公开(公告)号：US20140161987A1

公开(公告)日：2014-06-12

申请号：US14183320

申请日：2014-02-18

Applicant: ADVANCED ION BEAM TECHNOLOGY., INC.

Inventor： ZHIMIN WAN ,  JOHN D. POLLOCK ,  DONALD WAYNE BERRIAN ,  CAUSON KO-CHUAN JEN

IPC: C23C14/48

CPC classification number: C23C14/48 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/24542 ,  H01J2237/31711

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract translation: 在通过成形离子束注入衬底之前，使用孔装置内的可变孔径来形成离子束，特别是最终在离开衬底前方的位置形成离子束。 因此，可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分，而不需要通过使用多个固定孔或每次重新调整离子束。 换句话说，可以通过定制的离子束分别实现不同的注入，而不需要高成本（使用多个固定孔径器件）和复杂的操作（每次重新调整离子束）。 此外，可以加速用于获取要注入的特定离子束的光束调整过程，以便每次都比使用多个固定孔径和/或重新调整离子束更快，因为可以实现可变孔径的调节 简单地通过机械操作。

公开(公告)号：US20140134833A1

公开(公告)日：2014-05-15

申请号：US14077746

申请日：2013-11-12

Applicant: SEN Corporation

Inventor： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/30472

Abstract: An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece holder for mechanically scanning a workpiece with respect to a beam irradiation region. The beamline device may be operated under a first implantation setting configuration suitable for transport of a low energy/high current beam for high-dose implantation into the workpiece, or a second implantation setting configuration suitable for transport of a high energy/low current beam for low-dose implantation into the workpiece. A beam center trajectory being a reference in a beamline is equal from the ion source to the implantation processing chamber in the first implantation setting configuration and the second implantation setting configuration.

Abstract translation: 离子注入装置包括用于将离子从离子源输送到注入处理室的束线装置。 植入处理室包括用于相对于束照射区域机械地扫描工件的工件保持器。 束线装置可以在适合于将高能量/高电流束输送到工件中的低能量/高电流束的第一注入设置配置下运行，或者适于传输高能/低电流束的第二注入设置配置 低剂量注入工件。 在第一植入设置配置和第二植入设置配置中，在束线中作为参考的束中心轨迹从离子源到注入处理室相等。

公开(公告)号：US08476608B2

公开(公告)日：2013-07-02

申请号：US13533876

申请日：2012-06-26

Applicant: Simon A. Morton ,  Jeffrey Dickert

Inventor： Simon A. Morton ,  Jeffrey Dickert

IPC: G21K1/04

CPC classification number: G21K1/04 ,  H01J2237/0455

Abstract: The present invention provides an adjustable aperture for limiting the dimension of a beam of energy. In an exemplary embodiment, the aperture includes (1) at least one piezoelectric bender, where a fixed end of the bender is attached to a common support structure via a first attachment and where a movable end of the bender is movable in response to an actuating voltage applied to the bender and (2) at least one blade attached to the movable end of the bender via a second attachment such that the blade is capable of impinging upon the beam. In an exemplary embodiment, the beam of energy is electromagnetic radiation. In an exemplary embodiment, the beam of energy is X-rays.

Abstract translation: 本发明提供了一种用于限制能量束的尺寸的可调孔。 在一个示例性实施例中，孔包括（1）至少一个压电弯曲机，其中弯曲机的固定端经由第一附件附接到公共支撑结构，并且弯曲机的可移动端可响应于致动 施加到弯曲机的电压和（2）至少一个通过第二附件附接到弯曲机的可动端的刀片，使得刀片能够撞击在光束上。 在示例性实施例中，能量束是电磁辐射。 在示例性实施例中，能量束是X射线。

公开(公告)号：US20130020495A1

公开(公告)日：2013-01-24

申请号：US13533876

申请日：2012-06-26

Applicant: Simon A. Morton ,  Jeffrey Dickert

Inventor： Simon A. Morton ,  Jeffrey Dickert

IPC: G21K1/04 ,  H01J3/26

CPC classification number: G21K1/04 ,  H01J2237/0455

Abstract: The present invention provides an adjustable aperture for limiting the dimension of a beam of energy. In an exemplary embodiment, the aperture includes (1) at least one piezoelectric bender, where a fixed end of the bender is attached to a common support structure via a first attachment and where a movable end of the bender is movable in response to an actuating voltage applied to the bender and (2) at least one blade attached to the movable end of the bender via a second attachment such that the blade is capable of impinging upon the beam. In an exemplary embodiment, the beam of energy is electromagnetic radiation. In an exemplary embodiment, the beam of energy is X-rays.

