公开(公告)号：US3193677A

公开(公告)日：1965-07-06

申请号：US28209663

申请日：1963-05-21

Applicant: BARNES ENG CO

Inventor： MCHENRY THOMAS F

IPC: G01J1/36 ,  G01N21/31 ,  G01N21/35

CPC classification number: G01N21/314 ,  G01J2001/366 ,  G01N21/3504 ,  G01N2201/069

公开(公告)号：KR101415376B1

公开(公告)日：2014-07-04

申请号：KR1020130028709

申请日：2013-03-18

Applicant: 조선대학교산학협력단

Inventor： 안태정 ,  송일신 ,  김찬영

IPC: G01J1/02 ,  G01J1/34

CPC classification number: G01J1/36 ,  G01J1/0228 ,  G01J1/0492 ,  G01J2001/0496 ,  G01J2001/366

Abstract: The present invention relates to an ultraviolet ray sensor based on an etched optical fiber Bragg grating and an azobenzene polymer, which improves a reaction velocity as to an ultraviolet ray and a recovery velocity to an initial value in case the ultraviolet ray disappears, as maintaining the function of the ultraviolet ray sensor based on an optical fiber grating coated with the conventional azobenzene polymer as it is, by forming an etching area in a fixed section along the length direction of an optical fiber and then forming an optical reaction part by coating an azobenzene polymer on the etching area. The ultraviolet ray sensor based on an etched optical fiber Bragg grating and an azobenzene polymer according to the present invention includes an optical fiber which has a fiber Bragg grating (FBG) formed in the etching area as including the etching area; and the azobenzene polymer for inducing a tensile force in the fiber Bragg grating when exposed to an ultraviolet ray by being coated in the etching area of the optical fiber in the state of surrounding the fiber Bragg grating. Here, the etching area is formed by etching a whole cladding or a part of a core of a fixed section along the length direction of the optical fiber.

Abstract translation: 本发明涉及一种基于蚀刻光纤布拉格光栅和偶氮苯聚合物的紫外线传感器，其在紫外线消失的情况下将紫外线的反应速度和恢复速度提高到初始值，因为保持 基于通过常规偶氮苯聚合物涂覆的光纤光栅的紫外线传感器的功能，通过沿着光纤的长度方向在固定部分中形成蚀刻区域，然后通过涂覆偶氮苯来形成光学反应部分 聚合物在蚀刻区域上。 根据本发明的基于蚀刻光纤布拉格光栅和偶氮苯聚合物的紫外线传感器包括在蚀刻区域中形成有包括蚀刻区域的光纤布拉格光栅（FBG）的光纤; 以及偶氮苯聚合物，当在围绕光纤布拉格光栅的状态下被涂覆在光纤的蚀刻区域中时，在光纤布拉格光栅中暴露于紫外线时产生张力。 这里，通过沿着光纤的长度方向蚀刻整个包层或固定部分的芯部的一部分来形成蚀刻区域。