公开(公告)号：US07527997B2

公开(公告)日：2009-05-05

申请号：US11101861

申请日：2005-04-08

Applicant: Bai Xu ,  Natalya Tokranova ,  James Castracane

Inventor： Bai Xu ,  Natalya Tokranova ,  James Castracane

IPC: H01L21/00

CPC classification number: B81C3/001 ,  B81B2201/0292 ,  B81C2203/031

Abstract: A silicon-on-insulator (SOI) substrate is anodically bonded to a glass substrate in a MEMS structure with or without electrically bypassing the insulator layer by electrically comprising the silicon layers. The insulator layer serves as an etch stop to create a well-defined, thin silicon membrane for a sensor. A second glass substrate is anodically bonded to the other side of the SOI substrate, and debonding of the existing anodic bond prevented by eliminating any potential drop across the existing bonded surface.

Abstract translation: 绝缘体上硅（SOI）衬底在具有或不通过电耦合硅层电绝缘绝缘体层的MEMS结构中阳极结合到玻璃衬底。 绝缘体层用作蚀刻停止层以产生用于传感器的明确限定的薄硅膜。 第二玻璃基板阳极结合到SOI衬底的另一侧，并且通过消除现有接合表面上的任何电位下降阻止了现有阳极结合的剥离。

公开(公告)号：US07338202B1

公开(公告)日：2008-03-04

申请号：US10883549

申请日：2004-07-01

Applicant: Jayanta S. Kapat ,  Linan An ,  Sanjeev Bharani

Inventor： Jayanta S. Kapat ,  Linan An ,  Sanjeev Bharani

IPC: G01N25/40 ,  G01K17/06 ,  H01L21/00

CPC classification number: G01K17/06 ,  B81B2201/0292 ,  B81C1/0069 ,  G01K7/22 ,  G01N25/40

Abstract: Novel micro electro mechanical systems (MEMS)-based sensors for use in ultra-high temperature environments are disclosed. The MEMS-based sensors are derived from a class of polymer-derived ceramics selected from the group consisting of SiCN, SiBCN and SiAlCN. The materials of construction are such that, the sensors are capable of accurate, real-time, on-line and in-situ monitoring, suppression of combustion oscillations and detailed measurements in operating structures that have temperatures of from about 1500° K to about 2000° K, extreme pressures/turbulence and harsh chemical off gases. When the novel sensors are mounted on a hot gas path wall, such as, at a combustor exit, there can be a continuous monitoring of pressure pulses/oscillations, wall shear stress, temperature and surface heat flux.

Abstract translation: 公开了用于超高温环境的基于微机电系统（MEMS）的传感器。 基于MEMS的传感器衍生自一类选自SiCN，SiBCN和SiAlCN的聚合物衍生的陶瓷。 结构材料使得传感器能够精确，实时，在线和原位监测，抑制燃烧振荡和具有约1500°K至约2000°温度的操作结构中的详细测量 °K，极压/湍流和恶劣的化学废气。 当新型传感器安装在热气路径壁上时，例如在燃烧器出口处，可以连续监测压力脉冲/振荡，壁剪切应力，温度和表面热通量。

公开(公告)号：US07326586B2

公开(公告)日：2008-02-05

申请号：US11172787

申请日：2005-07-05

Applicant: Makoto Asai

Inventor： Makoto Asai

IPC: H01L21/00

CPC classification number: B81C1/00142 ,  B81B2201/0292 ,  B81B2203/0118 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

Abstract: A method for manufacturing a semiconductor physical quantity sensor is provided. The sensor includes a multi-layered substrate, a cavity, a groove, a movable portion and a fixed portion. The multi-layered substrate includes a support substrate, an embedded insulation film, and a semiconductor layer. The method includes the steps of: preparing the multi-layered substrate having a sacrifice layer embedded in the semiconductor layer so that the sacrifice layer is disposed at a cavity-to-be-formed portion; forming the groove from the semiconductor layer to reach the sacrifice layer; and selectively etching the sacrifice layer from a bottom of the groove to form a cavity.

