公开(公告)号：JP2007258403A

公开(公告)日：2007-10-04

申请号：JP2006080140

申请日：2006-03-23

Applicant: United Microelectronics Corp ,  聯華電子股▲ふん▼有限公司

Inventor： CHEN MEI-LIANG ,  SUNG SU-JEN ,  LAI KUO-CHIH ,  CHEN JEI-MING

IPC: H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide the structure of a porous low dielectric constant material thin film and related manufacturing method for solving various problems associated with the conventional technology.
SOLUTION: The method of manufacturing the porous low dielectric constant material thin film includes processes of: (a) preparing a substrate; (b) conducting a first chemical vapor deposition (CVD) process, and introducing a backbone precursor into a deposition chamber to form an interfacial dielectric layer on the substrate; (c) conducting a second CVD process, introducing a porogen precursor into the deposition chamber while at the same time introducing a backbone precursor, and combining the porogen precursor with the backbone precursor to form a backbone layer containing porogen on the interfacial dielectric layer; and (d) removing the porogen out of the backbone layer to form an ultralow dielectric constant material layer having a plurality of pores. The interfacial dielectric layer and the ultralow dielectric constant material layer constitute the porous low dielectric constant material thin film.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供多孔低介电常数材料薄膜的结构以及用于解决与传统技术相关的各种问题的相关制造方法。 解决方案：制造多孔低介电常数材料薄膜的方法包括以下工艺：（a）制备衬底; （b）进行第一化学气相沉积（CVD）工艺，并将骨架前体引入沉积室以在衬底上形成界面介电层; （c）进行第二CVD工艺，将致孔剂前体引入沉积室，同时引入骨架前体，并将致孔剂前体与骨架前体组合以在界面介电层上形成含有致孔剂的骨架层; 和（d）从骨架层除去致孔剂以形成具有多个孔的超低介电常数材料层。 界面电介质层和超低介电常数材料层构成多孔低介电常数材料薄膜。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2005215636A

公开(公告)日：2005-08-11

申请号：JP2004025770

申请日：2004-02-02

Applicant: United Microelectronics Corp ,  聯華電子股▲分▼有限公司

Inventor： KO SEIU ,  RYU II ,  KYO HAKURYO

IPC: G02B5/28 ,  G02B5/26 ,  G02F1/1335 ,  G03B21/00

Abstract: PROBLEM TO BE SOLVED: To provide a bevel gradient dichroic film, used in an off-axis type LCOS (liquid crystal on silicon) display device. SOLUTION: The bevel gradient dichroic film is equipped with a dichroic film having film characteristics, including gradient direction. The gradient direction depends on the incident angle of incident light so as to provide the optical characteristics that the light spots of the incident light on the dichroic film are distributed uniformly. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供用于离轴型LCOS（硅液晶）显示装置的斜面梯度二向色膜。

解决方案：斜面梯度二向色膜配备有具有膜特性的二向色膜，包括梯度方向。 梯度方向取决于入射光的入射角，以提供均匀分布在二向色膜上的入射光的光斑的光学特性。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004212806A

公开(公告)日：2004-07-29

申请号：JP2003001443

申请日：2003-01-07

Applicant: United Microelectronics Corp ,  聯華電子股▲分▼有限公司

Inventor： KAN DAISO ,  RAN EKISEI ,  CHIN SEIRYU

IPC: G02F1/1337

CPC classification number: G02F1/133784

Abstract: PROBLEM TO BE SOLVED: To enhance rubbing performance by decreasing the defects of rubbing and to prolong the lifetime of a roller and to improve the efficiency of rubbing in a rubbing process.
SOLUTION: The rubbing device further has a conditioning roller, in addition to the rubbing roller, so as to promptly restore the rubbing roller in order to prolong the lifetime of the roller and to improve the efficiency of rubbing in a rubbing process. The rubbing device employs the conditioning roller in addition to the rubbing roller in such a manner, and as a result thereof, the rubbing device eventually newly includes a conditioning process for adjusting the rubbing roller in the rubbing process. The cycle time of manufacturing can be thereby shortened and productivity can be improved.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004172620A

