FLEXIBLE SUBSTRATES. IN ADDITION, THE PRESENT INVENTION PROVIDES METHODS OF MAKING PRINTABLE SEMICONDUCTOR ELEMENTS (300) FROM LOW COST BULK MATERIALS, SUCH AS BULK SILICON WAFERS (100), AND SMART-MATERIALS PROCESSING STRATEGIES THAT ENABLE A VERSATILE AND COMMERCIALLY ATTRACTIVE PRINTING-BASED FABRICATION PLATFORM FOR MAKING A BROAD RANGE OF FUNCTIONAL SEMICONDUCTOR DEVICES.

    PRINTABLE SEMICONDUCTOR STRUCTURES AND RELATED METHODS OF MAKING AND ASSEMBLING

    公开(公告)号:MY152238A

    公开(公告)日:2014-09-15

    申请号:MYPI20113695

    申请日:2006-06-01

    Applicant: UNIV ILLINOIS

    Abstract: THE PRESENT INVENTION PROVIDES A HIGH YIELD PATHWAY FOR THE FABRICATION, TRANSFER AND ASSEMBLY OF HIGH QUALITY PRINTABLE SEMICONDUCTOR ELEMENTS (300) HAVING SELECTED PHYSICAL DIMENSIONS, SHAPES, COMPOSITIONS AND SPATIAL ORIENTATIONS. THE COMPOSITIONS AND METHODS OF THE PRESENT INVENTION PROVIDE HIGH PRECISION REGISTERED TRANSFER AND INTEGRATION OF ARRAYS OF MICROSIZED AND/OR NANOSIZED SEMICONDUCTOR STRUCTURES (290) ONTO SUBSTRATES, INCLUDING LARGE AREA SUBSTRATES AND/OR FLEXIBLE SUBSTRATES. IN ADDITION, THE PRESENT INVENTION PROVIDES METHODS OF MAKING PRINTABLE SEMICONDUCTOR ELEMENTS (300) FROM LOW COST BULK MATERIALS, SUCH AS BULK SILICON WAFERS (320), AND SMART MATERIALS PROCESSING STRATEGIES THAT ENABLE A VERSATILE AND COMMERCIALLY ATTRACTIVE PRINTING-BASED FABRICATION PLATFORM FOR MAKING A BROAD RANGE OF FUNCTIONAL SEMICONDUCTOR DEVICES.

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