Abstract translation: 提供一种半导体物理量传感器的制造方法。 传感器包括多层基板，空腔，凹槽，可移动部分和固定部分。 多层基板包括支撑基板，嵌入式绝缘膜和半导体层。 该方法包括以下步骤：制备具有嵌入在半导体层中的牺牲层的多层基板，使得牺牲层设置在待形成腔部分; 从半导体层形成凹槽到达牺牲层; 并且从凹槽的底部选择性地蚀刻牺牲层以形成空腔。

公开(公告)号：US20080009090A1

公开(公告)日：2008-01-10

申请号：US11896171

申请日：2007-08-30

Applicant: Makoto Asai

Inventor： Makoto Asai

IPC: H01L21/306

CPC classification number: B81C1/00626 ,  B81B2201/0235 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81C2201/014 ,  B81C2201/019 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

Abstract: A physical quantity sensor includes: a semiconductor substrate; a cavity disposed in the substrate and extending in a horizontal direction of the substrate; a groove disposed on the substrate and reaching the cavity; a movable portion separated by the cavity and the groove so that the movable portion is movably supported on the substrate; and an insulation layer disposed on a bottom of the movable portion so that the insulation layer provides a roof of the cavity.

Abstract translation: 物理量传感器包括：半导体衬底; 设置在所述基板中并在所述基板的水平方向上延伸的空腔; 设置在所述基板上并到达所述空腔的凹槽; 可移动部分，由空腔和沟槽分隔开，使得可移动部分可移动地支撑在基板上; 以及设置在所述可动部分的底部上的绝缘层，使得所述绝缘层提供所述空腔的顶部。

公开(公告)号：US20060152105A1

公开(公告)日：2006-07-13

申请号：US11036438

申请日：2005-01-13

Applicant: Vladimir Aksyuk ,  Maria Simon ,  Richart Slusher

Inventor： Vladimir Aksyuk ,  Maria Simon ,  Richart Slusher

IPC: H02N10/00

CPC classification number: H02N10/00 ,  B81B2201/0292 ,  G01J5/40

Abstract: A heat-sensitive apparatus includes a substrate with a top surface, one or more bars being rotatably joined to the surface and having bimorph portions, and a plate rotatably joined to the surface and substantially rigidly joined to the one or more bars. Each bimorph portion bends in response to being heated. The one or more bars and the plate are configured to cause the plate to move farther away from the top surface in response to the one or more bimorph portions being heated.

公开(公告)号：US06730978B2

公开(公告)日：2004-05-04

申请号：US10429988

申请日：2003-05-06

Applicant: Randall L. Kubena ,  Michael J. Little ,  LeRoy H. Hackett

Inventor： Randall L. Kubena ,  Michael J. Little ,  LeRoy H. Hackett

IPC: H01L2714

CPC classification number: B81C1/0015 ,  B81B2201/0292 ,  B81C2203/036 ,  H01H59/0009

Abstract: A method of making a micro electromechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

Abstract translation: 制造微机电开关或隧道传感器的方法。 在第一基板或晶片上限定悬臂梁结构和配合结构; 并且在第二衬底或晶片上限定至少一个接触结构和配合结构，所述第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。 在至少一个配合结构上提供粘合层，优选共晶粘合层。 第一基板的配合结构被移动成与第二基板或晶片的配合结构面对面的关系。 在两个基板之间施加压力，以便在接合或共晶层处在两个配合结构之间发生结合。 然后移除第一衬底或晶片以释放悬臂梁结构以相对于第二衬底或晶片移动。

公开(公告)号：US20040023429A1

公开(公告)日：2004-02-05

申请号：US10210315

申请日：2002-08-01

Applicant: Motorola Inc.

Inventor： Juergen A. Foerstner ,  Steven M. Smith ,  Raymond Mervin Roop

IPC: H01L021/00

CPC classification number: B81C1/0038 ,  B81B2201/018 ,  B81B2201/0292 ,  B81C1/00246 ,  B81C2201/0164 ,  B81C2203/0735 ,  H01G5/18

Abstract: A method is provided for making a MEMS structure (69). In accordance with the method, a CMOS substrate (51) is provided which has interconnect metal (53) deposited thereon. A MEMS structure is created on the substrate through the plasma assisted chemical vapor deposition (PACVD) of a material selected from the group consisting of silicon and silicon-germanium alloys. The low deposition temperatures attendant to the use of PACVD allow these materials to be used for MEMS fabrication at the back end of an integrated CMOS process.

