公开(公告)号：US20230420432A1

公开(公告)日：2023-12-28

申请号：US17846173

申请日：2022-06-22

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Ravindranath Vithal Mahajan ,  Debendra Mallik ,  Omkar G. Karhade ,  Wilfred Gomes ,  Pushkar Sharad Ranade ,  Abhishek A. Sharma ,  Tahir Ghani ,  Anand S. Murthy ,  Nitin A. Deshpande

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/31 ,  G02B6/42

CPC classification number: H01L25/167 ,  H01L24/08 ,  H01L23/3107 ,  H01L24/80 ,  H01L24/94 ,  G02B6/4298 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Embodiments of an integrated circuit (IC) die comprise a first region having a first surface and a second surface, the first surface being orthogonal to the second surface; a second region comprising a semiconductor material, the second region attached to the first region along a first planar interface that is orthogonal to the first surface and parallel to the second surface; and a third region comprising optical structures of a photonic IC, the third region attached to the second region along a second planar interface that is parallel to the first planar interface. The first region comprises: a plurality of layers of conductive traces in a dielectric material, each layer of the conductive traces being parallel to the second surface such that the conductive traces are orthogonal to the first surface; and bond-pads on the first surface, the bond-pads comprising portions of respective conductive traces exposed on the first surface.

公开(公告)号：US20230420411A1

公开(公告)日：2023-12-28

申请号：US17846153

申请日：2022-06-22

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Ravindranath Vithal Mahajan ,  Debendra Mallik ,  Omkar G. Karhade ,  Wilfred Gomes ,  Pushkar Sharad Ranade ,  Abhishek A. Sharma ,  Tahir Ghani ,  Anand S. Murthy ,  Nitin A. Deshpande ,  Joshua Fryman ,  Stephen Morein ,  Matthew Adiletta

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/18 ,  H01L25/00

CPC classification number: H01L25/0652 ,  H01L24/08 ,  H01L25/18 ,  H01L24/06 ,  H01L25/50 ,  H01L2224/80379 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/059 ,  H01L24/05 ,  H01L2224/05647 ,  H01L2224/05567 ,  H01L2224/06102 ,  H01L2224/06183 ,  H01L2224/08146 ,  H01L2224/08137 ,  H01L2224/0557 ,  H01L24/80 ,  H01L24/13 ,  H01L2224/13025 ,  H01L24/16 ,  H01L2224/16225 ,  H01L2224/80006

Abstract: Embodiments of an integrated circuit (IC) die comprise: a metallization stack including a dielectric material, a plurality of layers of conductive traces in the dielectric material and conductive vias through the dielectric material; and a substrate attached to the metallization stack along a planar interface. The metallization stack comprises bond-pads on a first surface, a second surface, a third surface, a fourth surface, and a fifth surface. The first surface is parallel to the planar interface between the metallization stack and the substrate, the second surface is parallel to the third surface and orthogonal to the first surface, and the fourth surface is parallel to the fifth surface and orthogonal to the first surface and the second surface.

公开(公告)号：US11764080B2

公开(公告)日：2023-09-19

申请号：US17715923

申请日：2022-04-07

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Debendra Mallik ,  Bassam M. Ziadeh ,  Yoshihiro Tomita

IPC: H01L21/56 ,  H01L25/00 ,  H01L25/065 ,  H01L23/00 ,  H01L25/18 ,  H01L23/16

CPC classification number: H01L21/563 ,  H01L23/16 ,  H01L23/562 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/131 ,  H01L2224/13082 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48228 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81007 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/81211 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/1434 ,  H01L2924/1579 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/2064 ,  H01L2924/3511 ,  H01L2224/97 ,  H01L2224/81 ,  H01L2224/97 ,  H01L2224/83 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/73204 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2924/00012

Abstract: Embodiments of the invention include device packages and methods of forming such packages. In an embodiment, the method of forming a device package may comprise forming a reinforcement layer over a substrate. One or more openings may be formed through the reinforcement layer. In an embodiment, a device die may be placed into one of the openings. The device die may be bonded to the substrate by reflowing one or more solder bumps positioned between the device die and the substrate. Embodiments of the invention may include a molded reinforcement layer. Alternative embodiments include a reinforcement layer that is adhered to the surface of the substrate with an adhesive layer.

公开(公告)号：US20230207545A1

公开(公告)日：2023-06-29

申请号：US17561832

申请日：2021-12-24

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Omkar Karhade ,  Nitin Deshpande

IPC: H01L25/18 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48

CPC classification number: H01L25/18 ,  H01L24/13 ,  H01L23/3185 ,  H01L23/481 ,  H01L2224/13147 ,  H01L2924/014

Abstract: An integrated circuit (IC) package comprises a first IC die comprising a first hardware interface at a first side of the first die, and one or more first conductive contacts at the first side. A second IC die coupled to the first die comprises a second hardware interface at a second side of the second die. Second conductive contacts of the first hardware interface are each in direct contact with a respective one of third conductive contacts of the second hardware interface. A third hardware interface comprises: one or more interconnect structures, each coupled to a respective one of the one or more first conductive contacts and each comprising a fourth conductive contact, and fifth conductive contacts at a third side of the second die, wherein the one or more interconnect structures are each to electrically couple the third hardware interface to the first die.

