公开(公告)号：WO2021262920A2

公开(公告)日：2021-12-30

申请号：PCT/US2021/038799

申请日：2021-06-24

Applicant: CREE, INC.

Inventor： LIM, Kwangmo Chris ,  NOORI, Basim ,  MU, Qianli ,  MARBELL, Marvin ,  SHEPPARD, Scott ,  KOMPOSCH, Alexander

IPC: H01L23/66 ,  H01L23/482 ,  H03F3/19 ,  H05K1/02 ,  H01L23/498 ,  H01L23/538 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778 ,  H03F3/72 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2223/6683 ,  H01L2223/6688 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05568 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/17107 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/32235 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/83805 ,  H01L2224/92125 ,  H01L23/047 ,  H01L23/4334 ,  H01L23/4824 ,  H01L23/492 ,  H01L23/49531 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7786 ,  H01L2924/1421 ,  H01L2924/161 ,  H01L2924/171 ,  H01L2924/181 ,  H01L2924/19107 ,  H03F1/0288 ,  H03F1/526 ,  H03F2200/451 ,  H03F3/195 ,  H03F3/211 ,  H05K1/0243 ,  H05K1/113 ,  H05K2201/09627 ,  H05K2201/09636 ,  H05K2201/10545 ,  H05K3/3415 ,  H05K3/3442

Abstract: RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.