公开(公告)号：US20160293389A1

公开(公告)日：2016-10-06

申请号：US15088834

申请日：2016-04-01

Applicant: Tokyo Electron Limited ,  University of Houston System

Inventor： Lee Chen ,  Demetre J. Economou ,  Jianping Zhao ,  Merritt Funk

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/3222 ,  H01J37/32293

Abstract: A method and apparatus is provided for obtaining a low average electron energy flux onto a substrate in a processing chamber. A processing chamber includes a substrate support therein for chemical processing. An energy source induced plasma, and ion propelling means, directs energetic plasma electrons toward the substrate support. A dipole ring magnet field is applied perpendicular to the direction of ion travel, to effectively prevent electrons above an acceptable maximum energy level from reaching the substrate holder. Rotation of the dipole magnetic field reduces electron non-uniformities.

Abstract translation: 提供了一种用于获得在处理室中的基板上的低平均电子能量通量的方法和装置。 处理室包括用于化学处理的基板支撑件。 能量源诱导的等离子体和离子推进装置将能量等离子体电子引导到衬底支撑。 垂直于离子行进方向施加偶极环磁场，以有效地防止高于可接受的最大能级的电子到达衬底保持器。 偶极磁场的旋转减小电子不均匀性。

公开(公告)号：US10207469B2

公开(公告)日：2019-02-19

申请号：US15534312

申请日：2015-12-08

Applicant: University of Houston System

Inventor： Vincent M. Donnelly ,  Demetre J. Economou ,  Siyuan Tian

IPC: B82Y30/00 ,  B29D11/00 ,  G03F1/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027

Abstract: Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.

公开(公告)号：US20180226227A1

公开(公告)日：2018-08-09

申请号：US15949274

申请日：2018-04-10

Applicant: University of Houston System

Inventor： Vincent M. Donnelly ,  Demetre J. Economou

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32174 ,  H01J37/32036 ,  H01J37/32045 ,  H01J37/32082 ,  H01J37/32146 ,  H01L21/30655

Abstract: A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.

公开(公告)号：US10515782B2

公开(公告)日：2019-12-24

申请号：US15949274

申请日：2018-04-10

Applicant: University of Houston System

Inventor： Vincent M. Donnelly ,  Demetre J. Economou

IPC: H01L21/306 ,  H01J37/32 ,  H01L21/3065

Abstract: A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.

公开(公告)号：US09852893B2

公开(公告)日：2017-12-26

申请号：US15088834

申请日：2016-04-01

Applicant: Tokyo Electron Limited ,  University of Houston System

Inventor： Lee Chen ,  Demetre J. Economou ,  Jianping Zhao ,  Merritt Funk

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/3222 ,  H01J37/32293

Abstract: A method and apparatus is provided for obtaining a low average electron energy flux onto a substrate in a processing chamber. A processing chamber includes a substrate support therein for chemical processing. An energy source induced plasma, and ion propelling means, directs energetic plasma electrons toward the substrate support. A dipole ring magnet field is applied perpendicular to the direction of ion travel, to effectively prevent electrons above an acceptable maximum energy level from reaching the substrate holder. Rotation of the dipole magnetic field reduces electron non-uniformities.

公开(公告)号：US20170361551A1

公开(公告)日：2017-12-21

申请号：US15534312

申请日：2015-12-08

Applicant: University of Houston System

Inventor： Vincent M. Donnelly ,  Demetre J. Economou ,  Siyuan Tian

IPC: B29D11/00 ,  B82Y30/00 ,  H01J37/317 ,  H01L21/027 ,  G03F1/20 ,  H01J37/302

CPC classification number: B29D11/00375 ,  B29D11/00 ,  B29D11/00365 ,  B82Y30/00 ,  G03F1/20 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/21 ,  H01J2237/2811 ,  H01J2237/2817 ,  H01J2237/31776 ,  H01L21/0274

Abstract: Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.