公开(公告)号：US06495945B2

公开(公告)日：2002-12-17

申请号：US09948077

申请日：2001-09-06

Applicant: Hirofumi Yamaguchi ,  Nobuo Takahashi

Inventor： Hirofumi Yamaguchi ,  Nobuo Takahashi

IPC: H01L4108

CPC classification number: B81C1/0038 ,  B81B2201/0292 ,  B81C2203/038 ,  C04B35/462 ,  C04B35/475 ,  C04B2235/3201 ,  C04B2235/3255 ,  C04B2235/3298 ,  H01L41/0973

Abstract: A ceramic substrate 1 comprises a thin diaphragm portion 3 and a thick portion 2. A lower electrode 4 is formed on the ceramic substrate and is spaced apart from an auxiliary electrode 8, also formed on the ceramic substrate. A bonding layer 7C comprises an insulator and is formed on the ceramic substrate between the lower and auxiliary electrodes. A piezoelectric/electrostrictive layer 5 is formed on at least a portion of each of the lower electrode, the auxiliary electrode and the bonding layer. An upper electrode 6 extends over the piezoelectric/electrostrictive layer and contacts the auxiliary electrode. A bonded portion exists wherein the bonding layer serves to completely bond together the substrate and the piezoelectric/electrostrictive film layer.

Abstract translation: 陶瓷基板1包括薄的隔膜部分3和厚的部分2.下部电极4形成在陶瓷基板上，并且与也形成在陶瓷基板上的辅助电极8间隔开。 接合层7C包括绝缘体，并且形成在陶瓷基板上的下电极和辅助电极之间。 在下电极，辅助电极和接合层的至少一部分上形成压电/电致伸缩层5。 上电极6在压电/电致伸缩层上延伸并与辅助电极接触。 存在粘合部分，其中结合层用于将基底和压电/电致伸缩膜层完全结合在一起。

公开(公告)号：US6128961A

公开(公告)日：2000-10-10

申请号：US101014

申请日：1998-06-24

Applicant: Dan Haronian

Inventor： Dan Haronian

IPC: B81B3/00 ,  G01L1/18 ,  G01L9/00 ,  G01P15/12 ,  G01B7/16

CPC classification number: B81C1/00246 ,  G01L1/18 ,  G01L9/0098 ,  G01P15/124 ,  B81B2201/0292 ,  B81C2203/0742

Abstract: A microelectronics deformation sensor including at least one stress sensor directly integrated on at least one of an extremity of a supported deformable structure and a support of the deformable structure, the deformable structure being constructed of a single crystal material, the at least one stress sensor sensing a stress in a vicinity of the extremity and thereby sensing a deformation of the deformable structure.

Abstract translation: PCT No.PCT / IL96 / 00190 Sec。 371日期：1998年8月24日 102（e）1998年8月24日PCT 1996年12月24日PCT PCT。 出版物WO97 / 24915 日期1997年7月17日一种微电子变形传感器，其包括直接集成在可支撑的可变形结构的末端中的至少一个上的至少一个应力传感器和可变形结构的支撑件，该可变形结构由单晶材料构成， 至少一个应力传感器感测在肢体附近的应力，从而感测可变形结构的变形。

公开(公告)号：US5318652A

公开(公告)日：1994-06-07

申请号：US994157

申请日：1992-12-21

Applicant: Robert D. Horning ,  Thomas G. Stratton ,  Deidrich J. Saathoff

Inventor： Robert D. Horning ,  Thomas G. Stratton ,  Deidrich J. Saathoff

IPC: G01L9/04 ,  B81C1/00 ,  G01L9/00 ,  G01L9/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L29/84 ,  B32B31/00

CPC classification number: B81C1/00182 ,  G01L9/0042 ,  G01L9/0073 ,  H01L21/2007 ,  B81B2201/0292 ,  B81B2203/0127

Abstract: Low temperature wafer bonding process enhancement makes a wafer surface hydrophobic, preparing it with a buffered oxide etchant and then exposing it to H.sub.2 O.sub.2 before thermoelectric bonding. Has particular application to diaphragm-based pressure sensor construction.

Abstract translation: 低温晶片接合工艺增强使晶片表面疏水，用缓冲氧化物蚀刻剂制备，然后在热电接合之前将其暴露于H 2 O 2。 特别适用于膜片式压力传感器的施工。