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1.发明申请Method for Pore Sealing of Porous Materials Using Polyimide Langmuir-Blodgett Film 审中-公开使用聚酰亚胺Langmuir-Blodgett膜进行孔隙密封的方法公开(公告)号：US20170021604A1
公开(公告)日：2017-01-26
申请号：US15285445
申请日：2016-10-04
Applicant: IMEC , St. Petersburg Electrotechnical University
Inventor： Victor Luchinin , Svetlana Goloudina , Vyacheslav Pasyuta , Alexey Ivanov , Mikhail Baklanov , Mikhail Krishtab
CPC classification number: C08J5/18 , B05D1/20 , B05D1/204 , B05D1/208 , B05D2505/50 , B32B18/00 , B32B27/04 , B32B27/281 , B32B37/15 , B32B2260/046 , B32B2305/026 , B32B2305/07 , B32B2307/00 , B32B2307/204 , B32B2379/08 , B32B2457/00 , B82Y30/00 , B82Y40/00 , C08G73/1067 , C08J2379/08 , C08J2483/02 , C09D179/08 , H01L21/02285 , H01L21/02318 , H01L23/5329 , H05K1/03 , H05K3/143 , H05K2201/01 , H05K2201/0104 , H05K2201/0116 , H05K2201/0154 , H05K2201/0162 , Y10T428/249979 , Y10T428/249991 , C08K5/175
Abstract: Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.
Abstract translation: 用于孔密封多孔基材的方法，包括：在液体表面上形成聚酰亚胺前体的连续单层，使用Langmuir-Blodgett技术将所述聚酰亚胺前体单层转移到多孔基材上，并将转移的聚酰亚胺前体单层酰亚胺化，从而形成 多孔基材上的聚酰亚胺密封层。 具有至少一个表面的多孔基材，其上设有密封层以密封基材的孔，其中密封层是具有几个单层厚度的聚酰亚胺，并且其中聚酰亚胺不渗透到孔中。
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2.发明申请Method for Pore Sealing of Porous Materials Using Polyimide Langmuir-Blodgett Film 有权使用聚酰亚胺Langmuir-Blodgett膜进行孔隙密封的方法公开(公告)号：US20130251978A1
公开(公告)日：2013-09-26
申请号：US13847457
申请日：2013-03-19
Applicant: IMEC , ST. PETERSBURG ELECTROTECHNICAL UNIVERSITY
Inventor： Victor Luchinin , Svetlana Goloudina , Vyacheslav Pasyuta , Alexey Ivanov , Mikhail Baklanov , Mikhail Krishtab
IPC: B32B37/15
CPC classification number: B32B37/15 , B05D1/20 , B05D1/208 , B32B18/00 , B32B27/04 , B32B27/281 , B32B2260/046 , B32B2305/026 , B32B2305/07 , B32B2307/00 , B32B2307/204 , B32B2379/08 , B32B2457/00 , C08G73/1067 , C09D179/08 , H01L21/02285 , H01L21/02318 , H05K1/03 , H05K3/143 , H05K2201/01 , H05K2201/0104 , H05K2201/0116 , H05K2201/0154 , H05K2201/0162 , Y10T428/249979 , Y10T428/249991 , C08K5/175
Abstract: Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.
Abstract translation: 用于孔密封多孔基材的方法，包括：在液体表面上形成聚酰亚胺前体的连续单层，使用Langmuir-Blodgett技术将所述聚酰亚胺前体单层转移到多孔基材上，并将转移的聚酰亚胺前体单层酰亚胺化，从而形成 多孔基材上的聚酰亚胺密封层。 具有至少一个表面的多孔基材，其上设有密封层以密封基材的孔，其中密封层是具有几个单层厚度的聚酰亚胺，并且其中聚酰亚胺不渗透到孔中。
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3.发明公开Method for pore sealing of porous materials using polyimide langmuir-blodgett film 审中-公开一种用于使用聚酰亚胺朗缪尔 - 布罗杰特膜密封多孔材料的孔隙的工艺
公开(公告)号：EP2662151A1
公开(公告)日：2013-11-13
申请号：EP13159886.4
申请日：2013-03-19
Applicant: IMEC , St. Petersburg Electrotechnical University
Inventor： Luchinin, Victor , Goloudina, Svetlana , Pasyuta, Vyacheslav , Ivanov, Alexey , Baklanov, Mikhail , Krishtab, Mikhail
CPC classification number: B32B37/15 , B05D1/20 , B05D1/208 , B32B18/00 , B32B27/04 , B32B27/281 , B32B2260/046 , B32B2305/026 , B32B2305/07 , B32B2307/00 , B32B2307/204 , B32B2379/08 , B32B2457/00 , C08G73/1067 , C09D179/08 , H01L21/02285 , H01L21/02318 , H05K1/03 , H05K3/143 , H05K2201/01 , H05K2201/0104 , H05K2201/0116 , H05K2201/0154 , H05K2201/0162 , Y10T428/249979 , Y10T428/249991 , C08K5/175
Abstract: Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.