公开(公告)日：2004-06-17

申请号：JP2003385281

申请日：2003-11-14

Applicant: United Microelectronics Corp ,  聯華電子股▲ふん▼有限公司

Inventor： RO KATETSU ,  RI DAII ,  WANG KUANG-CHIH ,  YANG MING-SHENG

IPC: H01L23/522 ,  H01L21/027 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a high-performance integrated circuit, particularly an integrated circuit with air gaps that fully supports metal interconnection, for the solution of problems associated with the prior art. SOLUTION: The structure of the integrated circuit comprises: a substrate 11 with an underlayer 12; the first metallic pattern 13 formed in the underlayer; the second metallic layer 17 formed above the first metallic pattern; a supporting structure with an isotropic-etched dielectric layer 14 that supports the second metallic pattern formed between the first metallic pattern and the second metallic pattern; and multiple air gaps 18a formed in a gap in the second metallic pattern that is composed of a capping layer 19. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004158645A

公开(公告)日：2004-06-03

申请号：JP2002322867

申请日：2002-11-06

Applicant: United Microelectronics Corp ,  聯華電子股▲分▼有限公司

Inventor： SO SHUKUGA ,  KO KYOKO ,  CHIN RITSUTETSU

IPC: H01L21/331 ,  H01L29/732 ,  H01L29/737

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a self-alignment transistor, which can simplify the manufacturing process and reduce costs in the manufacturing process.
SOLUTION: In the method of manufacturing a self-alignment bipolar transistor on a substrate 200 including an epitaxial layer 202, a first insulating layer 204 and a second insulating layer 206 are sequentially formed, and an opening is formed in the second insulating layer. On the sidewall of this opening, a conductive spacer 210 is formed, and using the second insulating layer and conductive spacer as a mask, the first insulating layer within the opening is removed. Then a conductive layer 212 as an emitter is formed within the opening, and then the second insulating layer is completely removed. This emitter is subjected to doping. Using the emitter and the conductive spacer as a mask, one portion of the first insulating layer is removed, and using the emitter and conductive spacer as a mask, the epitaxial layer is subjected to different doping to change one portion of the layer into a base contact region 218.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003179140A

公开(公告)日：2003-06-27

申请号：JP2002358268

申请日：2002-12-10

Applicant: UNITED MICROELECTRONICS CORP

Inventor： YEW TRI-RUNG ,  RYU MOSHO ,  RO KATETSU ,  SUN SHIH-WEI

IPC: H01L21/3065 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an integrated circuit by a double-damascene process which exhibits a wide process flexibility and can be easily adapted in mass-production process. SOLUTION: After an etch stop layer 54 is patterned for forming an opening 72 corresponding to a pattern in a connection which is formed on the first level of a two-level connection structure, an intermetallic dielectric layer 58 is provided on it and a photoresist mask 62 is provided on it. Openings 64 and 66 of the mask 62 correspond to the wiring pattern provided on the second level of the connection structure and a dielectric layer 58 is partially exposed from them. The dielectric layer 58 is etched and the etching is advanced in such a way that an opening 68 is produced in the exposed part of the stop layer 54 from the opening 72 of the interlayer dielectric layer 52. In other words, openings for both of the wiring on the second level and the connection on the first level are demarcated by a single etching process. Further, the opening 72 of the stop layer is tapered with its upper diameter being larger than its lower diameter. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003059902A

公开(公告)日：2003-02-28

申请号：JP2002214012

申请日：2002-07-23

Applicant: United Microelectronics Corp ,  聯華電子股▲分▼有限公司

Inventor： WU YANN-PYNG ,  HO YUEH-FENG ,  SUN GOW-WEI ,  HUNG JEN-KU

IPC: H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/31138 ,  H01L21/31116

