公开(公告)号：US20240192573A1

公开(公告)日：2024-06-13

申请号：US18554597

申请日：2022-03-15

Applicant: Universiteit Twente

Inventor： Johan Willem Berenschot ,  Sonia Maria Garcia Blanco ,  Simen Mikalsen Martinussen ,  Niels Roelof Tas ,  Roald Michel Tiggelaar

IPC: G02F1/35 ,  G02F1/365

CPC classification number: G02F1/3511 ,  G02F1/3536 ,  G02F1/365 ,  G02F2203/56

Abstract: The present invention relates to a light source for generating an optical frequency comb. The present invention further relates to a method for manufacturing the optical resonator used in this light source. The present invention additionally relates to microelectromechanical systems, MEMS, optical switch and system comprising the same. The present invention also relates to a sensor and to a method for manufacturing a suspended silicon nitride structure comprised in the sensor. According to the present invention, a single-step LPCVD deposited monolithic stoichiometric Si3N4 layer is used on a mono-crystalline aluminum oxide substrate such as sapphire. The thickness of the Si3N4 layer exceeds 500 nm. This layer can be realized with relatively low residual stress.

公开(公告)号：US20230250383A1

公开(公告)日：2023-08-10

申请号：US18003195

申请日：2021-06-30

Applicant: Universiteit Twente ,  Ente Ospedaliero Specializzato in Gastroenterologia "Saverio De Bellis" - IRCCS

Inventor： Arturo Susarrey Arce ,  Silke Inge Krol ,  Johan Willem Berenschot ,  Niels Roelof Tas

IPC: C12M1/12 ,  C12N5/00 ,  C12M3/00

CPC classification number: C12M25/14 ,  C12N5/0062 ,  C12N5/0068 ,  C12M21/08 ,  C12N2513/00

Abstract: The disclosure relates to a method for producing three-dimensional cell cluster on an inorganic cell culture platform comprising three-dimensional structures, preferably fractal structures. Such three-dimensional structures are useful for culturing cells and tissues, preferably in three dimensions. Such three-dimensional structures are useful for inducing differentiation, preferably of non-embryonic stem cells. In particular, such three-dimensional (3D) structures are useful for culturing primary tissue cells.

公开(公告)号：US10144633B2

公开(公告)日：2018-12-04

申请号：US15443898

申请日：2017-02-27

Applicant: UNIVERSITEIT TWENTE

Inventor： Johan Willem Berenschot ,  Niels Roelof Tas

IPC: B81B1/00 ,  B81C1/00

Abstract: A method of manufacturing a plurality of through-holes (132) in a layer of material by subjecting the layer to directional dry etching to provide through-holes (132) in the layer of material; For batch-wise production, the method comprises after a step of providing a layer of first material (220) on base material and before the step of directional dry etching, providing a plurality of holes at the central locations of pits (210), etching base material at the central locations of the pits (210) so as to form a cavity (280) with an aperture (281), depositing a second layer of material (240) on the base material in the cavity (280), and subjecting the second layer of material (240) in the cavity (280) to said step of directional dry etching using the aperture (281) as the opening (141) of a shadow mask.

公开(公告)号：US20170247243A1

公开(公告)日：2017-08-31

申请号：US15443898

申请日：2017-02-27

Applicant: UNIVERSITEIT TWENTE

Inventor： Johan Willem Berenschot ,  Niels Roelof Tas

IPC: B81B1/00 ,  B81C1/00

CPC classification number: B81B1/004 ,  B81B2201/057 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/0361 ,  B81B2203/0369 ,  B81C1/00087 ,  B81C1/00111 ,  B81C2201/0132

Abstract: A method of manufacturing a plurality of through-holes (132) in a layer of material by subjecting the layer to directional dry etching to provide through-holes (132) in the layer of material; For batch-wise production, the method comprises after a step of providing a layer of first material (220) on base material and before the step of directional dry etching, providing a plurality of holes at the central locations of pits (210), etching base material at the central locations of the pits (210) so as to form a cavity (280) with an aperture (281), depositing a second layer of material (240) on the base material in the cavity (280), and subjecting the second layer of material (240) in the cavity (280) to said step of directional dry etching using the aperture (281) as the opening (141) of a shadow mask.

公开(公告)号：US09416001B2

公开(公告)日：2016-08-16

申请号：US14570652

申请日：2014-12-15

Applicant: Universiteit Twente

Inventor： Johan Willem Berenschot ,  Niels Roelof Tas

IPC: B81C1/00 ,  C03C25/68 ,  B82Y35/00 ,  G01Q70/10 ,  G01Q70/16 ,  B33Y10/00 ,  B33Y80/00

CPC classification number: B81C1/00111 ,  B33Y10/00 ,  B33Y80/00 ,  B81C2201/034 ,  B82Y35/00 ,  G01Q70/10 ,  G01Q70/16 ,  Y10T428/2913 ,  Y10T428/2982

Abstract: The invention relates to a method for making a 3D nanostructure having a nanosubstructure, comprising the steps of: i) providing a mold comprising at least one sharp concave corner; ii) conformational depositing at least one structural material in the sharp concave corner; iii) isotropically removing structural material; iv) depositing at least one other structural material; v) removing earlier deposited structural material; vi) forming a nanosubstructure; and vii) removing the mold thereby providing the 3D nanostructure having the nanosubstructure.

公开(公告)号：US20150158724A1

公开(公告)日：2015-06-11

申请号：US14570652

申请日：2014-12-15

Applicant: Universiteit Twente

Inventor： Johan Willem Berenschot ,  Niels Roelof Tas

IPC: B81C1/00 ,  G01Q70/16

CPC classification number: B81C1/00111 ,  B33Y10/00 ,  B33Y80/00 ,  B81C2201/034 ,  B82Y35/00 ,  G01Q70/10 ,  G01Q70/16 ,  Y10T428/2913 ,  Y10T428/2982

Abstract: The invention relates to a method for making a 3D nanostructure having a nanosubstructure, comprising the steps of: i) providing a mold comprising at least one sharp concave corner; ii) conformational depositing at least one structural material in the sharp concave corner; iii) isotropically removing structural material; iv) depositing at least one other structural material; v) removing earlier deposited structural material; vi) forming a nanosubstructure; and vii) removing the mold thereby providing the 3D nanostructure having the nanosubstructure.

Abstract translation: 本发明涉及一种制备具有纳米级结构的3D纳米结构的方法，包括以下步骤：i）提供包括至少一个锐角凹入角的模具; ii）在锋利的凹角中构造沉积至少一种结构材料; iii）各向同性地除去结构材料; iv）沉积至少一种其他结构材料; v）清除较早沉积的结构材料; vi）形成纳米结构; 和vii）去除模具，从而提供具有纳米结构的3D纳米结构。