公开(公告)号：US20010016225A1

公开(公告)日：2001-08-23

申请号：US09783999

申请日：2001-02-16

Inventor： Kunie Ogata ,  Ryoichi Uemura ,  Masanori Tateyama ,  Toshihiko Nishigaki

IPC: B05D003/12 ,  B05C011/08

CPC classification number: H01L21/67253 ,  B05C11/08

Abstract: A coating film forming apparatus comprising a coating solution supplying unit which supplies a coating solution to a rotating substrate, a memory which stores a first correlation between an atmospheric pressure and a film thickness of the coating film formed on the substrate, and a second correlation between a film thickness and a rotation speed of the substrate, an atmospheric pressure detector which detects an actual atmospheric pressure, a film thickness computation unit which computes an actual film thickness of the coating film from the actual atmospheric pressure based on the first correlation, and a rotation speed control unit which obtains a corrected rotation speed of the substrate based on the second correlation and a difference between the actual film thickness and a target film thickness, and rotate the substrate at the corrected rotation speed.

Abstract translation: 一种涂膜形成装置，包括向旋转基板供给涂布溶液的涂布液供给单元，存储有大气压与形成在基板上的涂膜的膜厚之间的第一相关性的存储器， 基板的膜厚和旋转速度，检测实际大气压的大气压检测器，基于第一相关性从实际大气压计算涂膜的实际膜厚的膜厚计算单元，以及 旋转速度控制单元，其基于第二相关性获得基板的校正旋转速度和实际膜厚度与目标膜厚度之间的差异，并且以校正的旋转速度旋转基板。

公开(公告)号：US20010014224A1

公开(公告)日：2001-08-16

申请号：US09816233

申请日：2001-03-26

Inventor： Keizo Hasebe ,  Shuuichi Nishikido ,  Nobuo Konishi ,  Takayuki Toshima ,  Kazutoshi Yoshioka

IPC: G03D005/00 ,  G03C005/00 ,  G03D007/00 ,  G03D015/02 ,  G03D015/06 ,  B05C005/02 ,  B05C009/08 ,  B05C011/08 ,  C23C016/458

CPC classification number: G03F7/162 ,  B05C11/08

Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.