公开(公告)号：WO2021252111A1

公开(公告)日：2021-12-16

申请号：PCT/US2021/031134

申请日：2021-05-06

Applicant: RAYTHEON COMPANY

Inventor： BENEDICT, James, E. ,  BENINATI, Gregory, G. ,  PEVZNER, Mikhail ,  SIKINA, Thomas, V. ,  SOUTHWORTH, Andrew, R.

IPC: H05K3/34 ,  H05K3/00 ,  H05K3/40 ,  H05K2201/0305 ,  H05K2201/09154 ,  H05K2201/09572 ,  H05K2203/041 ,  H05K2203/043 ,  H05K2203/046 ,  H05K3/0044 ,  H05K3/0047 ,  H05K3/3485 ,  H05K3/4038

Abstract: A process of fabricating a circuit includes providing a first sheet of dielectric material including a first top surface having at least one first conductive trace and a second sheet of dielectric material including a second top surface having at least one second conductive trace, depositing a first solder bump on the at least one first conductive trace, applying the second sheet of dielectric material to the first sheet of dielectric material with bonding film sandwiched in between, bonding the first and second sheets of dielectric material to one another, and providing a conductive material to connect the first solder bump on the at least one first conductive trace to the at least one second conductive trace.