公开(公告)号：WO2014045042A1

公开(公告)日：2014-03-27

申请号：PCT/GB2013/052460

申请日：2013-09-19

Applicant: WOLFSON MICROELECTRONICS PLC

Inventor： HOEKSTRA, Tsjerk ,  HESKETH, Mark

IPC: H04R19/00

CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  H04R1/222 ,  H04R1/2892 ,  H04R7/20 ,  H04R19/04 ,  H04R31/003 ,  H04R2201/003 ,  H04R2207/021

Abstract: This application relates to MEMS devices, especially MEMS capacitive transducers and to processes for forming such MEMS transducer that provide increased robustness and resilience to acoustic shock. The application describes a MEMS transducer having a flexible membrane (101) supported relative to a first surface of a substrate (105) which has one or more cavities therein, e.g. to provide an acoustic volume. A stop structure (401, 402) is positioned so as to be contactable by the membrane when deflected so as to limit the amount of deflection of the membrane. The stop structure defines one or more openings to the one or more substrate cavities and comprises at least one narrow support element (401, 402) within or between said one or more openings. The stop structure thus limits the amount of membrane deflection, thus reducing the stress experienced at the edges and prevents the membrane from contacting a sharp edge of a substrate cavity. As the stop structure comprises narrow support elements any performance impact on the transducer is limited.

Abstract translation: 本申请涉及MEMS器件，特别是MEMS电容式换能器，以及用于形成这样的MEMS换能器的方法，其提供对声学冲击的增强的鲁棒性和弹性。 该应用描述了一种MEMS传感器，其具有相对于其中具有一个或多个空腔的衬底（105）的第一表面支撑的柔性膜（101）。 以提供声音体积。 定位结构（401,402）被定位成当偏转时能够被膜接触，以限制膜的偏转量。 止挡结构限定了一个或多个开口到一个或多个基底空腔，并且包括在所述一个或多个开口之内或之间的至少一个窄支撑元件（401,402）。 因此，止挡结构限制了膜偏转的量，从而减小了边缘处的应力，并且防止了膜接触衬底腔的尖锐边缘。 由于止动结构包括窄支撑元件，所以对换能器的任何性能影响都受到限制。