公开(公告)号：US20030160023A1

公开(公告)日：2003-08-28

申请号：US10373235

申请日：2003-02-24

Applicant: BENO CORPORATION

Inventor： In-Yao Lee ,  Chih-Ching Chen

IPC: C03C025/68

CPC classification number: B81C1/0042 ,  B01L3/0241 ,  B41J2/16 ,  B41J2/1629 ,  B41J2/1631 ,  B81B2201/052 ,  B81B2203/0392 ,  B81C1/00595 ,  B81C2201/0136

Abstract: A method of manufacturing a fluid injection device. The method of the present invention applies a compensated geometric shape of the unetched isolating portions to increase the additional compensated portion for etching, or the ion implanting process to reduce the etching rate of the unetched isolating portions. Thus, crosstalk or overshoot in the isolating portions of the fluid injection device can be reduced, and the fluid injection device can be precisely manufactured in a small size.

Abstract translation: 一种制造流体注射装置的方法。 本发明的方法应用未蚀刻绝缘部分的补偿几何形状以增加用于蚀刻的附加补偿部分，或离子注入工艺以降低未蚀刻绝缘部分的蚀刻速率。 因此，可以减少流体注入装置的隔离部分中的串扰或过冲，并且能够精确地制造流体注射装置。

公开(公告)号：US20030116813A1

公开(公告)日：2003-06-26

申请号：US10169464

申请日：2002-10-28

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: H01L021/00 ,  H01L027/14 ,  H01L029/84

CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2201/036 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2203/0136

Abstract: A micromechanical component having a substrate (10) made from a substrate material having a first doping type (p), a micromechanical functional structure provided in the substrate (10) and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones (15; 15a; 15b; 15c; 730; 740; 830) made from the substrate material having a second doping type (n), the zones being at least partially surrounded by a cavity (50; 50e-f), and the cover layer has a porous layer (30) made from the substrate material.

Abstract translation: 一种具有由具有第一掺杂型（p）的衬底材料制成的衬底（10）的微机械部件，以及设置在衬底（10）中的微机械功能结构和覆盖层，以至少部分地覆盖微机械功能结构。 所述微机械功能结构具有由具有第二掺杂型（n）的所述衬底材料制成的区域（15; 15a; 15b; 15c; 730; 740; 830），所述区域至少部分地被空腔（50; 50e- f），并且覆盖层具有由基板材料制成的多孔层（30）。

公开(公告)号：US06143583A

公开(公告)日：2000-11-07

申请号：US93492

申请日：1998-06-08

Applicant: Ken Maxwell Hays

Inventor： Ken Maxwell Hays

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/00

CPC classification number: B81C1/00595 ,  B81B2201/0242 ,  B81B2203/033 ,  B81C2201/0136 ,  B81C2201/0191 ,  B81C2203/031

Abstract: The method of the present invention provides a process for manufacturing MEMS devices having more precisely defined mechanical and/or electromechanical members. The method of the present invention begins by providing a partially sacrificial substrate and a support substrate. In order to space the mechanical and/or electromechanical members of the resulting MEMS device above the support substrate, mesas are formed on the support substrate. By forming the mesas on the support substrate instead of the partially sacrificial substrate, the mechanical and/or electromechanical members can be more precisely formed from the partially sacrificial substrate since the inner surface of the partially sacrificial substrate is not etched and therefore remains planar. As such, trenches can be precisely etched through the planar inner surface of the partially sacrificial substrate to define mechanical and/or electromechanical members of the MEMS device. The present invention also provides an improved MEMS device, such as an improved gyroscope, that includes more precisely and reliably defined mechanical and/or electromechanical members.

