公开(公告)号：US09472757B2

公开(公告)日：2016-10-18

申请号：US14334566

申请日：2014-07-17

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Jan Willem Maes ,  Tom Blomberg ,  Marko Tuominen ,  Suvi Haukka ,  Robin Roelofs ,  Jacob Woodruff

IPC: H01L45/00 ,  H01L21/02 ,  H01L39/24

CPC classification number: H01L45/146 ,  H01L21/02175 ,  H01L21/0228 ,  H01L39/249 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/14 ,  H01L45/1616 ,  H01L45/1641

Abstract: The disclosed technology generally relates to the field of semiconductor processing and more particularly to resistive random access memory and methods for manufacturing such memory. In one aspect, a method of fabricating a memory cell includes providing a substrate and providing a first electrode on the substrate. The method additionally includes depositing, via atomic layer deposition, a resistive switching material on the first electrode, wherein the resistive switching material comprises an oxide comprising a pnictogen chosen from the group consisting of As, Bi, Sb, and P. The resistive switching material may be doped, e.g., with Sb or an antimony-metal alloy. A second electrode may be formed over and in contact with the resistive switching material.

Abstract translation: 所公开的技术通常涉及半导体处理领域，更具体地涉及电阻随机存取存储器以及用于制造这种存储器的方法。 一方面，一种制造存储单元的方法包括提供衬底并在衬底上提供第一电极。 该方法还包括通过原子层沉积沉积第一电极上的电阻式开关材料，其中电阻开关材料包括一种氧化物，该氧化物包括选自由As，Bi，Sb和P组成的组的pnictogen。电阻式开关材料 可以掺杂，例如用Sb或锑 - 金属合金。 第二电极可以形成在电阻开关材料之上并与电阻开关材料接触。

公开(公告)号：US20160240373A1

公开(公告)日：2016-08-18

申请号：US14621174

申请日：2015-02-12

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael Givens ,  Qi Xie ,  Jan Willem Maes ,  Bert Jongbloed ,  Radko G. Bankras ,  Theodorus G.M. Oosterlaken ,  Dieter Pierreux ,  Werner Knaepen ,  Harald B. Profijt ,  Cornelius A. van der Jeugd

IPC: H01L21/02

CPC classification number: H01L21/02236 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/02238

Abstract: In some embodiments, an oxide layer is grown on a semiconductor substrate by oxidizing the semiconductor substrate by exposure to hydrogen peroxide at a process temperature of about 500° C. or less. The exposure to the hydrogen peroxide may continue until the oxide layer grows by a thickness of about 1 Å or more. Where the substrate is a germanium substrate, while oxidation using H2O has been found to form germanium oxide with densities of about 4.25 g/cm3, oxidation according to some embodiments can form an oxide layer with a density of about 6 g/cm3 or more (for example, about 6.27 g/cm3). In some embodiments, another layer of material is deposited directly on the oxide layer. For example, a dielectric layer may be deposited directly on the oxide layer.

Abstract translation: 在一些实施例中，通过在约500℃或更低的工艺温度下暴露于过氧化氢来氧化半导体衬底，在半导体衬底上生长氧化物层。 暴露于过氧化氢可持续到氧化层生长约1埃以上的厚度。 当衬底是锗衬底时，虽然已经发现使用H 2 O的氧化形成密度为4.25g / cm 3的氧化锗，但是根据一些实施方案的氧化可以形成密度为约6g / cm 3或更高的氧化物层 例如约6.27g / cm 3）。 在一些实施例中，另一层材料直接沉积在氧化物层上。 例如，介电层可以直接沉积在氧化物层上。

公开(公告)号：US09245742B2

公开(公告)日：2016-01-26

申请号：US14133509

申请日：2013-12-18

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Fu Tang ,  Michael Givens ,  Jan Willem Maes ,  Qi Xie

IPC: H01L21/31 ,  H01L21/02

CPC classification number: H01L21/02175 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02334 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02557 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264 ,  H01L29/2203 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/7786 ,  H01L29/78

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

Abstract translation: 在一些方面，提供了形成金属硫化物薄膜的方法。 根据一些方法，金属硫化物薄膜在循环过程中在反应空间中沉积在基底上，其中至少一个循环包括交替地和顺序地接触基底与第一气相金属反应物和第二气相硫 反应物。 在一些方面，提供了在衬底表面上形成三维结构的方法。 在一些实施方案中，该方法包括在基材表面上形成金属硫化物薄膜，并在金属硫化物薄膜上形成覆盖层。 衬底表面可以包括高迁移率通道。

