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公开(公告)号:US20230125167A1
公开(公告)日:2023-04-27
申请号:US18046231
申请日:2022-10-13
Applicant: Infineon Technologies AG
Inventor: Gerald Puehringer , Gerald Stocker , Andreas Tortschanoff , Reyhaneh Jannesari , Clement Fleury , Thomas Grille , Bernhard Jakoby , Cristina Consani
Abstract: An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.
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公开(公告)号:US12050340B2
公开(公告)日:2024-07-30
申请号:US18046231
申请日:2022-10-13
Applicant: Infineon Technologies AG
Inventor: Gerald Puehringer , Gerald Stocker , Andreas Tortschanoff , Reyhaneh Jannesari , Clement Fleury , Thomas Grille , Bernhard Jakoby , Cristina Consani
CPC classification number: G02B6/102 , G02B6/1223 , G02B2006/12104
Abstract: An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.
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