公开(公告)号：US20060062286A1

公开(公告)日：2006-03-23

申请号：US11128795

申请日：2005-05-13

Applicant: Kwang-Il Park ,  Seong-Jin Jang ,  Ho-Young Song

Inventor： Kwang-Il Park ,  Seong-Jin Jang ,  Ho-Young Song

IPC: H04B1/38

CPC classification number: G11C7/1072 ,  G11C29/50 ,  G11C29/50012 ,  G11C2207/2254

Abstract: For data training in a memory device, a selecting unit selects a subset of data bit patterns received from a controlling device. In addition, a storing unit comprised of memory cells of the memory device stores the selected subset of data bit patterns. Such stored data bit patterns are then sent back to the controlling device that determines the level of data skew. Such data training more accurately reflects the actual paths and environments of the transmitted data bits.

Abstract translation: 对于存储器件中的数据训练，选择单元选择从控制装置接收的数据位模式的子集。 此外，由存储器件的存储器单元组成的存储单元存储所选择的数据位模式子集。 然后将这种存储的数据位模式发送回确定数据偏移水平的控制设备。 这种数据训练更准确地反映了传输数据位的实际路径和环境。

公开(公告)号：US20050267092A1

公开(公告)日：2005-12-01

申请号：US10505724

申请日：2002-02-28

Applicant: Chang-Seok Lee ,  Geun-Tae Kim ,  Yong-Jin Jang ,  Eun-Jung Ryu ,  Yang-Rae Cho ,  Hyung-Yeul Joo ,  Jeong-Eun Shin ,  Sun-Hwa Lee ,  Ki-Dong Koo

Inventor： Chang-Seok Lee ,  Geun-Tae Kim ,  Yong-Jin Jang ,  Eun-Jung Ryu ,  Yang-Rae Cho ,  Hyung-Yeul Joo ,  Jeong-Eun Shin ,  Sun-Hwa Lee ,  Ki-Dong Koo

IPC: C07D501/36 ,  A61K31/546 ,  A61P31/04 ,  C07D501/00 ,  C07D501/24 ,  A61K31/545 ,  C07D501/14

CPC classification number: C07D501/00

Abstract: The present invention relates to a novel cephalosporin compound, and pharmaceutically acceptable non-toxic salt, physiologically hydrolysable ester, hydrate, solvate or isomer thereof, to a pharmaceutical composition comprising the compound, and to a process for preparing the compound.

Abstract translation: 本发明涉及一种新颖的头孢菌素化合物及其药学上可接受的无毒盐，生理上可水解的酯，水合物，溶剂化物或异构体，其包含该化合物的药物组合物，以及制备该化合物的方法。

公开(公告)号：US20050255847A1

公开(公告)日：2005-11-17

申请号：US11130250

申请日：2005-05-17

Applicant: Youn-hee Han ,  Hee-jin Jang ,  Choong-hun Lee

Inventor： Youn-hee Han ,  Hee-jin Jang ,  Choong-hun Lee

IPC: H04L12/28 ,  H04W36/00 ,  H04W36/08 ,  H04W36/30 ,  H04W36/36 ,  H04W80/04 ,  H04W84/12 ,  H04W88/08 ,  H04Q7/20

CPC classification number: H04W36/30

Abstract: A fast handover method optimized for IEEE 802.11 networks. In a wireless local area system including a mobile terminal and at least two wireless access points (APs) that communicate with the mobile terminal over a unique radio channel, the fast handover method includes receiving a beacon frame signal from the serving AP and the neighbor APs of the mobile terminal; generating a first signal to determine a state of each of the neighbor APs based on the beacon frame signal received from each of the neighbor APs; comparing the first signal with predefined thresholds, classifying the neighbor APs into a detected AP, a candidate AP, and a target AP according to a result of the comparison, and storing the classification result in a neighbor AP list; and selecting an AP for the handover based on the classification result in the neighbor AP list.

Abstract translation: 针对IEEE 802.11网络优化的快速切换方法。 在包括移动终端的无线局域系统和通过唯一无线电信道与移动终端进行通信的至少两个无线接入点（AP）中，快速切换方法包括从服务AP接收信标帧信号和邻居AP 的移动终端; 基于从每个相邻AP接收到的信标帧信号，生成第一信号以确定每个相邻AP的状态; 将所述第一信号与预定阈值进行比较，根据所述比较结果将所述相邻AP分类为检测到的AP，候选AP和目标AP，并将所述分类结果存储在相邻AP列表中; 并根据邻居AP列表中的分类结果选择用于切换的AP。

