公开(公告)号：US10207469B2

公开(公告)日：2019-02-19

申请号：US15534312

申请日：2015-12-08

Applicant: University of Houston System

Inventor： Vincent M. Donnelly ,  Demetre J. Economou ,  Siyuan Tian

IPC: B82Y30/00 ,  B29D11/00 ,  G03F1/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027

Abstract: Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.

公开(公告)号：US20180226227A1

公开(公告)日：2018-08-09

申请号：US15949274

申请日：2018-04-10

Applicant: University of Houston System

Inventor： Vincent M. Donnelly ,  Demetre J. Economou

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32174 ,  H01J37/32036 ,  H01J37/32045 ,  H01J37/32082 ,  H01J37/32146 ,  H01L21/30655

Abstract: A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.

公开(公告)号：US10515782B2

公开(公告)日：2019-12-24

申请号：US15949274

申请日：2018-04-10

Applicant: University of Houston System

Inventor： Vincent M. Donnelly ,  Demetre J. Economou

IPC: H01L21/306 ,  H01J37/32 ,  H01L21/3065

Abstract: A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.

公开(公告)号：US20170361551A1

公开(公告)日：2017-12-21

申请号：US15534312

申请日：2015-12-08

Applicant: University of Houston System

Inventor： Vincent M. Donnelly ,  Demetre J. Economou ,  Siyuan Tian

IPC: B29D11/00 ,  B82Y30/00 ,  H01J37/317 ,  H01L21/027 ,  G03F1/20 ,  H01J37/302

CPC classification number: B29D11/00375 ,  B29D11/00 ,  B29D11/00365 ,  B82Y30/00 ,  G03F1/20 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/21 ,  H01J2237/2811 ,  H01J2237/2817 ,  H01J2237/31776 ,  H01L21/0274

Abstract: Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.