Abstract translation: 对于封孔的多孔质基材的方法，包括：在液体表面上形成聚酰亚胺前体的连续的单层，传递环所述聚酰亚胺前体的单层到具有朗缪尔 - 布洛杰特法，多孔基底，和酰亚胺化被转让聚酰亚胺前体的单层，从而形成 在多孔基底的聚酰亚胺密封层。 具有其上设置有密封层以密封基板的孔的至少一个表面的多孔基材，worin密封层是具有一定厚度的几个单层的聚酰亚胺和worin不存在聚酰亚胺到孔中的渗透。
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公开(公告)号：EP2662151B1
公开(公告)日：2018-08-29
申请号：EP13159886.4
申请日：2013-03-19
Applicant: IMEC VZW , St. Petersburg Electrotechnical University
Inventor： Luchinin, Victor , Goloudina, Svetlana , Pasyuta, Vyacheslav , Ivanov, Alexey , Baklanov, Mikhail , Krishtab, Mikhail
CPC classification number: B32B37/15 , B05D1/20 , B05D1/208 , B32B18/00 , B32B27/04 , B32B27/281 , B32B2260/046 , B32B2305/026 , B32B2305/07 , B32B2307/00 , B32B2307/204 , B32B2379/08 , B32B2457/00 , C08G73/1067 , C09D179/08 , H01L21/02285 , H01L21/02318 , H05K1/03 , H05K3/143 , H05K2201/01 , H05K2201/0104 , H05K2201/0116 , H05K2201/0154 , H05K2201/0162 , Y10T428/249979 , Y10T428/249991 , C08K5/175
Abstract: Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.
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公开(公告)号：EP3259963A1
公开(公告)日：2017-12-27
申请号：EP16752876.9
申请日：2016-02-16
Applicant: Interplex Industries, Inc. , Schneider, Richard , Lynch, Joseph J.
Inventor： SCHNEIDER, Richard , LYNCH, Joseph, J.
IPC: H05K1/18
CPC classification number: H05K1/0209 , H01R12/526 , H02G5/005 , H05K1/18 , H05K3/429 , H05K3/4679 , H05K2201/01 , H05K2201/0323 , H05K2201/10242 , H05K2201/10303 , H05K2201/2018
Abstract: A multilayer bus board comprising a multilayer stacked assembly including a plurality of electrically conductive first layers, and at least one second dielectric layer disposed between adjacent first layers; and a frame formed of a dielectric material, the frame encapsulating at least a portion of the multilayer stacked assembly and mechanically maintaining the first and second layers in secure aligned abutting relation.
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Patent Agency Ranking
公开(公告)号：US09961767B2
公开(公告)日：2018-05-01
申请号：US14990978
申请日：2016-01-08
Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.
Inventor： Kazuhiro Oshima , Hiroharu Yanagisawa , Kazuhiro Kobayashi , Katsuya Fukase , Ken Miyairi
IPC: H05K1/18 , H05K1/03 , H05K3/00 , H05K3/46 , H05K7/12 , H05K7/00 , H05K1/02 , H05K1/11 , H05K3/34
CPC classification number: H05K1/036 , H05K1/02 , H05K1/0296 , H05K1/0298 , H05K1/0366 , H05K1/111 , H05K1/181 , H05K3/007 , H05K3/3436 , H05K3/4682 , H05K2201/01 , H05K2201/0183 , H05K2201/10
Abstract: A circuit board includes an insulating layer including first and second insulator films, a first wiring layer embedded in the first insulator film and including pads and first wiring patterns exposed from the first insulator film, and a second wiring layer including second wiring patterns formed on the second insulator film and via wirings penetrating the insulating layer and electrically connecting the second wiring patterns to the first wiring layer. The first insulator film is made of a reinforcement-free resin that includes no reinforcing member. The second insulator film is made of a reinforcing member impregnated with a resin.
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7.发明授权Method for pore sealing of porous materials using polyimide langmuir-blodgett film 有权使用聚酰亚胺langmuir-blodgett膜的多孔材料孔密封方法公开(公告)号：US09492841B2
公开(公告)日：2016-11-15
申请号：US13847457
申请日：2013-03-19
Applicant: IMEC , St. Petersburg Electrotechnical University
Inventor： Victor Luchinin , Svetlana Goloudina , Vyacheslav Pasyuta , Alexey Ivanov , Mikhail Baklanov , Mikhail Krishtab
IPC: B05D1/20 , B32B37/15 , B32B18/00 , B32B27/04 , B32B27/28 , H05K1/03 , H01L21/02 , H05K3/14 , C09D179/08 , C08G73/10
CPC classification number: B32B37/15 , B05D1/20 , B05D1/208 , B32B18/00 , B32B27/04 , B32B27/281 , B32B2260/046 , B32B2305/026 , B32B2305/07 , B32B2307/00 , B32B2307/204 , B32B2379/08 , B32B2457/00 , C08G73/1067 , C09D179/08 , H01L21/02285 , H01L21/02318 , H05K1/03 , H05K3/143 , H05K2201/01 , H05K2201/0104 , H05K2201/0116 , H05K2201/0154 , H05K2201/0162 , Y10T428/249979 , Y10T428/249991 , C08K5/175
Abstract: Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.