公开(公告)号：US20050152209A1

公开(公告)日：2005-07-14

申请号：US11011549

申请日：2004-12-14

Applicant: Won-hwa Shin ,  Seong-jin Jang ,  Sang-joon Hwang

Inventor： Won-hwa Shin ,  Seong-jin Jang ,  Sang-joon Hwang

IPC: G11C7/10 ,  G11C8/00 ,  G11C11/4093

CPC classification number: G11C7/1078 ,  G11C7/1066 ,  G11C7/1072 ,  G11C7/1087 ,  G11C7/109 ,  G11C11/4093

Abstract: A synchronous semiconductor memory device includes a data input buffer and a data strobe input buffer. The data strobe input buffer includes an input buffer circuit and a detection circuit. The input buffer circuit is configured to be enabled based on an active signal, and to compare a data strobe signal with a first reference voltage to generate an internal data strobe signal. The detection circuit is configured to be enabled based on the active signal, and to compare the data strobe signal with a second reference voltage to generate a detection signal for enabling the data input buffer.

Abstract translation: 同步半导体存储器件包括数据输入缓冲器和数据选通输入缓冲器。 数据选通输入缓冲器包括输入缓冲电路和检测电路。 输入缓冲器电路被配置为基于有效信号使能，并且将数据选通信号与第一参考电压进行比较以产生内部数据选通信号。 检测电路被配置为基于有效信号使能，并且将数据选通信号与第二参考电压进行比较，以产生用于启用数据输入缓冲器的检测信号。

公开(公告)号：US06894946B2

公开(公告)日：2005-05-17

申请号：US10377374

申请日：2003-02-28

Applicant: Seong-Jin Jang

Inventor： Seong-Jin Jang

IPC: G11C7/20 ,  G11C7/22 ,  G11C11/4072 ,  G11C11/4076 ,  G11C8/00 ,  G06F12/00 ,  G11C11/00 ,  H03B19/00 ,  H03L7/00

CPC classification number: G11C29/028 ,  G11C7/20 ,  G11C7/22 ,  G11C7/222 ,  G11C11/4072 ,  G11C11/4076 ,  G11C2207/104 ,  G11C2207/2254

Abstract: A memory system includes a memory device that includes an active termination circuit. The memory system further includes a controller circuit that includes a frequency control circuit that is configured to modulate a system clock between a first frequency value and a second frequency value, greater than the first frequency value, responsive to a control signal. The controller circuit is further configured to determine an active termination value for the active termination circuit responsive to the system clock at the first frequency value, and to apply commands to the memory device responsive to the system clock at the second frequency value.

Abstract translation: 存储器系统包括包括有源终端电路的存储器件。 存储器系统还包括控制器电路，其包括频率控制电路，其被配置为响应于控制信号，调制大于第一频率值的第一频率值和第二频率值之间的系统时钟。 控制器电路还被配置为响应于处于第一频率值的系统时钟来确定有效终端电路的有效终止值，并且响应于系统时钟以第二频率值将命令应用于存储器件。

公开(公告)号：US20050029611A1

公开(公告)日：2005-02-10

申请号：US10732320

申请日：2003-12-09

Applicant: Jin Jang ,  Ji Hur ,  Hyun Nam

Inventor： Jin Jang ,  Ji Hur ,  Hyun Nam

IPC: H01L29/786 ,  H01L27/146 ,  H01L31/0376 ,  H01L31/10 ,  H01L31/0232

CPC classification number: H01L31/0376 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14692 ,  Y02E10/50

Abstract: The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.

Abstract translation: 本发明涉及一种图像传感器，包括用作用于X射线摄影装置的图像传感器，指纹识别装置，扫描仪等的非晶硅薄膜晶体管光学传感器及其制造方法 图像传感器。 由于根据本发明的薄膜晶体管光学传感器通过在沟道区域中设置偏移区域而具有高电阻硅区域，所以即使在高电压下，光学传感器的暗漏电流也保持在低电平。 因此，可以对根据本发明的薄膜晶体管光学传感器施加高电压，使得图像传感器可以对弱光敏感。 此外，由于图像传感器中的存储电容形成为双重结构，所以图像传感器具有高的电容值。 此外，由于下部公共电极与上部公共电极电连接，所以图像传感器具有稳定的结构。

公开(公告)号：US20040266189A1

公开(公告)日：2004-12-30

申请号：US10899014

申请日：2004-07-27

Applicant: LG LCD Inc. ,  Jin Jang

Inventor： Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh ,  Woo-Sung Shon ,  Seong-Jin Park

IPC: H01L021/461 ,  H01L021/00 ,  H01L021/84 ,  H01L021/302

CPC classification number: H01L21/02672 ,  C30B1/023 ,  C30B29/06 ,  H01J37/32009 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  Y10T117/10 ,  Y10T117/1008

Abstract: The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.

