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公开(公告)号：US20220381753A1
公开(公告)日：2022-12-01
申请号：US17658564
申请日：2022-04-08
Applicant: Infineon Technologies AG
Inventor： Gerald Stocker , Elmar Aschauer , Ulf Bartl , Thomas Grille , Christoph Kovatsch , Thomas Krotscheck Ostermann
Abstract: A fluid sensor includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a thermal radiation detector on the top main surface region of the support structure; and a waveguide structure having a first and a second waveguide section on the top main surface region of the support structure. The first waveguide section guides a first portion of the thermal radiation to the thermal radiation detector and the second waveguide section guides a second portion of the thermal radiation to the thermal radiation detector. The waveguide structure enables an interaction of an evanescence field of the guided first and/or second portion of the thermal radiation with a surrounding fluid.
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公开(公告)号：US20230296502A1
公开(公告)日：2023-09-21
申请号：US18166905
申请日：2023-02-09
Applicant: Infineon Technologies AG
Inventor： Christoph Kovatsch , Elmar Aschauer , Ulf Bartl , Thomas Grille , Thomas Krotscheck Ostermann , Gerald Stocker
IPC: G01N21/3504 , G01N23/20008 , H01L21/02
CPC classification number: G01N21/3504 , G01N23/20008 , H01L21/02002 , G01N2201/068
Abstract: A monolithic fluid sensor system includes a sensor arrangement and a reference sensor arrangement that are monolithically arranged, wherein respective substrates or semiconductor substrates (wafers or semiconductor wafers) are bonded (fusion bonded or wafer bonded on wafer-level) to each other for providing the resulting monolithic fluid sensor system. The monolithic fluid sensor system particularly includes the sensor arrangement, a cover substrate, the reference sensor arrangement, and a reference cover substrate.
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公开(公告)号：US12235170B2
公开(公告)日：2025-02-25
申请号：US17658564
申请日：2022-04-08
Applicant: Infineon Technologies AG
Inventor： Gerald Stocker , Elmar Aschauer , Ulf Bartl , Thomas Grille , Christoph Kovatsch , Thomas Krotscheck Ostermann
IPC: G01N33/00 , G01J5/02 , G01J5/0802 , G01J5/0818 , G01J5/10 , G01K7/01 , G01N21/3504
Abstract: A fluid sensor includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a thermal radiation detector on the top main surface region of the support structure; and a waveguide structure having a first and a second waveguide section on the top main surface region of the support structure. The first waveguide section guides a first portion of the thermal radiation to the thermal radiation detector and the second waveguide section guides a second portion of the thermal radiation to the thermal radiation detector. The waveguide structure enables an interaction of an evanescence field of the guided first and/or second portion of the thermal radiation with a surrounding fluid.
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公开(公告)号：US20230125167A1
公开(公告)日：2023-04-27
申请号：US18046231
申请日：2022-10-13
Applicant: Infineon Technologies AG
Inventor： Gerald Puehringer , Gerald Stocker , Andreas Tortschanoff , Reyhaneh Jannesari , Clement Fleury , Thomas Grille , Bernhard Jakoby , Cristina Consani
Abstract: An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.
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Patent Agency Ranking
公开(公告)号：US12050340B2
公开(公告)日：2024-07-30
申请号：US18046231
申请日：2022-10-13
Applicant: Infineon Technologies AG
Inventor： Gerald Puehringer , Gerald Stocker , Andreas Tortschanoff , Reyhaneh Jannesari , Clement Fleury , Thomas Grille , Bernhard Jakoby , Cristina Consani
CPC classification number: G02B6/102 , G02B6/1223 , G02B2006/12104
Abstract: An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.
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公开(公告)号：US20230148014A1
公开(公告)日：2023-05-11
申请号：US17972910
申请日：2022-10-25
Applicant: Infineon Technologies AG
Inventor： Thomas Grille , Elmar Aschauer , Ulf Bartl , Christoph Kovatsch , Matic Krivec , Thomas Ostermann , Lukas Praster , Gerald Stocker
Abstract: A MEMS component is described herein, which according to one exemplary embodiment includes: a semiconductor body; an insulation layer arranged on the semiconductor body; a boundary structure arranged on the insulation layer, the semiconductor body including an opening below the boundary structure; first and second structured electrodes arranged on the insulation layer; and a piezoelectric layer comprising a thermoplastic, and at least partially bounded by the boundary structure and arranged on the insulation layer and on the first and second electrodes.
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公开(公告)号：US20220381659A1
公开(公告)日：2022-12-01
申请号：US17658554
申请日：2022-04-08
Applicant: Infineon Technologies AG
Inventor： Gerald Stocker , Elmar Aschauer , Ulf Bartl , Thomas Grille , Christoph Kovatsch , Thomas Krotscheck Ostermann
Abstract: A fluid sensor for performing a reference measurement includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a first waveguide section and a first thermal radiation detector on the top main surface region of the support structure; and a cover structure on at least one part of the first waveguide section. The first waveguide section guides a first portion of the thermal radiation emitted by the thermal emitter to the first thermal radiation detector. The first thermal radiation detector detects the guided first portion of the thermal radiation for performing the reference measurement.
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公开(公告)号：US12140514B2
公开(公告)日：2024-11-12
申请号：US17658554
申请日：2022-04-08
Applicant: Infineon Technologies AG
Inventor： Gerald Stocker , Elmar Aschauer , Ulf Bartl , Thomas Grille , Christoph Kovatsch , Thomas Krotscheck Ostermann
Abstract: A fluid sensor for performing a reference measurement includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a first waveguide section and a first thermal radiation detector on the top main surface region of the support structure; and a cover structure on at least one part of the first waveguide section. The first waveguide section guides a first portion of the thermal radiation emitted by the thermal emitter to the first thermal radiation detector. The first thermal radiation detector detects the guided first portion of the thermal radiation for performing the reference measurement.
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公开(公告)号：US20240255450A1
公开(公告)日：2024-08-01
申请号：US18420325
申请日：2024-01-23
Applicant: Infineon Technologies AG
Inventor： Thomas Grille , Gerald Stocker , Thomas Krotscheck Ostermann , Pooja Thakkar , David Tumpold , Reyhaneh Jannesari
CPC classification number: G01N25/18 , G01N1/44 , G01N33/0027
Abstract: A fluid sensor detects a target fluid and comprises thermal radiation emitters emitting a broadband thermal radiation, a waveguide structure guiding the thermal radiation comprising an evanescent field component, an optical filter structure coupled to the waveguide structure to provide a filtered thermal radiation having a center wavelength, a thermal radiation detector configured to provide a detector output signal based on a radiation strength of the filtered thermal radiation, and an actuation device for connecting the plurality of thermal radiation emitters with a power source such that the plurality of thermal radiation emitters has an operating temperature between 400 to 1300 K.
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