公开(公告)号：US20150021540A1

公开(公告)日：2015-01-22

申请号：US14334566

申请日：2014-07-17

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Jan Willem Maes ,  Tom Blomberg ,  Marko Tuominen ,  Suvi Haukka ,  Robin Roelofs ,  Jacob Woodruff

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L21/02175 ,  H01L21/0228 ,  H01L39/249 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/14 ,  H01L45/1616 ,  H01L45/1641

Abstract: The disclosed technology generally relates to the field of semiconductor processing and more particularly to resistive random access memory and methods for manufacturing such memory. In one aspect, a method of fabricating a memory cell includes providing a substrate and providing a first electrode on the substrate. The method additionally includes depositing, via atomic layer deposition, a resistive switching material on the first electrode, wherein the resistive switching material comprises an oxide comprising a pnictogen chosen from the group consisting of As, Bi, Sb, and P. The resistive switching material may be doped, e.g., with Sb or an antimony-metal alloy. A second electrode may be formed over and in contact with the resistive switching material.

Abstract translation: 所公开的技术通常涉及半导体处理领域，更具体地涉及电阻随机存取存储器以及用于制造这种存储器的方法。 一方面，一种制造存储单元的方法包括提供衬底并在衬底上提供第一电极。 该方法还包括通过原子层沉积沉积第一电极上的电阻式开关材料，其中电阻开关材料包括一种氧化物，该氧化物包括选自由As，Bi，Sb和P组成的组的pnictogen。电阻式开关材料 可以掺杂，例如用Sb或锑 - 金属合金。 第二电极可以形成在电阻开关材料之上并与电阻开关材料接触。

公开(公告)号：US12266524B2

公开(公告)日：2025-04-01

申请号：US17345458

申请日：2021-06-11

Applicant: ASM IP Holding B.V.

Inventor： Lucas Petersen Barbosa Lima ,  Rami Khazaka ,  Qi Xie

IPC: H01L21/02 ,  C30B25/04 ,  C30B25/16 ,  C30B25/18 ,  C30B29/52 ,  C30B33/12 ,  H01L29/167

Abstract: Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

公开(公告)号：US20240429055A1

公开(公告)日：2024-12-26

申请号：US18822710

申请日：2024-09-03

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/768

Abstract: There is provided a method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.

公开(公告)号：US12087586B2

公开(公告)日：2024-09-10

申请号：US17227621

申请日：2021-04-12

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Eric James Shero ,  Charles Dezelah ,  Giuseppe Alessio Verni ,  Petri Raisanen

IPC: H01L21/28 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01L29/49

CPC classification number: H01L21/28088 ,  C23C16/34 ,  C23C16/45544 ,  C23C16/52 ,  H01L29/4966

Abstract: Methods and systems for depositing chromium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process, depositing a chromium nitride layer onto a surface of the substrate. The deposition process can include providing a chromium precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The deposition process may be a thermal cyclical deposition process.

公开(公告)号：US11887857B2

公开(公告)日：2024-01-30

申请号：US17235990

申请日：2021-04-21

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Bert Jongbloed ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02 ,  C23C16/34 ,  H01L21/3205 ,  H10B43/35 ,  H01L23/535 ,  H01L29/786 ,  H01L49/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/775 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/28568 ,  C23C16/34 ,  C23C16/45544 ,  C23C16/52 ,  H01L21/02697 ,  H01L21/28556 ,  H01L21/32051 ,  H10B43/35 ,  H01L23/535 ,  H01L28/60 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/775 ,  H01L29/78696 ,  H10B41/27 ,  H10B43/27

Abstract: Disclosed are methods and systems for depositing layers comprising vanadium, nitrogen, and element selected from the list consisting of molybdenum, tantalum, niobium, aluminum, and silicon. The layers are deposited onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US11873557B2

公开(公告)日：2024-01-16

申请号：US17504839

申请日：2021-10-19

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Eric James Shero ,  Qi Xie ,  Giuseppe Alessio Verni ,  Petro Deminskyi

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45534 ,  C23C16/45553 ,  C23C16/52

Abstract: The manufacture of semiconductor devices may include methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate.

公开(公告)号：US11798999B2

公开(公告)日：2023-10-24

申请号：US17873885

申请日：2022-07-26

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Peng-Fu Hsu ,  Michael Eugene Givens ,  Qi Xie

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/40 ,  H01L29/51 ,  H01L29/78 ,  H01L29/161

CPC classification number: H01L29/408 ,  C23C16/401 ,  C23C16/403 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02145 ,  H01L21/02205 ,  H01L21/28158 ,  H01L29/161 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66477 ,  H01L29/78

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.