PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    91.
    发明申请
    PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
    压电元件及其制造方法

    公开(公告)号:US20090195125A1

    公开(公告)日:2009-08-06

    申请号:US12361031

    申请日:2009-01-28

    Inventor: Kiyotaka MATSUGI

    Abstract: A piezoelectric device includes: a piezoelectric resonator element; a package storing the piezoelectric resonator element therein in a manner to mount the piezoelectric resonator element on a base portion thereof composed of at least three layers that are layered; and a through hole penetrating through the base portion. In the device, the through hole includes a first hole formed on a first layer which is positioned to face the piezoelectric resonator element among the three layers; a second hole formed on a second layer contacting with the first layer; a third hole formed larger than the second hole on a third layer contacting with the second layer; and a metal coat formed on an inner wall surface of the second hole, and a sealing part for sealing the package is formed with a sealant in at least the second hole.

    Abstract translation: 压电装置包括:压电谐振元件; 以压电谐振元件的方式将压电谐振元件安装在由层叠的至少三层构成的基底部分上的封装; 以及穿过基部的通孔。 在该装置中,通孔包括形成在第一层上的第一孔,该第一层定位成面对三层之间的压电谐振元件; 形成在与第一层接触的第二层上的第二孔; 在与第二层接触的第三层上比第二孔大的第三孔; 以及形成在第二孔的内壁表面上的金属涂层和用于密封包装的密封部分至少在第二孔中形成有密封剂。

    Ground strap for suppressing stiction during MEMS fabrication
    93.
    发明授权
    Ground strap for suppressing stiction during MEMS fabrication 有权
    用于在MEMS制造过程中抑制静摩擦的接地带

    公开(公告)号:US07544531B1

    公开(公告)日:2009-06-09

    申请号:US11770509

    申请日:2007-06-28

    Inventor: Charles Grosjean

    Abstract: To suppress stiction of a MEMS resonator during fabrication, conductive structures of the MEMS resonator are electrically coupled via a ground strap during the step of forming isolation trenches around their contact structures. After the isolation trenches have been formed, the ground strap is transformed into a non-conductive material to complete the electrical isolation of the conductive structures. An etch mask formed on top of the ground strap prevents etching of the ground strap during the formation of the trenches. Depending on the etching process, the ground strap may be formed as a bridge that suspends above the isolation trench or as a column that extends down to the bottom of the isolation trench.

    Abstract translation: 为了在制造期间抑制MEMS谐振器的静电,在谐振槽周围形成接触结构的步骤期间,MEMS谐振器的导电结构经由接地带电耦合。 在形成隔离沟槽之后,将接地带转变成非导电材料以完成导电结构的电隔离。 形成在接地带顶部上的蚀刻掩模防止了在形成沟槽期间对接地带的蚀刻。 取决于蚀刻工艺,接地带可以形成为悬挂在隔离沟槽之上的桥,或者形成为向下延伸到隔离沟槽的底部的柱。

    Functional Device
    94.
    发明申请
    Functional Device 有权
    功能设备

    公开(公告)号:US20080233349A1

    公开(公告)日:2008-09-25

    申请号:US11924924

    申请日:2007-10-26

    Abstract: The present invention provides a low-cost MEMS functional device by improving air tightness of a jointed section by anode junction in wafer level packaging for MEMS based functional devices. The MEMS functional device comprises a function element section formed by processing a substrate mainly made of Si, a metallized film for sealing formed around the functional element, and a glass substrate jointed to the metallized film for sealing by anode junction. Formed on a surface of the metallized film for sealing is a metallized film containing at least one of Sn and Ti as a main component.

    Abstract translation: 本发明通过在基于MEMS的功能器件的晶片级封装中改善阳极结的接合部分的气密性来提供低成本MEMS功能器件。 MEMS功能器件包括通过处理主要由Si制成的衬底,形成在功能元件周围形成的用于密封的金属化膜形成的功能元件部分,以及连接到金属化膜的用于通过阳极接合进行密封的玻璃衬底。 形成在用于密封的金属化膜的表面上是以Sn和Ti中的至少一种为主要成分的金属化膜。

    MEMS DEVICE
    95.
    发明申请
    MEMS DEVICE 有权
    MEMS器件

    公开(公告)号:US20080093685A1

    公开(公告)日:2008-04-24

    申请号:US11876107

    申请日:2007-10-22

    CPC classification number: B81B3/0086 B81B2201/0271

    Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

    Abstract translation: 微机电系统(MEMS)器件包括半导体衬底,包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极,以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压,而n型阱对固定电极施加负电压。

    Method for making an electromechanical component on a plane substrate
    96.
    发明申请
    Method for making an electromechanical component on a plane substrate 有权
    在平面基板上制造机电部件的方法

    公开(公告)号:US20080076211A1

    公开(公告)日:2008-03-27

    申请号:US11904859

    申请日:2007-09-27

    Abstract: Method for making an electromechanical component on a plane substrate and comprising at least one structure vibrating in the plane of the substrate and actuation electrodes. The method comprises at least the following steps in sequence: formation of the substrate comprising one silicon area partly covered by two insulating areas, formation of a sacrificial silicon and germanium alloy layer by selective epitaxy starting from the uncovered part of the silicon area, formation of a strongly doped silicon layer by epitaxy, comprising a monocrystalline area arranged on said sacrificial layer and two polycrystalline areas arranged on insulating areas, simultaneous formation of the vibrating structure and actuation electrodes, by etching of a predetermined pattern in the monocrystalline area designed to form spaces between the electrodes and the vibrating structure, elimination of said sacrificial silicon and germanium alloy layer by selective etching.

    Abstract translation: 一种用于在平面基板上制造机电部件并且包括在所述基板和致动电极的平面中振动的至少一个结构的方法。 该方法至少包括以下步骤:基底的形成,其包括由两个绝缘区域部分覆盖的一个硅区域,通过从硅区域的未覆盖部分开始的选择性外延形成牺牲硅和锗合金层,形成 通过外延的强掺杂硅层,包括布置在所述牺牲层上的单晶区域和布置在绝缘区域上的两个多晶区域,同时形成振动结构和致动电极,通过在设计成形成空间的单晶区域中蚀刻预定图案 在电极和振动结构之间,通过选择性蚀刻消除所述牺牲硅和锗合金层。

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