公开(公告)号：US20160268206A1

公开(公告)日：2016-09-15

申请号：US14644197

申请日：2015-03-10

Applicant: Unimicron Technology Corp.

Inventor： Dyi-Chung Hu ,  Yin-Po Hung ,  Ra-Min Tain ,  Yu-Hua Chen

IPC: H01L23/538 ,  H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827

Abstract: An interconnection structure and a manufacturing method thereof are provided. The interconnection structure includes a substrate, a conductive through via, a dielectric layer, and a conductive layer. The substrate has a first surface and a second surface opposite to each other. The conductive through via is disposed in the substrate and extended from the first surface beyond the second surface. The dielectric layer is disposed on the substrate, wherein the dielectric layer has an opening exposing a portion of the conductive through via. The top surface of the conductive through via protrudes from the bottom surface of the opening. The conductive layer is disposed in the opening and connected to the conductive through via.

Abstract translation: 提供互连结构及其制造方法。 互连结构包括衬底，导电通孔，电介质层和导电层。 基板具有彼此相对的第一表面和第二表面。 导电通孔设置在基板中并从第一表面延伸超过第二表面。 介电层设置在基板上，其中电介质层具有露出导电通孔的一部分的开口。 导电通孔的顶表面从开口的底表面突出。 导电层设置在开口中并连接到导电通孔。

公开(公告)号：US10141224B2

公开(公告)日：2018-11-27

申请号：US15821666

申请日：2017-11-22

Applicant: Unimicron Technology Corp.

Inventor： Dyi-Chung Hu ,  Yin-Po Hung ,  Ra-Min Tain ,  Yu-Hua Chen

IPC: H01L21/768 ,  H01L23/498 ,  H01L21/48 ,  H01L23/48

Abstract: An interconnection structure and a manufacturing method thereof are provided. The method includes the following steps. First, a substrate having a first surface and a second surface opposite to each other is provided. Then, a conductive through via extended from the first surface to the second surface is formed in the substrate. Then, a portion of the substrate is removed from the first surface to expose a portion of the conductive through via. Then, a dielectric layer is formed on the substrate, and the dielectric layer covers the exposed conductive through via. Then, an opening is formed in the dielectric layer, wherein the opening exposes a portion of the conductive through via, and the top surface of the conductive through via protrudes from the bottom surface of the opening. Then, a conductive layer is formed in the opening.

公开(公告)号：US20180096889A1

公开(公告)日：2018-04-05

申请号：US15821666

申请日：2017-11-22

Applicant: Unimicron Technology Corp.

Inventor： Dyi-Chung Hu ,  Yin-Po Hung ,  Ra-Min Tain ,  Yu-Hua Chen

IPC: H01L21/768 ,  H01L23/498 ,  H01L21/48 ,  H01L23/48

CPC classification number: H01L21/76879 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827

Abstract: An interconnection structure and a manufacturing method thereof are provided. The method includes the following steps. First, a substrate having a first surface and a second surface opposite to each other is provided. Then, a conductive through via extended from the first surface to the second surface is formed in the substrate. Then, a portion of the substrate is removed from the first surface to expose a portion of the conductive through via. Then, a dielectric layer is formed on the substrate, and the dielectric layer covers the exposed conductive through via. Then, an opening is formed in the dielectric layer, wherein the opening exposes a portion of the conductive through via, and the top surface of the conductive through via protrudes from the bottom surface of the opening. Then, a conductive layer is formed in the opening.

公开(公告)号：US09859159B2

公开(公告)日：2018-01-02

申请号：US14644197

申请日：2015-03-10

Applicant: Unimicron Technology Corp.

Inventor： Dyi-Chung Hu ,  Yin-Po Hung ,  Ra-Min Tain ,  Yu-Hua Chen

IPC: H01L23/538 ,  H01L21/768 ,  H01L23/498 ,  H01L21/48 ,  H01L23/48

CPC classification number: H01L21/76879 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827

Abstract: An interconnection structure and a manufacturing method thereof are provided. The interconnection structure includes a substrate, a conductive through via, a dielectric layer, and a conductive layer. The substrate has a first surface and a second surface opposite to each other. The conductive through via is disposed in the substrate and extended from the first surface beyond the second surface. The dielectric layer is disposed on the substrate, wherein the dielectric layer has an opening exposing a portion of the conductive through via. The top surface of the conductive through via protrudes from the bottom surface of the opening. The conductive layer is disposed in the opening and connected to the conductive through via.