公开(公告)号：JP2001237497A

公开(公告)日：2001-08-31

申请号：JP2000396560

申请日：2000-12-27

Applicant: XEROX CORP

Inventor： CHRISTOPHER L CHUA ,  PHILIP D FLOYD ,  PAOLI THOMAS L ,  DEIKAI SAN

IPC: G02B6/122 ,  B81B1/00 ,  G02B6/12 ,  G02B6/13 ,  G02B6/132 ,  G02B6/136 ,  H01L27/15 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223

Abstract: PROBLEM TO BE SOLVED: To solve the problem, where it is especially severe for a device where an oxide layer is embedded substantially deep under a wafer surface, such as a vertical cavity surface radiation laser, related to a conventional method, in which the embedded oxide layer is accessed by mesa-etch, a non-flatness level of the wafer is deteriorated to cause following complex processes, and further, a large amount of removed substance causes the mechanical integrity of the device and to decrease increases its heat resistance. SOLUTION: A passive semiconductor structure 400 comprises a base layer, plural semiconductor layers which are formed on the base layer and comprise at least one semiconductor layer comprising oxidizable substance, and at least one hole, which extends from a top layer and enters at least one semiconductor layer comprising oxidizable substance. Since the substance between cavities etched remains as is, excellent mechanical integrity and thermal conductivity are maintained.

公开(公告)号：JP2001235369A

公开(公告)日：2001-08-31

申请号：JP2000379910

申请日：2000-12-14

Applicant: XEROX CORP

Inventor： DEIKAI SAN ,  JOEL A KUBII ,  ALEX T TRAN ,  PEETERS ERIC

IPC: B81B3/00 ,  G01J3/26 ,  G02B5/28

Abstract: PROBLEM TO BE SOLVED: To provide a compact and economical spectrophotometer with a color detecting ability capable of being assembled in a color printer. SOLUTION: The Fabry-Perot spectrophotometer adjustable in a micro electronic mechanical manner is provided for color detection. The light input to a Fabry-Perot filter adjusted by a switched capacitor circuit is performed by optical fiber, and the spectral band intensity is detected by an integrated light detector.

公开(公告)号：JP2000352943A

公开(公告)日：2000-12-19

申请号：JP2000159277

申请日：2000-05-30

Applicant: XEROX CORP

Inventor： PEETERS ERIC ,  JACKSON HOO ,  FEISHIA PAN ,  RAJU B APUTO ,  KUBBY JOEL A ,  FULKS RONALD T ,  DEIKAI SAN ,  MAEDA PATRICK Y ,  DAVID FALK ,  ROBERT THORNTON ,  BRINGANS ROSS ,  G A NEVILLE CONELL ,  PHILIP DON FLOYD ,  TOAN AN VO ,  CONRAD VAN SHUIRENBAAGU

IPC: G09F9/37 ,  G02B26/02 ,  G09G3/20 ,  G09G3/34 ,  H04N5/66 ,  H04N5/74 ,  H04N9/30 ,  H04N9/31

Abstract: PROBLEM TO BE SOLVED: To provide a bistable shutter display device capable of realizing both of a small-sized screen high resolution device and a large-sized display. SOLUTION: The shutter assembly A is constituted of a transparent facial plate layer 10 which is arranged in order to protect the assembly from the influence of an environment, conductive layers 12 which are pattern-formed by vertical side walls 14 forming capvities 15, conductive shutters 18 including shutter segments 20 which are supported by springs 22, spacer layer 26, an electrically insulated bottom layer 28, string address electrodes 24 on the bottom layer 28, electric terminals for supplying bias voltages which are selectively applied to the side walls, address lines supplying address signals which are selectively applied to the shutter assembly and address signal lines which are connected to the string address electrodes 24.

公开(公告)号：JP2001251017A

公开(公告)日：2001-09-14

申请号：JP2000396575

申请日：2000-12-27

Applicant: XEROX CORP

Inventor： CHRISTOPHER L CHUA ,  PHILIP D FLOYD ,  PAOLI THOMAS L ,  DEIKAI SAN

IPC: H01L21/764 ,  H01L21/205 ,  H01L21/762 ,  H01L27/15 ,  H01L29/06 ,  H01S5/183 ,  H01S5/22

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor structure which oxidizes a buried layer in a plane lateral direction in various applications of a semiconductor; and its manufacturing method. SOLUTION: Instead of forming a mesa which exposes a side wall of a layer to be oxidized, a buried layer 120 to be oxidized is accessed by use of a plurality of etched cavities 110. A profile and size of the obtained oxidized region are defined by a profile of each cavity and a mutual arrangement of the cavity. As an area between the cavities 110 is still a plane, subsequent steps, for example, a formation of an electric contact and a photolithograpy are facilitated.

公开(公告)号：JP2001237410A

公开(公告)日：2001-08-31

申请号：JP2000396561

申请日：2000-12-27

Applicant: XEROX CORP

Inventor： CHRISTOPHER L CHUA ,  PHILIP D FLOYD ,  PAOLI THOMAS L ,  DEIKAI SAN

IPC: G02B6/122 ,  G02B6/13 ,  H01L27/15 ,  H01S5/026 ,  H01S5/183 ,  H01S5/22

Abstract: PROBLEM TO BE SOLVED: To solve the problem in that the normal method for accessing a buried oxide layer through mesa etching complicates the next process step because of the thereby elevated level of the non-planarity of a wafer. SOLUTION: The optoelectronic integrated circuit comprises a first semiconductor device having a topmost surface and bottom surface, a second semiconductor device having a first surface, and at least one hole which is located between the bottom surface of the first semiconductor device and the first surface of the second semiconductor device and extends from the topmost surface to an oxidizable layer to gain entry. The etched cavity method provides easy means for forming electrically isolated regions between the devices in the optoelectronic integrated circuit.