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    Silica container and method for producing the same
    92.
    发明授权
    Silica container and method for producing the same 有权
    二氧化硅容器及其制造方法

    公开(公告)号：US08815403B2

    公开(公告)日：2014-08-26

    申请号：US13131987

    申请日：2010-06-25

    Applicant: Shigeru Yamagata ,  Tomomi Usui

    Inventor： Shigeru Yamagata ,  Tomomi Usui

    IPC: B32B9/04 ,  B32B13/04 ,  B32B5/16 ,  B32B1/08 ,  C03B19/01 ,  C03B37/00 ,  C03B27/012 ,  C03B29/00 ,  C03B11/08 ,  C30B29/06 ,  C30B35/00 ,  C03B19/09 ,  C30B15/10

    CPC classification number: C03B19/095 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/32 ,  C30B15/10 ,  C30B29/06 ,  C30B35/002 ,  Y10T428/131 ,  Y10T428/1317 ,  Y10T428/2982

    Abstract: A method for producing a silica container having a rotational symmetry is provided. The method includes forming a preliminarily molded article by feeding a powdered substrate's raw material to an inner wall of an outer frame having aspiration holes with rotating the frame, and forming a silica substrate. The preliminarily molded article is aspirated from an outer peripheral side with controlling a humidity inside the outer frame by ventilating gases present in the outer frame with charging from inside the preliminarily molded article a gas mixture comprised of an O2 gas and an inert gas and made below a prescribed dew-point temperature by dehumidification, and at the same time heated from inside the preliminarily molded article by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded article to a sintered body while an inner peripheral part to a fused glass body.

    Abstract translation: 提供了具有旋转对称性的二氧化硅容器的制造方法。 该方法包括通过将粉末状基材的原料供给到具有旋转框架的具有抽吸孔的外框架的内壁，并形成二氧化硅基板来形成预成型品。 从外周侧抽吸预成型品，通过从外部框架内部充填从O 2气体和惰性气体构成的气体混合物从外部框架内的气体通风来控制外框内的湿度， 通过除湿规定的露点温度，同时用碳电极通过放电加热熔融法从预成型体内部加热，由此使预成型品的外周部分成为烧结体，而内部 周边部分为熔融玻璃体。

    VERY LOW CTE SLOPE DOPED SILICA-TITANIA GLASS
    94.
    发明申请
    VERY LOW CTE SLOPE DOPED SILICA-TITANIA GLASS 有权
    非常低的CTE斜率DOPED SILICA-TITANIA玻璃

    公开(公告)号：US20140155246A1

    公开(公告)日：2014-06-05

    申请号：US13835039

    申请日：2013-03-15

    Applicant: CORNING INCORPORATED

    Inventor： Sezhian Annamalai ,  Carlos Alberto Duran ,  Kenneth Edward Hrdina

    IPC: G03F1/22

    CPC classification number: G03F1/22 ,  C03B19/12 ,  C03B19/1461 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/23 ,  C03B2201/32 ,  C03B2201/40 ,  C03B2201/42 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/12 ,  C03C2201/23 ,  C03C2201/32 ,  C03C2201/40 ,  C03C2201/42 ,  C03C2203/44 ,  C03C2203/54

    Abstract: The present disclosure is directed to a doped silica-titania glass, DST glass, consisting essentially of 0.1 wt. % to 5 wt. % halogen, 50 ppm-wt. to 6 wt. % one or more oxides of Al, Ta and Nb, 3 wt. % to 10 wt. % TiO2 and the remainder SiO2. In an embodiment the halogen content can be in the range of 0.2 wt. % to 3 wt. % along with 50 ppm-wt. to 6 wt. % one or more oxides of Al, Ta and Nb, 3 wt. % to 10 wt. % TiO2 and the remainder SiO2. In an embodiment the DST glass has an OH concentration of less than 100 ppm. In another embodiment the OH concentration is less than 50 ppm. The DST glass has a fictive temperature Tf of less than 875° C. In an embodiment Tf is less than 825° C. In another embodiment Tf is less than 775° C.