公开(公告)号：US06648711B1

公开(公告)日：2003-11-18

申请号：US09592257

申请日：2000-06-12

Applicant: Jin Jang ,  Suk-jae Chung ,  Sung-hoon Lim ,  Jae-eun Yoo

Inventor： Jin Jang ,  Suk-jae Chung ,  Sung-hoon Lim ,  Jae-eun Yoo

IPC: H01J904

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J31/127 ,  Y10S977/721 ,  Y10S977/723 ,  Y10S977/742 ,  Y10S977/843 ,  Y10S977/844 ,  Y10S977/888

Abstract: A field emitter having a high current density even at a low voltage using a carbon nanotube film, a method of manufacturing the same, and a field emission display device having the field emitter, are provided, The field emitter includes an insulating substrate. a thin film transistor formed on the insulating substrate, the thin film transistor having a semiconductor layer, a source electrode, a drain electrode and a gate electrode, and an electron emitting unit formed of a carbon nanotube film on the drain electrode of the thin film transistor The thin film transistor can be a coplanar-type transistor, a stagger-type transistor, or an inverse stagger-type transistor. The surface of a portion of the drain electrode, which contacts the carbon nanotube film, contains catalytic metal which is transition metal such as nickel or cobalt. Alternatively, the drain electrode itself can be formed of catalytic metal for carbon nanotube growth.

Abstract translation: 提供了即使在使用碳纳米管膜的低电压下也具有高电流密度的场致发射体，其制造方法以及具有该场致发射体的场致发射显示装置。场发射器包括绝缘基板。 形成在所述绝缘基板上的薄膜晶体管，所述薄膜晶体管具有半导体层，源极，漏极和栅电极，以及由所述薄膜的漏电极上的碳纳米管膜形成的电子发射单元 晶体管薄膜晶体管可以是共面型晶体管，交错型晶体管或反交错型晶体管。 与碳纳米管膜接触的漏电极的一部分的表面含有催化金属，其为镍或钴等过渡金属。 或者，漏电极本身可以由用于碳纳米管生长的催化金属形成。

公开(公告)号：US06451637B1

公开(公告)日：2002-09-17

申请号：US09493201

申请日：2000-01-28

Applicant: Jin Jang ,  Sung-Hoon Kim

Inventor： Jin Jang ,  Sung-Hoon Kim

IPC: H01L2100

CPC classification number: C30B1/023 ,  C30B29/06

Abstract: The present invention related to a method of forming a polycrystalline silicon film which forms a polysilicon film by crystallizing silicon by means of carrying out plasma exposure and applying an electric field thereon. The present invention includes the steps of forming a metal plasma exposure layer on a substrate wherein the metal plasma exposure layer works as a catalyst for metal induced crystallization, and depositing amorphous silicon on the substrate on which the plasma exposure layer is formed while an electric field is applied thereon. The present invention enables to crystallize the whole film in such a short annealing time less than 10 minutes by forming a metal layer under a silicon layer by plasma particle exposure and, successively, by crystallizing silicon which is being formed under 520° C. And, the present invention reduces metal contamination in the crystallized silicon film as the amount of metal is easy to be controlled by plasma exposure time. Moreover, the present invention enables to form a polysilicon film several &mgr;m thick as it is easy to form polysilicon of which thickness does not matter.

Abstract translation: 本发明涉及通过进行等离子体曝光和在其上施加电场而使硅结晶而形成多晶硅膜的多晶硅膜的形成方法。 本发明包括在基板上形成金属等离子体曝光层的步骤，其中金属等离子体曝光层用作金属诱导结晶的催化剂，并在其上形成等离子体曝光层的基板上沉积非晶硅，同时电场 施加在其上。 本发明能够通过在等离子体颗粒曝光下在硅层下形成金属层，并且通过在520℃下形成硅来结晶在短的退火时间，使其在短于10分钟的短时间内使整个膜结晶。 本发明通过等离子体曝光时间容易地控制金属的量来减少结晶硅膜中的金属污染。 此外，本发明能够形成几个厚度的多晶硅膜，因为容易形成厚度无关的多晶硅。

公开(公告)号：US06326226B1

公开(公告)日：2001-12-04

申请号：US09115498

申请日：1998-07-14

Applicant: Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh

Inventor： Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh

IPC: H01L2120

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

Abstract: A method of crystallizing an amorphous film includes the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a metal layer; and crystallizing the amorphous film by forming an electric field in the amorphous film and the metal layer, while simultaneously subjecting the amorphous film and the metal layer to a thermal treatment, thereby crystallizing the amorphous film.

Abstract translation: 结晶非晶膜的方法包括以下步骤：形成能够在基板上结晶的非晶膜，所述非晶膜与金属层接触; 并且通过在非晶膜和金属层中形成电场而结晶非晶膜，同时对非晶膜和金属层进行热处理，从而使非晶膜结晶。