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公开(公告)号：CA1165469A
公开(公告)日：1984-04-10
申请号：CA383828
申请日：1981-08-13
Applicant: WESTINGHOUSE ELECTRIC CORP
Inventor： NATHANSON HARVEY C , KAO YU C , HOBGOOD HUDSON M , THOMAS RICHARD N
IPC: C30B13/06 , C30B33/02 , H01L21/306 , H01L29/91
Abstract: 16 49,113 This invention provides for mounting a singlecrystal doped boule of silicon in a float zone apparatus. A vacuum or other ambient is established within the apparatus and an rf coil is passed along the boule's length. The rf power is such that the boule is melted to depth "d" which is less than the diameter of the boule. Dopant within the molten depth "d", diffuses to the surface of the melt and evaporates, thereby leaving upon resolidification a relatively high resistivity single crystal sheath along the length of the boule. Wafers cut from the boule can be used for making semiconductor devices with a high resistivity edge portion, thereby providing a device with a high breakdown voltage without the need for field rings, beveling or coating.
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公开(公告)号：DE3134558A1
公开(公告)日：1982-06-16
申请号：DE3134558
申请日：1981-09-01
Applicant: WESTINGHOUSE ELECTRIC CORP
Inventor： NATHANSON HARVEY C , KAO YU C , HOBGOOD HUDSON M , THOMAS RICHARD N
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公开(公告)号：CA1237641A
公开(公告)日：1988-06-07
申请号：CA443597
申请日：1983-12-19
Applicant: WESTINGHOUSE ELECTRIC CORP
Inventor： THOMAS RICHARD N , HOBGOOD HUDSON M , SWARTZ JOHN C
Abstract: 14 A two-step process for fabricating impurity doped float-zoned single crystal silicon boules which exhibit substantially controlled and uniform concentrations of the impurity is disclosed. This process, when applied to polycrystalline silicon rods in a controlled environment of oxygen results in the production of high purity float-zoned silicon crystals with substantially uniform oxygen concentrations of up to 32 ppma which are not currently attainable utilizing the conventional Czochralski silicon boule fabrication methods of the semiconductor industry.
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