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    REDUCING MEMS STICTION BY INCREASING SURFACE ROUGHNESS
    4.
    发明申请
    REDUCING MEMS STICTION BY INCREASING SURFACE ROUGHNESS 有权
    通过增加表面粗糙度来减少MEMS的影响

    公开(公告)号：US20160176707A1

    公开(公告)日：2016-06-23

    申请号：US14574784

    申请日：2014-12-18

    Applicant: FREESCALE SEMICONDUCTOR, INC.

    Inventor： Ruben B. Montez ,  Robert F. Steimle

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81B3/001 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81C2201/115

    Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces, such as a travel stop and travel stop region, that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of the travel stop region. This is achieved by depositing a polysilicon layer over a dielectric layer using gaseous hydrochloric acid as one of the reactants. A subsequent etch back is performed to further increase the roughness. The deposition of polysilicon and subsequent etch back may be repeated one or more times in order to obtain the desired roughness. A final polysilicon layer may then be deposited to achieve a desired thickness. This final polysilicon layer is patterned to form the travel stop regions. The rougher surface decreases the surface area available for contact and, in turn, decreases the area through which stiction can be imparted.

    Abstract translation: 提供了一种用于通过减小可以紧密接触的两个表面之间的表面积（例如行驶停止和行驶停止区域）来减小MEMS装置中的静摩擦的机构。 通过增加行驶停止区域的表面粗糙度来实现接触表面积的减小。 这是通过使用气态盐酸作为反应物之一在电介质层上沉积多晶硅层来实现的。 执行随后的回蚀以进一步增加粗糙度。 多晶硅的沉积和随后的回蚀可以重复一次或多次，以获得所需的粗糙度。 然后可以沉积最终的多晶硅层以达到期望的厚度。 对该最终多晶硅层进行图案化以形成行驶停止区域。 较粗糙的表面减小了可用于接触的表面积，并且进而降低了可赋予粘性的面积。

    FILM INDUCED INTERFACE ROUGHENING AND METHOD OF PRODUCING THE SAME
    5.
    发明申请
    FILM INDUCED INTERFACE ROUGHENING AND METHOD OF PRODUCING THE SAME 有权
    电影诱导界面粗化及其生产方法

    公开(公告)号：US20160115016A1

    公开(公告)日：2016-04-28

    申请号：US14667169

    申请日：2015-03-24

    Applicant: INVENSENSE, INC.

    Inventor： Fang Liu ,  Martin Lim ,  Jong Il Shin ,  Jongwoo Shin

    IPC: B81C1/00

    CPC classification number: B81B3/001 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2201/115 ,  B81C2203/0792

    Abstract: Various embodiments provide for a method for roughening a surface of a MEMs device or the surface of a CMOS surface. A first material can be deposited in a thin layer over a surface made of a second material. After heating, the first and second materials, they can partially melt and interdiffuse, forming an alloy. The first material can then be removed and the alloy is removed at the same time. The surface of the second material that is left behind has then been roughened due to the interdiffusion of the first and second materials.

    Abstract translation: 各种实施例提供了用于使MEM器件的表面或CMOS表面的表面粗糙化的方法。 第一材料可以沉积在由第二材料制成的表面上的薄层中。 加热后，第一和第二种材料，它们可以部分熔化和相互扩散，形成合金。 然后可以除去第一种材料并同时去除合金。 然后由于第一和第二材料的相互扩散，留下的第二材料的表面被粗糙化。

    METHODS FOR STICTION REDUCTION IN MEMS SENSORS
    6.
    发明申请
    METHODS FOR STICTION REDUCTION IN MEMS SENSORS 有权
    MEMS传感器中减少注意的方法

    公开(公告)号：US20150353353A1

    公开(公告)日：2015-12-10

    申请号：US14827214

    申请日：2015-08-14

    Applicant: Invensense, Inc.

    Inventor： Cerina Zhang ,  Nim Tea

    IPC: B81C1/00

    CPC classification number: B81C1/00984 ,  B81B3/0008 ,  B81B2207/015 ,  B81C1/00976 ,  B81C2201/115 ,  H01L21/76838 ,  H01L23/48 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of the invention includes reducing stiction of a MEMS device by providing a conductive path for electric charge collected on a bump stop formed on a substrate. The bump stop is formed by depositing and patterning a dielectric material on the substrate, and the conductive path is provided by a conductive layer deposited on the bump stop. The conductive layer can also be roughened to reduce stiction.

    Abstract translation: 本发明的一种方法包括通过为形成在衬底上的凸点块上收集的电荷提供导电路径来减少MEMS器件的静电。 通过在衬底上沉积和图案化介电材料形成凹凸块，并且通过沉积在凸块上的导电层提供导电路径。 导电层也可以被粗糙化以减少粘性。

    SURFACE ROUGHENING TO REDUCE ADHESION IN AN INTEGRATED MEMS DEVICE
    7.
    发明申请
    SURFACE ROUGHENING TO REDUCE ADHESION IN AN INTEGRATED MEMS DEVICE 审中-公开
    表面粗糙化以减少集成MEMS器件中的粘合

    公开(公告)号：US20140264655A1

    公开(公告)日：2014-09-18

    申请号：US14061152

    申请日：2013-10-23

    Applicant: InvenSense, Inc.

    Inventor： Kirt Reed WILLIAMS ,  Kegang HUANG ,  Wencheng XU ,  Jongwoo SHIN ,  Martin LIM

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/001 ,  B81C2201/115

    Abstract: In an integrated MEMS device, moving silicon parts with smooth surfaces can stick together if they come into contact. By roughening at least one smooth surface, the effective area of contact, and therefore surface adhesion energy, is reduced and hence the sticking force is reduced. The roughening of a surface can be provided by etching the smooth surfaces in gas, plasma, or liquid with locally non-uniform etch rate. Various etch chemistries and conditions lead to various surface roughness.

