公开(公告)号：US09966490B1

公开(公告)日：2018-05-08

申请号：US15613828

申请日：2017-06-05

Applicant: National Taiwan University of Science and Technology

Inventor： Bohr-Ran Huang ,  Jinn Chu ,  You-Syuan Chen ,  Chia-Hao Chang

IPC: H01L31/108 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/0352 ,  H01L31/0224

CPC classification number: H01L31/1085 ,  G01J1/00 ,  H01L31/022408 ,  H01L31/0296 ,  H01L31/035227 ,  H01L31/03925 ,  H01L31/108

Abstract: An ultraviolet sensor comprises a glass substrate, a semiconductor structure, an electrode layer and a thin film metallic glass. The semiconductor structure comprises a semiconductor seed layer formed on the glass substrate and a plurality of semiconductor nanostructures formed on the semiconductor seed layer. The electrode layer is formed between the semiconductor seed layer and the plurality of semiconductor nanostructures. The thin film metallic glass is in contact with the semiconductor structure, wherein an interface between the thin film metallic glass and the semiconductor structure forms a Schottky barrier junction to inhibit dark current and increase signal-to-noise ratio.

公开(公告)号：US11170943B2

公开(公告)日：2021-11-09

申请号：US16865410

申请日：2020-05-03

Applicant: National Taiwan University of Science and Technology

Inventor： Bohr-Ran Huang ,  Adhimoorthy Saravanan ,  Shyan-Kay Jou

IPC: H01G11/36 ,  H01G11/86 ,  H01G11/24

Abstract: A supercapacitor electrode includes a substrate and at least one nitrogen-doped ultra-nanocrystalline diamond layer. The nitrogen-doped ultra-nanocrystalline diamond layer is disposed on the substrate. The nitrogen-doped ultra-nanocrystalline diamond layer is a dense continuous film. A conductivity of the supercapacitor electrode is 130 S/cm or more. In addition, a manufacturing method of a supercapacitor electrode is provided.

公开(公告)号：US20210296056A1

公开(公告)日：2021-09-23

申请号：US16865410

申请日：2020-05-03

Applicant: National Taiwan University of Science and Technology

Inventor： Bohr-Ran Huang ,  Adhimoorthy Saravanan ,  Shyan-Kay Jou

IPC: H01G11/36 ,  H01G11/24 ,  H01G11/86

Abstract: A supercapacitor electrode includes a substrate and at least one nitrogen-doped ultra-nanocrystalline diamond layer. The nitrogen-doped ultra-nanocrystalline diamond layer is disposed on the substrate. The nitrogen-doped ultra-nanocrystalline diamond layer is a dense continuous film. A conductivity of the supercapacitor electrode is 130 S/cm or more. In addition, a manufacturing method of a supercapacitor electrode is provided.