公开(公告)号：US09966490B1

公开(公告)日：2018-05-08

申请号：US15613828

申请日：2017-06-05

Applicant: National Taiwan University of Science and Technology

Inventor： Bohr-Ran Huang ,  Jinn Chu ,  You-Syuan Chen ,  Chia-Hao Chang

IPC: H01L31/108 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/0352 ,  H01L31/0224

CPC classification number: H01L31/1085 ,  G01J1/00 ,  H01L31/022408 ,  H01L31/0296 ,  H01L31/035227 ,  H01L31/03925 ,  H01L31/108

Abstract: An ultraviolet sensor comprises a glass substrate, a semiconductor structure, an electrode layer and a thin film metallic glass. The semiconductor structure comprises a semiconductor seed layer formed on the glass substrate and a plurality of semiconductor nanostructures formed on the semiconductor seed layer. The electrode layer is formed between the semiconductor seed layer and the plurality of semiconductor nanostructures. The thin film metallic glass is in contact with the semiconductor structure, wherein an interface between the thin film metallic glass and the semiconductor structure forms a Schottky barrier junction to inhibit dark current and increase signal-to-noise ratio.