公开(公告)号：CA1237641A

公开(公告)日：1988-06-07

申请号：CA443597

申请日：1983-12-19

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： THOMAS RICHARD N ,  HOBGOOD HUDSON M ,  SWARTZ JOHN C

IPC: C30B13/12 ,  C30B13/10 ,  C30B29/06 ,  C30B13/00

Abstract: 14 A two-step process for fabricating impurity doped float-zoned single crystal silicon boules which exhibit substantially controlled and uniform concentrations of the impurity is disclosed. This process, when applied to polycrystalline silicon rods in a controlled environment of oxygen results in the production of high purity float-zoned silicon crystals with substantially uniform oxygen concentrations of up to 32 ppma which are not currently attainable utilizing the conventional Czochralski silicon boule fabrication methods of the semiconductor industry.