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1.发明申请公开(公告)号：US20140370328A1
公开(公告)日：2014-12-18
申请号：US14012992
申请日：2013-08-28
Inventor： Jinn Chu , I Made Wahyu Diyatmika , Yee-Wen Yen , Wen-Zhi Chang
IPC: B32B15/01
CPC classification number: B32B15/01 , B32B15/013 , B32B15/018 , C22C45/10 , Y10T428/12708 , Y10T428/12715 , Y10T428/12722
Abstract: The present invention relates to a tin whisker mitigation material using thin film metallic glass underlayer, which is a thin film metallic glass (TFMG) formed between a metal substrate and a tin layer. Particularly, the TFMG can be a Zr46Ti26Ni28 underlayer or a Zr51.7Cu32.3Al9Ni underlayer, capable of blocking off the interaction occurring in the interface of a copper layer (the metal substrate) and the tin layer, so as to carry out the inhibition of tin whisker growth. Moreover, a variety of experiment data are proposed for proving that the TFMG of the Zr46Ti26Ni28 or the Zr51.7Cu32.3Al9Ni can indeed be used to replace the conventionally used thick tin layer for being the underlayer between the copper layer (the metal substrate) and the tin layer, and then effectively inhibit the interaction occurring in the Cu/Sn interface and the growth of tin whisker by low manufacturing cost way.
Abstract translation: 本发明涉及一种使用薄膜金属玻璃底层的锡晶须缓释材料，其是在金属基底和锡层之间形成的薄膜金属玻璃（TFMG）。 特别地，TFMG可以是Zr46Ti26Ni28底层或Zr51.7Cu32.3Al9Ni底层，能够阻止在铜层（金属基板）和锡层的界面中发生的相互作用，从而进行抑制 锡晶须生长。 此外，提出了各种实验数据，证明了Zr46Ti26Ni28或Zr51.7Cu32.3Al9Ni的TFMG确实可以用于代替常规使用的厚锡层作为铜层（金属基板）和 锡层，然后以低制造成本的方式有效地抑制Cu / Sn界面中发生的相互作用和锡晶须的生长。
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公开(公告)号：US11932931B2
公开(公告)日：2024-03-19
申请号：US17706130
申请日：2022-03-28
Inventor： Pak-Man Yiu , Jhen-De You , Jinn Chu , Sung-Tsun Wang
CPC classification number: C23C14/165 , C22C38/002 , C22C38/44 , C22C38/58 , C23C14/3407 , C23C14/35
Abstract: The present invention relates to a hydrophilic metal thin film, which is formed by stacking a plurality of columnar structures. A plurality of tetrahedral structures is on the surface of the hydrophilic metal film, which is formed on the top of the columnar structures. The width of the tetrahedral structures is 15 nm to 120 nm. The hydrophilic metal thin film comprises: 35 to 95 at % of iron, 5 to 20 at % of chromium. The above-mentioned hydrophilic metal thin film is formed by magnetron sputtering method under the working pressure of argon gas ranging from 6 mTorr to 13 mTorr, and the sputtering time exceeds 20 minutes.
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Patent Agency Ranking
公开(公告)号：US11607533B2
公开(公告)日：2023-03-21
申请号：US16868532
申请日：2020-05-06
Inventor： Jinn Chu , Wen-Che Liao , Pak-Man Yiu
Abstract: A tattoo needle structure is provided. A tattoo needle has a plurality of needle tips, an ink holding space is formed by the arrangement of the needle tips, and a multi-component alloy film is deposited on each needle tip of the tattoo needle by sputtering technology, so that when the tattoo needle is dipped into the tattoo ink, the tattoo ink does not stick to the surface of the multi-component alloy film by the hydrophobic property of the multi-component alloy film, and the tattoo ink is contained in the ink holding space by the cohesive property of the tattoo ink. Thus, when the tattoo needle is dipped into the tattoo ink and the tattoo process is performed, the dyeing area of the skin with the tattoo ink is the cross-sectional area of the ink holding space, thereby achieving the technical effect of improving the contouring resolution of a tattoo.
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公开(公告)号：US09966490B1
公开(公告)日：2018-05-08
申请号：US15613828
申请日：2017-06-05
Inventor： Bohr-Ran Huang , Jinn Chu , You-Syuan Chen , Chia-Hao Chang
IPC: H01L31/108 , H01L31/0296 , H01L31/0392 , H01L31/0352 , H01L31/0224
CPC classification number: H01L31/1085 , G01J1/00 , H01L31/022408 , H01L31/0296 , H01L31/035227 , H01L31/03925 , H01L31/108
Abstract: An ultraviolet sensor comprises a glass substrate, a semiconductor structure, an electrode layer and a thin film metallic glass. The semiconductor structure comprises a semiconductor seed layer formed on the glass substrate and a plurality of semiconductor nanostructures formed on the semiconductor seed layer. The electrode layer is formed between the semiconductor seed layer and the plurality of semiconductor nanostructures. The thin film metallic glass is in contact with the semiconductor structure, wherein an interface between the thin film metallic glass and the semiconductor structure forms a Schottky barrier junction to inhibit dark current and increase signal-to-noise ratio.