    Abstract translation: 在集成的MEMS器件中，移动具有光滑表面的硅部件如果接触则可以粘在一起。 通过使至少一个光滑表面粗糙化，有效的接触面积以及因此的表面附着能减少，因此粘附力降低。 可以通过以局部不均匀蚀刻速率蚀刻气体，等离子体或液体中的光滑表面来提供表面的粗糙化。 各种蚀刻化学和条件导致各种表面粗糙度。

    Surface roughening process
    8.
    发明授权
    Surface roughening process 有权
    表面粗糙化处理

    公开(公告)号：US08268703B2

    公开(公告)日：2012-09-18

    申请号：US11827709

    申请日：2007-07-13

    Applicant: Bernard Aspar ,  Chrystelle Lagahe Blanchard ,  Nicolas Sousbie

    Inventor： Bernard Aspar ,  Chrystelle Lagahe Blanchard ,  Nicolas Sousbie

    IPC: H01L21/30

    CPC classification number: B81C1/00952 ,  B81B3/001 ,  B81C2201/115

    Abstract: A process of forming a rough interface in a semiconductor substrate. The process includes the steps of depositing a material on a surface of the substrate, forming a zone of irregularities in the material, and forming a rough interface in the semiconductor substrate by a thermal oxidation of the material and a part of the substrate. Additionally, the surface of the oxidized material may be prepared and the surface may be assembled with a second substrate.

    Abstract translation: 在半导体衬底中形成粗糙界面的工艺。 该方法包括以下步骤：在衬底的表面上沉积材料，在材料中形成不规则区域，并通过材料和衬底的一部分的热氧化在半导体衬底中形成粗糙界面。 此外，可以制备氧化材料的表面，并且表面可以与第二衬底组装。

    MICROMECHANICAL TUNABLE FABRY-PEROT INTERFEROMETER, AN INTERMEDIATE PRODUCT, AND A METHOD FOR PRODUCING THE SAME
    9.
    发明申请
    MICROMECHANICAL TUNABLE FABRY-PEROT INTERFEROMETER, AN INTERMEDIATE PRODUCT, AND A METHOD FOR PRODUCING THE SAME 有权
    微生物耐压织物干燥仪，中间产品及其生产方法

    公开(公告)号：US20120050751A1

    公开(公告)日：2012-03-01

    申请号：US13319337

    申请日：2010-05-28

    Applicant: Martti Blomberg

    Inventor： Martti Blomberg

    IPC: G01B9/02 ,  H01L21/02

    CPC classification number: G02B26/001 ,  B81B3/0013 ,  B81B2201/042 ,  B81C2201/115 ,  G01J3/26

    Abstract: The invention relates to controllable Fabry-Perot interferometers which are produced with micromechanical (MEMS) technology. Producing prior art interferometers includes a risk of deterioration of mirrors during the etching of the sacrificial layer (123). According to the solution according to the invention at least one layer (103, 105, 114, 116) of the mirrors is made of silicon-rich silicon nitride. In the inventive Fabry-Perot interferometer it is possible to avoid or reduce using silicon oxide in the mirror layers whereby the risk of deterioration of the mirrors is reduced. It is also possible to use mirror surfaces with higher roughness, whereby the risk of the mirrors sticking to each other is reduced.

    Abstract translation: 本发明涉及用微机械（MEMS）技术制造的可控法布里 - 珀罗干涉仪。 生产现有技术的干涉仪包括在蚀刻牺牲层（123）期间反射镜劣化的风险。 根据本发明的解决方案，反射镜的至少一层（103,105,114,116）由富硅的氮化硅制成。 在本发明的法布里 - 珀罗干涉仪中，可以避免或减少使用反射镜层中的氧化硅，从而降低反射镜劣化的风险。 还可以使用具有较高粗糙度的镜面，从而降低了彼此粘附的镜子的风险。

    Micromechanical component and manufacturing method
    10.
    发明授权
    Micromechanical component and manufacturing method 有权
    微机械部件及制造方法

    公开(公告)号：US07919346B2

    公开(公告)日：2011-04-05

    申请号：US12090566

    申请日：2006-11-29

    Applicant: Arnd Kaelberer ,  Jens Frey

    Inventor： Arnd Kaelberer ,  Jens Frey

    IPC: H01L21/00

    CPC classification number: B81C1/00984 ,  B81B3/001 ,  B81C2201/115 ,  Y10T428/24355

    Abstract: A micromechanical component has a substrate, a first intermediate layer which is situated thereupon, and a first layer which is situated thereupon and is structured down to the first intermediate layer. A second intermediate layer is situated above the first layer. A second layer is situated on the former, at least one movable micromechanical structure being structured into the second layer. The second intermediate layer is removed in a sacrificial zone beneath the movable micromechanical structure and the first intermediate layer is partially removed in zones beneath the first layer. The movable micromechanical structure is provided with at least one stop surface on a bottom face, this stop surface being contactable with a zone of the first layer which is supported by the first intermediate layer by deflection of the movable micromechanical structure. A method for producing such a micromechanical component is also described.

    Abstract translation: 微机械部件具有衬底，位于其上的第一中间层和位于其上并且被构造成第一中间层的第一层。 第二中间层位于第一层上方。 第二层位于前者上，至少一个可移动微机械结构被构造成第二层。 第二中间层在可移动微机械结构下面的牺牲区域中被去除，并且第一中间层在第一层下面的区域中被部分地去除。 可移动微机械结构在底面上设置有至少一个止动表面，该止动表面可通过可移动微机械结构的偏转而与第一层的区域接触，该区域由第一中间层支撑。 还描述了一种用于制造这种微机械部件的方法。

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