Abstract translation: 用于孔密封多孔基材的方法，包括：在液体表面上形成聚酰亚胺前体的连续单层，使用Langmuir-Blodgett技术将所述聚酰亚胺前体单层转移到多孔基材上，并将转移的聚酰亚胺前体单层酰亚胺化，从而形成 多孔基材上的聚酰亚胺密封层。 具有至少一个表面的多孔基材，其上设有密封层以密封基材的孔，其中密封层是具有几个单层厚度的聚酰亚胺，并且其中聚酰亚胺不渗透到孔中。
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公开(公告)号：US20160234932A1
公开(公告)日：2016-08-11
申请号：US14990978
申请日：2016-01-08
Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.
Inventor： Kazuhiro OSHIMA , Hiroharu YANAGISAWA , Kazuhiro KOBAYASHI , Katsuya FUKASE , Ken MIYAIRI
CPC classification number: H05K1/036 , H05K1/02 , H05K1/0296 , H05K1/0298 , H05K1/0366 , H05K1/111 , H05K1/181 , H05K3/007 , H05K3/3436 , H05K3/4682 , H05K2201/01 , H05K2201/0183 , H05K2201/10
Abstract: A circuit board includes an insulating layer including first and second insulator films, a first wiring layer embedded in the first insulator film and including pads and first wiring patterns exposed from the first insulator film, and a second wiring layer including second wiring patterns formed on the second insulator film and via wirings penetrating the insulating layer and electrically connecting the second wiring patterns to the first wiring layer. The first insulator film is made of a reinforcement-free resin that includes no reinforcing member. The second insulator film is made of a reinforcing member impregnated with a resin.
Abstract translation: 电路板包括绝缘层，包括第一绝缘膜和第二绝缘膜，第一布线层嵌入第一绝缘膜中，并且包括焊盘和从第一绝缘膜露出的第一布线图案，第二布线层包括形成在第一绝缘膜上的第二布线图案 第二绝缘体膜和穿过绝缘层的通孔布线，并将第二布线图案电连接到第一布线层。 第一绝缘膜由无增强树脂制成，不含增强材料。 第二绝缘膜由浸渍有树脂的加强构件制成。
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公开(公告)号：WO2016133861A1
公开(公告)日：2016-08-25
申请号：PCT/US2016/018000
申请日：2016-02-16
Applicant: INTERPLEX INDUSTRIES, INC. , SCHNEIDER, Richard , LYNCH, Joseph, J.
Inventor： SCHNEIDER, Richard , LYNCH, Joseph, J.
IPC: H05K1/18
CPC classification number: H05K1/0209 , H01R12/526 , H02G5/005 , H05K1/18 , H05K3/429 , H05K3/4679 , H05K2201/01 , H05K2201/0323 , H05K2201/10242 , H05K2201/10303 , H05K2201/2018
Abstract: A multilayer bus board comprising a multilayer stacked assembly including a plurality of electrically conductive first layers, and at least one second dielectric layer disposed between adjacent first layers; and a frame formed of a dielectric material, the frame encapsulating at least a portion of the multilayer stacked assembly and mechanically maintaining the first and second layers in secure aligned abutting relation.
Abstract translation: 一种多层总线板，包括包括多个导电的第一层的多层堆叠组件和设置在相邻的第一层之间的至少一个第二介电层; 以及由电介质材料形成的框架，所述框架封装所述多层堆叠组件的至少一部分，并将所述第一和第二层机械地保持为安全对准的邻接关系。
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公开(公告)号：KR1020170118839A
公开(公告)日：2017-10-25
申请号：KR1020177026322
申请日：2016-02-16
Applicant: 인터플렉스 인더스트리즈 인코포레이티드
CPC classification number: H05K1/0209 , H01R12/526 , H02G5/005 , H05K1/18 , H05K3/429 , H05K3/4679 , H05K2201/01 , H05K2201/0323 , H05K2201/10242 , H05K2201/10303 , H05K2201/2018
Abstract: 다층버스보드는복수의전기적전도성제 1 층들, 및인접한제 1 층들간에배치된적어도하나의제 2 유전체층을포함하는다층적층된어셈블리; 및유전체재료로형성되는프레임을포함하고, 프레임은상기다층적층된어셈블리의적어도일부를캡슐화하고고정식으로정렬된맞댐관계로상기제 1 층및 상기제 2 층을기계적으로유지시킨다.
Abstract translation: 该多层总线板包括多层堆叠组件，该多层堆叠组件包括多个导电第一层和至少一个设置在相邻第一层之间的第二介电层; 和包括介电材料形成的框架，并且框架被保持在第一层和第二层是与多层层压组件的固定配置的封装的至少一部分并且机械地邻接关系。
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