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公开(公告)号：US09840798B2
公开(公告)日：2017-12-12
申请号：US14919749
申请日：2015-10-22
Inventor： Jinn Chu , Yusuke Tanatsugu , Chia-Chi Yu , Chia-Lin Li
CPC classification number: D05B85/12 , A61B17/06066 , A61B2017/00526 , A61B2017/0084 , A61M5/329
Abstract: A thin film metallic glass coated needle includes a needle body, a needle head and a thin film metallic glass in amorphous structure and formed on a surface of the needle head and a surface of the needle body to reduce a surface energy and coefficient of friction. The thin film metallic glass is a titanium based comprising 35-45 at % titanium, 5-15 at % zirconium, 32-42 at % copper, 1-11 at % niobium and 2-12 at % cobalt.
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6.发明授权公开(公告)号：US09233521B2
公开(公告)日：2016-01-12
申请号：US14012992
申请日：2013-08-28
Inventor： Jinn Chu , I Made Wahyu Diyatmika , Yee-Wen Yen , Wen-Zhi Chang
CPC classification number: B32B15/01 , B32B15/013 , B32B15/018 , C22C45/10 , Y10T428/12708 , Y10T428/12715 , Y10T428/12722
Abstract: The present invention relates to a tin whisker mitigation material using thin film metallic glass underlayer, which is a thin film metallic glass (TFMG) formed between a metal substrate and a tin layer. Particularly, the TFMG can be a Zr46Ti26Ni28 underlayer or a Zr51.7Cu32.3Al9Ni underlayer, capable of blocking off the interaction occurring in the interface of a copper layer (the metal substrate) and the tin layer, so as to carry out the inhibition of tin whisker growth. Moreover, a variety of experiment data are proposed for proving that the TFMG of the Zr46Ti26Ni28 or the Zr51.7Cu32.3Al9Ni can indeed be used to replace the conventionally used thick tin layer for being the underlayer between the copper layer (the metal substrate) and the tin layer, and then effectively inhibit the interaction occurring in the Cu/Sn interface and the growth of tin whisker by low manufacturing cost way.
Abstract translation: 本发明涉及一种使用薄膜金属玻璃底层的锡晶须缓释材料，其是在金属基底和锡层之间形成的薄膜金属玻璃（TFMG）。 特别地，TFMG可以是Zr46Ti26Ni28底层或Zr51.7Cu32.3Al9Ni底层，能够阻止在铜层（金属基板）和锡层的界面中发生的相互作用，从而进行抑制 锡晶须生长。 此外，提出了各种实验数据，证明了Zr46Ti26Ni28或Zr51.7Cu32.3Al9Ni的TFMG确实可以用于代替常规使用的厚锡层作为铜层（金属基板）和 锡层，然后以低制造成本的方式有效地抑制Cu / Sn界面中发生的相互作用和锡晶须的生长。
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7.发明授权Resistive random access memory using amorphous metallic glass oxide as a storage medium 有权使用无定形金属玻璃氧化物作为存储介质的电阻随机存取存储器公开(公告)号：US09006699B2
公开(公告)日：2015-04-14
申请号：US13850860
申请日：2013-03-26
Inventor： Jinn Chu , Berhanu Tulu Kacha , Wen-Zhi Chang
IPC: H01L45/00
CPC classification number: H01L45/146 , H01L45/04 , H01L45/1233 , H01L45/1625
Abstract: The present invention relates to a resistive random access memory using amorphous metallic glass oxide as a storage medium, comprising a substrate, an insulation layer, a first electrode layer, a resistive memory layer, and a second electrode layer. In the present invention, an amorphous metallic glass oxide layer is mainly used as the resistive memory layer of the resistive random access memory. Therefore, the resistive random access memory with storage medium of amorphous metallic glass oxide thin film having advantages of low operation voltage, low power consumption, and high set/reset resistance ratio are provided without using any thermal annealing processes or forming processes.
Abstract translation: 本发明涉及使用无定形金属玻璃氧化物作为存储介质的电阻随机存取存储器，其包括衬底，绝缘层，第一电极层，电阻存储层和第二电极层。 在本发明中，非晶金属玻璃氧化物层主要用作电阻式随机存取存储器的电阻性存储层。 因此，提供具有低操作电压，低功耗和高设定/复位电阻比优点的非晶金属玻璃氧化物薄膜的存储介质的电阻随机存取存储器，而不使用任何热退火工艺或成形工艺。
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