公开(公告)号：US20230207471A1

公开(公告)日：2023-06-29

申请号：US17560609

申请日：2021-12-23

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Omkar Karhade ,  Nitin Deshpande

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/48 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L23/5383 ,  H01L25/0655 ,  H01L23/481 ,  H01L24/08 ,  H01L25/50 ,  H01L24/80 ,  H01L2224/08235 ,  H01L2224/80815 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/16225

Abstract: Multi-die composite packages including directly bonded IC die and at least one electro-thermo-mechanical die (ETMD). An ETMD is distinguished from an active IC die as an ETMD is a passive die lacking any semiconductor devices, such as transistors. In exemplary embodiments, an ETMD includes a substrate, which may be a crystalline semiconductor material, for example, and one or more through substrate vias (TSVs) passing through a thickness of the substrate. The TSVs may enable a ETMD to electrically interconnect an (active) IC die of a composite package to another IC die of the package or to a package host.

公开(公告)号：US20230197637A1

公开(公告)日：2023-06-22

申请号：US17554471

申请日：2021-12-17

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Mohammad Enamul Kabir ,  Nitin Deshpande ,  Omkar Karhade ,  Arnab Sarkar ,  Sairam Agraharam ,  Christopher Pelto ,  Gwang-Soo Kim ,  Ravindranath Mahajan

IPC: H01L23/00 ,  H01L25/065

CPC classification number: H01L23/564 ,  H01L25/0655 ,  H01L21/447

Abstract: Stacked die assemblies having a moisture sealant layer according to embodiments are described herein. A microelectronic package structure having a first die with a second and an adjacent third die on the first die. Each of the second and third die comprise hybrid bonding interfaces with the first die. A first layer is on a region of the first die adjacent sidewalls of the second and the third dies, and adjacent an edge portion of the first die. The first layer comprises a diffusion barrier material A second layer is over the first layer, the second layer, wherein a top surface of the second layer is substantially coplanar with the top surfaces of the second and third dies. The first layer provides a hermetic moisture sealant layer for stacked die package structures.

公开(公告)号：US20230197546A1

公开(公告)日：2023-06-22

申请号：US17557925

申请日：2021-12-21

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Omkar Karhade ,  Sairam Agraharam ,  Nitin Deshpande

IPC: H01L23/31 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065 ,  H01L21/56

CPC classification number: H01L23/3114 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/16 ,  H01L25/0657 ,  H01L21/56 ,  H01L2224/32145 ,  H01L2225/06517

Abstract: Integrated circuit assemblies can be fabricated on a wafer scale, wherein a base template, having a plurality of openings, may cover a base substrate, such as a die wafer, wherein the base substrate has a plurality of first integrated circuit devices formed therein and wherein at least one second integrated circuit device is electrically attached to a corresponding first integrated circuit device through a respective opening in the base template. Thus, when the base substrate and base template are singulated into individual integrated circuit assemblies, the individual integrated circuit assemblies will each have a first integrated circuit that is edge aligned to a singulated portion of the base template. The singulated portion of the base template can provide an improved thermal path, mechanical strength, and/or electrical paths for the individual integrated circuit assemblies.

公开(公告)号：US11545407B2

公开(公告)日：2023-01-03

申请号：US16244748

申请日：2019-01-10

Applicant: Intel Corporation

Inventor： Kumar Abhishek Singh ,  Omkar Karhade ,  Nitin Deshpande ,  Mitul Modi ,  Edvin Cetegen ,  Aastha Uppal ,  Debendra Mallik ,  Sanka Ganesan ,  Yiqun Bai ,  Jan Krajniak ,  Manish Dubey ,  Ravindranath Mahajan ,  Ram Viswanath ,  James C. Matayabas, Jr.

IPC: H01L23/10 ,  H01L23/34 ,  H01L23/31 ,  H01L23/00 ,  H01L23/48 ,  H01L21/56 ,  H01L21/48

Abstract: An integrated circuit package may be formed having at least one heat dissipation structure within the integrated circuit package itself. In one embodiment, the integrated circuit package may include a substrate; at least one integrated circuit device, wherein the at least one integrated circuit device is electrically attached to the substrate; a mold material on the substrate and adjacent to the at least one integrated circuit device; and at least one heat dissipation structure contacting the at least one integrated circuit, wherein the at least one heat dissipation structure is embedded either within the mold material or between the mold material and the substrate.

公开(公告)号：US11522291B2

公开(公告)日：2022-12-06

申请号：US16230636

申请日：2018-12-21

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  William James Lambert ,  Xiaoqian Li ,  Nitin A. Deshpande ,  Debendra Mallik

IPC: H01Q9/04

Abstract: Disclosed herein are antenna boards, antenna modules, and communication devices. For example, in some embodiments, an antenna board may include a plurality of antenna patches coupled to a dielectric material and a plurality of pedestals extending from a face of the dielectric material and at least partially embedded in the dielectric material.

公开(公告)号：US11515248B2

公开(公告)日：2022-11-29

申请号：US17009308

申请日：2020-09-01

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC: H01L25/18 ,  H01L23/522 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L23/538 ,  H01L21/56

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.