Abstract translation: 本发明提供了一种用于限制能量束的尺寸的可调孔。 在一个示例性实施例中，孔包括（1）至少一个压电弯曲机，其中弯曲机的固定端经由第一附件附接到公共支撑结构，并且弯曲机的可移动端可响应于致动 施加到弯曲机的电压和（2）至少一个通过第二附件附接到弯曲机的可动端的刀片，使得刀片能够撞击在光束上。 在示例性实施例中，能量束是电磁辐射。 在示例性实施例中，能量束是X射线。

公开(公告)号：US20120298854A1

公开(公告)日：2012-11-29

申请号：US13474186

申请日：2012-05-17

Applicant: William O. Hamby ,  Joseph Valinski

Inventor： William O. Hamby ,  Joseph Valinski

IPC: G21K5/04

CPC classification number: H01J37/3171 ,  H01J37/023 ,  H01J37/05 ,  H01J49/30 ,  H01J2237/0455 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/24514

Abstract: A method and apparatus is provided for reducing unwanted isotopes of an ion implantation species from an ion beamline. The apparatus herein disclosed is a mass analysis variable exit aperture that selectively reduces the size of an exit aperture as seen by an ion beam. In one embodiment, the variable mass analysis exit aperture is located within a mass analyzer at a position upstream of a resolving aperture and effectively limits the size of an exit aperture so as to allow passage of desired implantation isotope(s) while blocking the passage of unwanted implantation isotopes. In one particular embodiment, the mass analysis variable exit aperture has a mechanical drive mechanism that enables a blocking structure to be moved into the path of an ion beam in a graduated fashion as guided by a control unit that operates based upon one or more characteristics of the ion beam.

Abstract translation: 提供了一种用于从离子束线减少离子注入物质的不想要的同位素的方法和装置。 本文公开的装置是质量分析可变出口孔，其选择性地减小出口孔的尺寸，如离子束所见。 在一个实施例中，可变质量分析出口孔位于质量分析器内的分辨孔的上游位置处，并有效地限制出口孔的尺寸，以允许期望的注入同位素通过，同时阻止 不想要的植入同位素。 在一个具体实施例中，质量分析可变出口孔具有机械驱动机构，其使阻挡结构能够以分级方式移动到离子束的路径中，该控制单元基于一个或多个 离子束。

公开(公告)号：US20120288787A1

公开(公告)日：2012-11-15

申请号：US13443440

申请日：2012-04-10

Applicant: Jin Choi ,  Jin-Ha Jeong ,  Urazaev Vladimir ,  Hea-Yun Lee

Inventor： Jin Choi ,  Jin-Ha Jeong ,  Urazaev Vladimir ,  Hea-Yun Lee

IPC: G03F1/78 ,  G21K5/04

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  G03F1/80 ,  H01J37/3026 ,  H01J2237/0455 ,  H01J2237/31764 ,  H01J2237/31776

Abstract: In a method of forming a reticle and electron beam exposure system, first electron beams are irradiated onto a first region of a blank reticle having a light shielding layer and a photosensitive layer, to form first shot patterns. Second electron beams having a cross-sectional area larger than the first electron beams are irradiated onto a second region of the blank reticle. The photosensitive layer is developed to form first and second mask patterns at the first and second regions, respectively. The light shielding layer is etched off using the first and second mask patterns as an etching mask, thereby forming the mother pattern including a first pattern in the first region and a second pattern in the second region. Accordingly, the enlargement of the second electron beams reduces the scan time for the blank reticle, thereby reducing the process time.

Abstract translation: 在形成掩模版和电子束曝光系统的方法中，将第一电子束照射到具有遮光层和感光层的坯料掩模版的第一区域上，以形成第一射出图案。 具有大于第一电子束的横截面面积的第二电子束被照射到坯料掩模版的第二区域上。 感光层被显影以分别在第一和第二区域形成第一和第二掩模图案。 使用第一和第二掩模图案作为蚀刻掩模蚀刻掉遮光层，从而形成包括第一区域中的第一图案和第二区域中的第二图案的母体图案。 因此，第二电子束的放大减少了空白掩模版的扫描时间，从而缩短了处理时间。

公开(公告)号：US08198610B2

公开(公告)日：2012-06-12

申请号：US12582140

申请日：2009-10-20

Applicant: Richard F. McRay

Inventor： Richard F. McRay

IPC: G21K5/10 ,  H01J37/02

CPC classification number: H01J37/09 ,  H01J37/3171 ,  H01J2237/0455

Abstract: An ion implanter and an ion implant method are disclosed. The ion implanter has an aperture assembly with a variable aperture and is located between an ion source of an ion beam and a holder for holding a wafer. At least one of the size and the shape of the variable aperture is adjustable. The ion beam may be flexibly shaped by the variable aperture, so that the practical implantation on the wafer can be controllably adjusted without modifying an operation of both the ion source and mass analyzer or applying a magnetic field to modify the ion beam. An example of the aperture assembly has two plates, each having an opening formed on its edge such that a variable aperture is formed by a combination of these openings. By respectively moving the plates, the size and the shape of the variable aperture can be changed.