    Abstract translation: 本公开涉及掺杂的二氧化硅 - 二氧化钛玻璃，DST玻璃，其基本上由0.1重量％ ％至5wt。 ％卤素，50ppm-wt。 至6重量％ ％的一种或多种Al，Ta和Nb的氧化物，3wt。 ％〜10重量％ ％的TiO 2和其余的SiO 2。 在一个实施方案中，卤素含量可以在0.2wt。 ％〜3重量％ ％和50ppm-wt。 至6重量％ ％的一种或多种Al，Ta和Nb的氧化物，3wt。 ％〜10重量％ ％的TiO 2和其余的SiO 2。 在一个实施方案中，DST玻璃的OH浓度小于100ppm。 在另一个实施方案中，OH浓度小于50ppm。 DST玻璃具有小于875℃的假想温度Tf。在一个实施方案中，Tf小于825℃。在另一个实施方案中，Tf小于775℃

    Internal vapour deposition process
    95.
    发明授权
    Internal vapour deposition process 有权
    内部气相沉积工艺

    公开(公告)号：US08443630B2

    公开(公告)日：2013-05-21

    申请号：US13082080

    申请日：2011-04-07

    Applicant: Igor Milicevic ,  Mattheus Jacobus Nicolaas Van Stralen ,  Johannes Antoon Hartsuiker ,  Eugen Aldea ,  Eric Aloysius Kuijpers

    Inventor： Igor Milicevic ,  Mattheus Jacobus Nicolaas Van Stralen ,  Johannes Antoon Hartsuiker ,  Eugen Aldea ,  Eric Aloysius Kuijpers

    IPC: C03B37/018

    CPC classification number: C03B37/0183 ,  C03B37/01807 ,  C03B2201/12 ,  C03B2201/24 ,  C03B2201/28 ,  C03B2201/31 ,  C03B2201/32 ,  C03B2201/42

    Abstract: A method for manufacturing a primary preform for optical fibers using an internal vapor deposition process, including the steps of: i) providing a hollow glass substrate tube having a supply side and a discharge side, ii) surrounding at least part of the hollow glass substrate tube by a furnace, iii) supplying a gas flow, doped or undoped, of glass-forming gases to the interior of the hollow glass substrate tube via the supply side thereof, iv) creating a reaction zone in which conditions such that deposition of glass will take place on the interior of the hollow glass tube are created, and v) moving the reaction zone back and forth in longitudinal direction over the hollow glass substrate tube between a reversal point located near the supply side and a reversal point located near the discharge side of the hollow glass substrate tube.

    Abstract translation: 一种使用内部气相沉积工艺制造用于光纤的初级预制棒的方法，包括以下步骤：i）提供具有供给侧和排出侧的中空玻璃基板管，ii）至少部分中空玻璃基板 通过炉子管，iii）通过其供应侧向中空玻璃基底管的内部供应玻璃形成气体的掺杂或未掺杂的气流，iv）产生反应区，其中使玻璃沉积的条件 将产生在中空玻璃管​​的内部，并且v）使反应区域在纵向方向上前后移动到中空玻璃基板管之间，位于靠近供应侧的反转点和位于放电附近的反转点 一侧的中空玻璃基板管。

    METHOD OF MAKING A SILICA-TITANIA GLASS HAVING A TERNARY DOPED CRITICAL ZONE
    96.
    发明申请
    METHOD OF MAKING A SILICA-TITANIA GLASS HAVING A TERNARY DOPED CRITICAL ZONE 审中-公开
    制造具有季节性关键区域的二氧化硅玻璃的方法

    公开(公告)号：US20130047669A1

    公开(公告)日：2013-02-28

    申请号：US13563882

    申请日：2012-08-01

    Applicant: Sezhian Annamalai

    Inventor： Sezhian Annamalai

    IPC: C03B19/06

    CPC classification number: C03B19/06 ,  C03B19/063 ,  C03B2201/32 ,  C03B2201/40 ,  C03B2201/42

    Abstract: In one aspect the disclosure is directed to a binary silica-titania glass blank having a CTE of 0±30 ppb/° C. or less over a temperature range of 5° C. to 35° C., and a doped silica-titania glass critical zone, wherein the dopant(s) are selected from the group consisting of aluminum oxide, and transition metal oxides, and amount of the dopant(s) is in the range of 0.05 wt. % to 8 wt. %. In various embodiments the dopants are selected from the group consisting of 0.25 wt. % to 8 wt. % Al2O3, 0.05 wt. % to 3 wt. % Nb2O5, and 0.25 wt. % to 6 wt. % Ta2O5, and mixtures thereof.