Abstract translation: 本发明的方法提供了一种用于制造具有更精确定义的机械和/或机电构件的MEMS装置的方法。 本发明的方法开始于提供部分牺牲衬底和支撑衬底。 为了将所得MEMS器件的机械和/或机电部件放置在支撑基板上方，台面形成在支撑基板上。 通过在支撑衬底上形成台面而不是部分牺牲衬底，可以从部分牺牲衬底更精确地形成机械和/或机电构件，因为部分牺牲衬底的内表面没有被蚀刻并因此保持平面。 因此，可以通过部分牺牲衬底的平面内表面精确地蚀刻沟槽，以限定MEMS器件的机械和/或机电部件。 本发明还提供了一种改进的MEMS器件，例如改进的陀螺仪，其包括更准确且可靠地定义的机械和/或机电元件。

公开(公告)号：US5902120A

公开(公告)日：1999-05-11

申请号：US41805

申请日：1998-03-13

Applicant: Guenter Igel ,  Martin Mall

Inventor： Guenter Igel ,  Martin Mall

IPC: H01L23/34 ,  B81C1/00 ,  H01L23/36 ,  H01L21/302

CPC classification number: B81C1/00666 ,  B81B2203/0136 ,  B81C2201/0136 ,  B81C2201/0173

Abstract: A process is disclosed for producing spatially patterned components from a body. On the backside of the body, a retardation layer with openings is provided for retarding a removal of the material of the body, and areas of migration-capable material are deposited. The body is subjected to a thermal migration process to form migration regions. Then, in a single material removal step, the components are separated from the body and the migration regions are exposed.

Abstract translation: 公开了用于从身体产生空间图案化部件的方法。 在身体的背面，提供具有开口的延迟层，用于延缓身体材料的去除，并沉积可迁移材料的区域。 对身体进行热迁移过程以形成迁移区域。 然后，在单个材料去除步骤中，将组分与身体分离并且暴露出迁移区域。

公开(公告)号：US5854122A

公开(公告)日：1998-12-29

申请号：US816651

申请日：1997-03-13

Applicant: Kenneth Maxwell Hays ,  Bradley Leonard Halleck ,  Eugene Coleman Whitcomb

Inventor： Kenneth Maxwell Hays ,  Bradley Leonard Halleck ,  Eugene Coleman Whitcomb

IPC: H01L21/306 ,  B81B3/00 ,  F15C5/00 ,  H01L29/84 ,  H01L21/30 ,  H01L21/46

CPC classification number: B81C1/00595 ,  B81C2201/0136 ,  B81C2201/019

Abstract: Micromachining a microelectromechanical structure requires one or more heavily doped silicon layers. Intricately patterned structures are created in a heavily doped surface layer on a relatively undoped substrate. The substrate is subsequently dissolved in a selective etch. The doping prevents the patterned structures from dissolving. In this invention, a doped layer is grown epitaxially onto the first substrate rather than by diffusing a dopant into the substrate. This produces additional planarity, thickness control, and dopant profile control. The structure may then be placed into a larger device, such as an infrared sensor, an accelerometer, or an angular rate sensor.

Abstract translation: 微加工微机电结构需要一个或多个重掺杂的硅层。 在相对未掺杂的衬底上的重掺杂表面层中产生复杂图案化结构。 随后将衬底溶解在选择性蚀刻中。 掺杂防止图案化结构溶解。 在本发明中，将掺杂层外延生长到第一衬底上，而不是将掺杂剂扩散到衬底中。 这产生额外的平面度，厚度控制和掺杂物分布控制。 然后可以将该结构放置在更大的装置中，例如红外传感器，加速度计或角速度传感器。

公开(公告)号：US5429993A

公开(公告)日：1995-07-04

申请号：US216217

申请日：1994-03-21

Applicant: Bruce A. Beitman

Inventor： Bruce A. Beitman

IPC: G01P15/12 ,  B81B3/00 ,  G01P15/08 ,  H01L21/306 ,  H01L29/84 ,  H01L21/308

CPC classification number: B81C1/0015 ,  G01P15/0802 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81C2201/0104 ,  B81C2201/0136 ,  B81C2201/019 ,  B81C2201/0191 ,  G01P2015/0828