Abstract translation: 公开了一种离子注入机和离子注入方法。 离子注入机具有可变孔径的孔组件，并且位于离子束的离子源和用于保持晶片的保持器之间。 可变孔径的尺寸和形状中的至少一个是可调节的。 离子束可以由可变孔径柔性地形成，从而可以可控地调节晶片上的实际注入，而不改变离子源和质量分析仪的操作或施加磁场来修改离子束。 孔组件的一个例子有两个板，每个板在其边缘上形成一个开口，使得通过这些开口的组合形成可变孔。 通过分别移动板，可以改变可变孔径的尺寸和形状。

公开(公告)号：US08110820B2

公开(公告)日：2012-02-07

申请号：US12300172

申请日：2007-06-13

Applicant: Hilton F. Glavish ,  Dale C. Jacobson ,  Sami K. Hahto ,  Thomas N. Horsky

Inventor： Hilton F. Glavish ,  Dale C. Jacobson ,  Sami K. Hahto ,  Thomas N. Horsky

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0044 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/30477 ,  H01J2237/31703 ,  H01L21/26513

Abstract: A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept art ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight.

Abstract translation: 多用途离子植入物束线配置被构造用于使得能够注入常见的单原子掺杂剂离子种类和簇离子，束线配置具有质量分析器磁体，该质量分析器磁体限定磁体的铁磁极之间的相当宽度的极隙和质量选择孔， 分析器磁体的大小适于接受来自至少约80mm高度和至少约7mm宽度的槽形离子源提取孔的艺术离子束，并且在对应于宽度的平面的平面中在质量选择孔处产生分散体 质量选择孔能够被设置为质量选择宽度，其大小用于选择相同掺杂物种类的簇离子的束，但递增不同的分子量，质量选择孔也能够被设定为基本上更窄的质量 选择宽度和质量选择孔径处的分辨率足以能够选择光束的分析器磁体 单原子或分子量的单原子掺杂离子。

公开(公告)号：US08089052B2

公开(公告)日：2012-01-03

申请号：US12423066

申请日：2009-04-14

Applicant: Daniel Tieger ,  William DiVergilio ,  Edward Eisner ,  Michael Graf

Inventor： Daniel Tieger ,  William DiVergilio ,  Edward Eisner ,  Michael Graf

IPC: H01J49/10 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/061 ,  H01J2237/0835

Abstract: An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.

Abstract translation: 一种离子注入机系统，包括用于产生离子流或离子束的离子源。 离子源具有离子源室壳体，其至少部分地界定电离区域，以在室壳体内产生高浓度的离子浓度。 具有所需特性的离子提取孔覆盖室的电离区域。 在一个实施例中，可动离子提取孔板相对于壳体移动以改变离子束轮廓。 一个实施例包括具有至少细长孔的孔板，并在限定不同离子束轮廓的至少第一和第二位置之间移动。 耦合到孔板的驱动器或致动器使孔板在第一和第二位置之间移动。 一个替代实施例具有两个限定可调节孔的移动板部分。

公开(公告)号：US20110089334A1

公开(公告)日：2011-04-21

申请号：US12582140

申请日：2009-10-20

Applicant: Richard F. McRay

Inventor： Richard F. McRay

IPC: H01J3/14 ,  G21K5/04

CPC classification number: H01J37/09 ,  H01J37/3171 ,  H01J2237/0455

Abstract: An ion implanter and an ion implant method are disclosed. The ion implanter has an aperture assembly with a variable aperture and is located between an ion source of an ion beam and a holder for holding a wafer. At least one of the size and the shape of the variable aperture is adjustable. The ion beam may be flexibly shaped by the variable aperture, so that the practical implantation on the wafer can be controllably adjusted without modifying an operation of both the ion source and mass analyzer or applying a magnetic field to modify the ion beam. An example of the aperture assembly has two plates, each having an opening formed on its edge such that a variable aperture is formed by a combination of these openings. By respectively moving the plates, the size and the shape of the variable aperture can be changed.

Abstract translation: 公开了一种离子注入机和离子注入方法。 离子注入机具有可变孔径的孔组件，并且位于离子束的离子源和用于保持晶片的保持器之间。 可变孔径的尺寸和形状中的至少一个是可调节的。 离子束可以由可变孔径柔性地形成，从而可以可控地调节晶片上的实际注入，而不改变离子源和质量分析仪的操作或施加磁场来修改离子束。 孔组件的一个例子有两个板，每个板在其边缘上形成一个开口，使得通过这些开口的组合形成可变孔。 通过分别移动板，可以改变可变孔径的尺寸和形状。