    Abstract translation: 一方面，本公开涉及在5℃至35℃的温度范围内CTE为0±30ppb /℃或更低的二氧化硅 - 二氧化钛玻璃坯料，掺杂的二氧化硅 - 二氧化钛 玻璃临界区，其中所述掺杂剂选自氧化铝和过渡金属氧化物，并且所述掺杂剂的量在0.05重量％的范围内。 ％至8wt。 ％。 在各种实施方案中，掺杂剂选自0.25wt。 ％至8wt。 ％Al 2 O 3，0.05重量％ ％〜3重量％ ％Nb2O5和0.25wt。 ％至6wt。 ％Ta 2 O 5，及其混合物。

    Crucible having a doped upper wall portion and method for making the same
    98.
    发明授权
    Crucible having a doped upper wall portion and method for making the same 有权
    具有掺杂上壁部分的坩埚及其制造方法

    公开(公告)号：US08361228B2

    公开(公告)日：2013-01-29

    申请号：US12752998

    申请日：2010-04-01

    Applicant: Katsuhiko Kemmochi ,  Yasuo Ohama

    Inventor： Katsuhiko Kemmochi ,  Yasuo Ohama

    IPC: C30B35/00

    CPC classification number: C03B19/095 ,  C03B2201/32 ,  C30B15/10 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1072

    Abstract: A fused glass crucible includes a collar of doped aluminum silica that defines uppermost and outermost surfaces of the crucible. The melt line that defines the surface of molten silicon in the crucible may be substantially at the lower end of the collar or slightly above it. Crystallization of the collar makes it hard and therefore supports the remaining uncrystallized portion of the crucible above the melt line. The melt line may also be below the lower end of the collar, especially if the melt is drawn down or poured early in the process. Because there is little or no overlap or because the overlap does not last long, the doped aluminum collar is not damaged by the heat of from the melt.

    Abstract translation: 熔融玻璃坩埚包括限定坩埚的最上表面和最外表面的掺杂铝二氧化硅的环。 限定坩埚中的熔融硅表面的熔体线可以基本上在套环的下端或略高于其上。 轴环的结晶使其变硬，因此支撑坩埚在熔融线之上的剩余未结晶部分。 熔体管线也可以在套环的下端下方，特别是如果熔体在该过程中被提拉或者早期浇注。 因为很少或没有重叠，或者由于重叠不会持续很长时间，所以掺杂的铝合金套环不会被熔体的热量损坏。

    GLASS PREFORM MANUFACTURING METHOD
    100.
    发明申请
    GLASS PREFORM MANUFACTURING METHOD 有权
    玻璃预制件制造方法

    公开(公告)号：US20100300151A1

    公开(公告)日：2010-12-02

    申请号：US12856261

    申请日：2010-08-13

    Applicant: Kenichi TAKAHASHI ,  Youko Yamanashi

    Inventor： Kenichi TAKAHASHI ,  Youko Yamanashi

    IPC: C03B19/08

    CPC classification number: C03B37/01433 ,  C03B2201/28 ,  C03B2201/32 ,  C03B2201/34 ,  C03B2201/36

    Abstract: A glass preform manufacturing method includes: generating glass fine particles by hydrolyzing a source gas in an oxyhydrogen flame; depositing the generated glass fine particles to form a torous glass preform; immersing the porous glass preform in an additive solution including an additive solvent in which a compound containing a desired additive is dissolved to impregnate the additive solution into the porous glass preform; first replacing of replacing the additive solvent remaining in the porous glass preform with the replacement solvent by immersing the porous glass preform in which the additive solution remains in a replacement solvent in which a solubility of the additive is lower than that in the additive solvent and having miscibility with the additive solvent; drying the porous glass preform after the first replacing; and sintering the dried porous glass preform to transparently vitrify the dried porous glass preform.

    Abstract translation: 玻璃预制件的制造方法包括：通过在氢氧焰中水解源气体来产生玻璃微粒; 沉积生成的玻璃细颗粒以形成托盘玻璃预制件; 将多孔玻璃预成型体浸渍在包含其中溶解含有所需添加剂的化合物的添加剂溶剂的添加剂溶液中以将添加剂溶液浸渍到多孔玻璃预制件中; 首先用置换溶剂代替残留在多孔玻璃预制品中的添加剂溶剂，通过浸渍多孔玻璃预制件，其中添加剂溶液保留在添加剂溶解度低于添加剂溶剂中的溶剂中并具有 与添加剂溶剂的混溶性; 第一次更换之后干燥多孔玻璃预制件; 并且将干燥的多孔玻璃预制件烧结以使干燥的多孔玻璃预制件透明地玻璃化。

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