中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.03 seconds)

    DEGRADABLE NEUTRAL LAYERS FOR BLOCK COPOLYMER LITHOGRAPHY APPLICATIONS
    2.
    发明申请
    DEGRADABLE NEUTRAL LAYERS FOR BLOCK COPOLYMER LITHOGRAPHY APPLICATIONS 有权
    用于嵌段共聚物光刻应用的可降解中性层

    公开(公告)号：US20140263164A1

    公开(公告)日：2014-09-18

    申请号：US13831193

    申请日：2013-03-14

    Applicant: Wisconsin Alumni Research Foundation

    Inventor： Padma Gopalan ,  Daniel Patrick Sweat ,  Jonathan Woosun Choi ,  Myungwoong Kim

    IPC: C09D153/00

    CPC classification number: B32B27/30 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  C08F220/18 ,  C09D153/00

    Abstract: Polymer films comprising crosslinked random copolymers and methods for making the films are provided. Also provided are polymer films comprising random copolymers that are covalently linked to an underlying substrate. The polymer films can be incorporated into structures in which the films are employed as surface-modifying layers for domain-forming block copolymers and the structures can be used for pattern transfer applications via block copolymer lithography. The crosslinks between the random copolymer chains in the polymer films or the links between the random copolymer chains and the substrate surface are characterized in that they can be cleaved under relatively mild conditions.

    Abstract translation: 提供包含交联无规共聚物的聚合物薄膜和制备薄膜的方法。 还提供了包含共价连接到下面的基底的无规共聚物的聚合物膜。 聚合物膜可以结合到其中使用膜作为区域形成嵌段共聚物的表面改性层的结构中，并且该结构可以通过嵌段共聚物光刻用于图案转移应用。 聚合物膜中的无规共聚物链之间的交联或无规共聚物链与基材表面之间的连接的特征在于它们可以在相对温和的条件下裂解。

    Degradable neutral layers for block copolymer lithography applications
    8.
    发明授权
    Degradable neutral layers for block copolymer lithography applications 有权
    用于嵌段共聚物光刻应用的可降解中性层

    公开(公告)号：US08999623B2

    公开(公告)日：2015-04-07

    申请号：US13831193

    申请日：2013-03-14

    Applicant: Wisconsin Alumni Research Foundation

    Inventor： Padma Gopalan ,  Daniel Patrick Sweat ,  Jonathan Woosun Choi ,  Myungwoong Kim

    IPC: G03C1/00 ,  G03F7/00 ,  B32B27/30 ,  B82Y30/00 ,  C09D153/00

    CPC classification number: B32B27/30 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  C08F220/18 ,  C09D153/00

    Abstract: Polymer films comprising crosslinked random copolymers and methods for making the films are provided. Also provided are polymer films comprising random copolymers that are covalently linked to an underlying substrate. The polymer films can be incorporated into structures in which the films are employed as surface-modifying layers for domain-forming block copolymers and the structures can be used for pattern transfer applications via block copolymer lithography. The crosslinks between the random copolymer chains in the polymer films or the links between the random copolymer chains and the substrate surface are characterized in that they can be cleaved under relatively mild conditions.

    Abstract translation: 提供包含交联无规共聚物的聚合物薄膜和制备薄膜的方法。 还提供了包含共价连接到下面的基底的无规共聚物的聚合物膜。 聚合物膜可以结合到其中使用膜作为区域形成嵌段共聚物的表面改性层的结构中，并且该结构可以通过嵌段共聚物光刻用于图案转移应用。 聚合物膜中的无规共聚物链之间的交联或无规共聚物链与基材表面之间的连接的特征在于它们可以在相对温和的条件下裂解。

    BLOCK COPOLYMER-BASED MASK STRUCTURES FOR THE GROWTH OF NANOPATTERNED POLYMER BRUSHES
    9.
    发明申请
    BLOCK COPOLYMER-BASED MASK STRUCTURES FOR THE GROWTH OF NANOPATTERNED POLYMER BRUSHES 有权
    用于纳米聚合物刷的生长的基于嵌段共聚物的掩模结构

    公开(公告)号：US20140272673A1

    公开(公告)日：2014-09-18

    申请号：US13800178

    申请日：2013-03-13

    Applicant: Wisconsin Alumni Research Foundation

    Inventor： Padma Gopalan ,  Daniel Patrick Sweat ,  Myungwoong Kim ,  Eungnak Han

    IPC: G03F7/20 ,  G03F1/50

    CPC classification number: G03F1/50 ,  B05D5/00 ,  B05D2506/00 ,  G03F7/0002 ,  G03F7/20

    Abstract: Block copolymer-based mask structures for the growth of patterned polymer brushes via surface-initiated atom transfer radical polymerization (SI-ATRP) are provided. Also provided are methods of making the mask structures and methods of using the mask structures to grow patterned polymer brushes. The mask structures comprise a substrate having a surface, a neutral layer comprising a crosslinked copolymer film disposed on the surface of the substrate and a domain-forming block copolymer film disposed on the crosslinked copolymer film. The crosslinked copolymer film comprises crosslinked random copolymer chains having pendant alkyl halide functional groups that are capable of acting as ATRP initiating sites.

    Abstract translation: 提供了通过表面起始原子转移自由基聚合（SI-ATRP）生长图案化聚合物刷的基于嵌段共聚物的掩模结构。 还提供了制造掩模结构的方法和使用掩模结构来生长图案化聚合物刷的方法。 掩模结构包括具有表面的基材，包含设置在基材表​​面上的交联共聚物膜的中性层和设置在交联共聚物膜上的区域形成嵌段共聚物膜。 交联共聚物膜包括具有能够作为ATRP起始位点的烷基卤官能团侧基的交联无规共聚物链。

Patent Agency Ranking