Abstract: A semiconductor accelerometer is formed by attaching a semiconductor layer to a handle wafer by a thick oxide layer. Accelerometer geometry is patterned in the semiconductor layer, which is then used as a mask to etch out a cavity in the underlying thick oxide. The mask may include one or more apertures, so that a mass region will have corresponding apertures to the underlying oxide layer. The structure resulting from an oxide etch has the intended accelerometer geometry of a large volume mass region supported in cantilever fashion by a plurality of piezo-resistive arm regions to a surrounding, supporting portion of the semiconductor layer. Directly beneath this accelerometer geometry is a flex-accommodating cavity realized by the removal of the underlying oxide layer. The semiconductor layer remains attached to the handle wafer by means of the thick oxide layer that surrounds the accelerometer geometry, and which was adequately masked by the surrounding portion of the top semiconductor layer during the oxide etch step. In a second embodiment support arm regions are dimensioned separately from the mass region, using a plurality of buried oxide regions as semiconductor etch stops.

Abstract translation: 半导体加速度计是通过用厚的氧化物层将半导体层附着在手柄晶片上形成的。 加速度传感器几何形状在半导体层中图案化，然后将其用作掩模以蚀刻下面的厚氧化物中的空腔。 掩模可以包括一个或多个孔，使得质量区域将具有到下面的氧化物层的对应的孔。 由氧化物蚀刻产生的结构具有通过多个压阻臂区域以半悬臂方式支撑到半导体层的周围的支撑部分的大体积质量区域的预期加速度计几何形状。 直接在该加速度计几何形状之下的是通过去除下面的氧化物层而实现的柔性容纳腔。 半导体层通过围绕加速度计几何形状的厚氧化物层保持附着到处理晶片，并且在氧化物蚀刻步骤期间，半导体层被顶部半导体层的周围部分充分掩蔽。 在第二实施例中，使用多个掩埋氧化物区域作为半导体蚀刻停止件，将支撑臂区域与质量区域分开设计。

公开(公告)号：US5066533A

公开(公告)日：1991-11-19

申请号：US754004

申请日：1990-06-21

Applicant: William G. America ,  Richard R. Poole

Inventor： William G. America ,  Richard R. Poole

IPC: C23C16/34 ,  G01N25/18 ,  G03F1/22

CPC classification number: B81C1/00063 ,  C23C16/342 ,  G01N25/18 ,  G03F1/22 ,  B81B2201/054 ,  B81C2201/0136 ,  Y10T428/24479

Abstract: A laminated structure includes a wafer member with a membrane attached thereto, the membrane being formed of substantially hydrogen-free boron nitride having a nominal composition B.sub.3 N. The structure may be a component in a mechanical device for effecting a mechanical function, or the membrane may form a masking layer on the wafer. The structure includes a body formed of at least two wafer members laminated together with a cavity formed therebetween, with the boron nitride membrane extending into the cavity so as to provide the structural component such as a support for a heating element or a membrane in a gas valve. In another aspect borom is selectively diffused from the boron nitride into a surface of a silicon wafer. The surface is then exposed to EDP etchant to which the diffusion layer is resistant, thereby forming a channel the wafer member with smooth walls for fluid flow.

Abstract translation: 叠层结构包括具有膜的膜片构件，膜由具有标称组成B3N的基本上无氢的氮化硼形成。 该结构可以是用于实现机械功能的机械装置中的部件，或者膜可以在晶片上形成掩模层。 该结构包括由至少两个晶片构件形成的主体，所述至少两个晶片构件与形成在其间的空腔层压在一起，氮化硼膜延伸到空腔中，以便提供结构部件，例如气体中的加热元件或膜的支撑体 阀。 在另一方面，硼化物选择性地从氮化硼扩散到硅晶片的<100>表面。 然后将表面暴露于扩散层所抵抗的EDP蚀刻剂，从而形成具有平滑壁用于流体流动的晶片构件的通道。