Abstract: PROBLEM TO BE SOLVED: To provide a method for precleaning a polymer debris to be removed by softening and burning the debris.
SOLUTION: In the method for precleaning a polymer debris, etching treatment using a perfluocarbon gas is carried out and then a specific gas mixture is provided. Next, a plasma generated from the gas mixture is used to preclean a polymer debris. The specific gas mixture is selected from the group of a gas mixture of oxygen and nitrogen, a gas mixture of hydrogen and argon, a gas mixture of argon and nitrogen, and a gas mixture of oxygen and argon. The plasma generated from the gas mixture can perfectly remove the polymer debris in the next cleaning operation in order to soften, burn and remove the polymer debris. Therefore, a running time for the next cleaning operation can be shortened.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供通过软化和燃烧碎屑来预清洁待除去的聚合物碎屑的方法。 解决方案：在聚合物碎片预清洗方法中，进行使用全氟烃气体的蚀刻处理，然后提供特定的气体混合物。 接下来，使用从气体混合物产生的等离子体来清洗聚合物碎屑。 特定的气体混合物选自氧气和氮气的气体混合物，氢气和氩气的气体混合物，氩气和氮气的气体混合物以及氧气和氩气的气体混合物。 从气体混合物产生的等离子体可以在下一次清洁操作中完全去除聚合物碎屑，以便软化，燃烧和除去聚合物碎片。 因此，可以缩短下一次清洁操作的运行时间。

公开(公告)号：JP2002032991A

公开(公告)日：2002-01-31

申请号：JP2000211185

申请日：2000-07-12

Applicant: UNITED MICROELECTRONICS CORP

Inventor： KIM C HARDY

IPC: G11C11/413 ,  H01L21/822 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To provide a reference voltage generator for generating reference voltage being lower than power source voltage by quantity being selected previously. SOLUTION: A reference voltage source generates first reference voltage being higher than a ground potential by VREF. A first load element is coupled to a ground node, and generates an internal reference signal decided by magnitude of a current flowing in the first load element. A differential amplifier generates a signal decided by difference between a first input signal and a second input signal. A current adjusting switch has a control node coupled to an output of the differential amplifier, and it is coupled so that a current flowing in the first load element is decided. A second load element is coupled to the first load element in series and coupled to a power source node, its impedance is selected so that the second load element generates the second reference voltage.

公开(公告)号：JP2001166451A

公开(公告)日：2001-06-22

申请号：JP34312999

申请日：1999-12-02

Applicant: UNITED MICROELECTRONICS CORP

Inventor： KO SHUNJIN ,  KO GIYU ,  CHIN KEIJUN

IPC: H01L21/027 ,  G03F1/28 ,  G03F1/68 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask having three different phase shift regions for eliminating the problem that corners have roundness in unexposed regions by diffraction and scattering of light, i.e., a corner round problem and a method for manufacturing the same. SOLUTION: The surface of a transparent substrate is provided with opaque mask patterns 415 which cover the first part of the transparent substrate and expose the second part of the transparent substrate. The proximate regions around the corners of the opaque mask patterns are evenly divided to the three different phase shift regions 430, 440 and 450 at a phase shift of 120 deg. from each other. These three phase shift regions are achieved by two times of etching steps for forming the first phase shift 430 and the second phase shift region 440. Namely, the region subjected to both of two times of the etching steps is the third phase shift region 450.

公开(公告)号：JP2001125253A

公开(公告)日：2001-05-11

申请号：JP30603199

申请日：1999-10-27

Applicant: UNITED MICROELECTRONICS CORP

Inventor： RIN BENJAMIN ZUUMIN

IPC: H01L21/027 ,  G03F1/29 ,  G03F1/32 ,  G03F1/68 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask production method that improves the alignment accuracy of patterns and reduced in processing cost. SOLUTION: A photoresist layer is formed on a shielding layer in such a way that the photoresist layer has a vertical side wall, a deposited layer is uniformly formed on the photoresist layer and the shielding layer surrounding the photoresist layer, and the deposited layer is silylanized. In order to form a spacer on the vertical side wall, the deposited layer on the photoresist layer and the shielding layer surrounding the photoresist layer is removed and the deposited layer covering the top of the vertical side wall of the photoresist layer is partially removed. The shielding layer not covered with the photoresist layer and the spacer and a phase shifter layer are vertically removed and spacer and the shielding layer under the spacer are vertically removed. The photoresist layer is thoroughly removed so as to complete the objective phase shift mask.