公开(公告)号：US20230257869A1

公开(公告)日：2023-08-17

申请号：US18013124

申请日：2020-10-22

Applicant: QORVO BIOTECHNOLOGIES, LLC

Inventor： Derya Deniz ,  Philip Johnston ,  Jay Helland ,  John Belsick ,  Kevin McCarron

IPC: C23C14/56 ,  H03H3/02 ,  H03H9/17 ,  H01J37/34 ,  H01J37/32 ,  C23C14/54 ,  C23C14/50 ,  C23C14/35 ,  C23C14/02 ,  C23C14/22 ,  C30B23/00 ,  C30B23/06

CPC classification number: C23C14/566 ,  H03H3/02 ,  H03H9/173 ,  H03H9/175 ,  H01J37/3447 ,  H01J37/32899 ,  H01J37/32743 ,  H01J37/32458 ,  H01J37/3417 ,  H01J37/3405 ,  C23C14/568 ,  C23C14/541 ,  C23C14/50 ,  C23C14/35 ,  C23C14/02 ,  C23C14/225 ,  C30B23/005 ,  C30B23/063 ,  H03H2003/021 ,  H03H2003/025 ,  H01J2237/20285 ,  H01J2237/332 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/20235 ,  H01J2237/20214 ,  H01J2237/201 ,  H01J2237/2007 ,  H01J2237/0455

Abstract: A deposition system is disclosed that allows for growth of inclined c-axis piezoelectric material structures. The system integrates various sputtering modules to yield high quality films and is designed to optimize throughput lending it to a high-volume in manufacturing environment. The system includes two or more process modules including an off-axis module constructed to deposit material at an inclined c-axis and a longitudinal module constructed to deposit material at normal incidence; a central wafer transfer unit including a load lock, a vacuum chamber, and a robot disposed within the vacuum chamber and constructed to transfer a wafer substrate between the central wafer transfer unit and the two or more process modules; and a control unit operatively connected to the robot.

公开(公告)号：US11664186B1

公开(公告)日：2023-05-30

申请号：US17817989

申请日：2022-08-07

Applicant: BORRIES PTE. LTD.

Inventor： Zhongwei Chen ,  Wei Fang ,  Xiaoming Chen ,  Daniel Tang ,  Liang-Fu Fan

IPC: H01J37/09 ,  H01J37/073 ,  H01J37/317 ,  H01J37/28 ,  H01J37/244

CPC classification number: H01J37/09 ,  H01J37/073 ,  H01J37/28 ,  H01J37/3174 ,  H01J37/244 ,  H01J2237/0455 ,  H01J2237/0473

Abstract: The present invention provides an apparatus of electron beam comprising an electron gun with a pinnacle limiting plate having at least one current-limiting aperture. The pinnacle limiting plate is located between a bottom (or lowest) anode and a top (or highest) condenser within the electron gun. A current (ampere) of the electron beam that has passed through the current-limiting aperture remains the same (unchanged) after the electron beam travels through the top condenser and an electron optical column and arrives at a sample space. Electron-electron interaction of the electron beam is thus reduced.

公开(公告)号：US20230154723A1

公开(公告)日：2023-05-18

申请号：US17359365

申请日：2019-12-06

Applicant: ASML Netherlands B.V.

Inventor： Yan REN ,  Albertus Victor Gerardus MANGNUS

IPC: H01J37/147 ,  H01J37/145 ,  H01J37/28 ,  H01J37/20 ,  H01J37/09 ,  G01N23/2251

CPC classification number: H01J37/1478 ,  H01J37/1474 ,  H01J37/145 ,  H01J37/28 ,  H01J37/20 ,  H01J37/09 ,  G01N23/2251 ,  H01J2237/0455 ,  H01J2237/2611 ,  H01J2237/151 ,  H01J2237/226 ,  H01J2237/04926 ,  H01J2237/103 ,  G01N2223/07 ,  G01N2223/418 ,  G01N2223/507

Abstract: Embodiments consistent with the disclosure herein include methods and a multi-beam apparatus configured to emit charged-particle beams for imaging a top and side of a structure of a sample, including: a deflector array including a first deflector and configured to receive a first charged-particle beam and a second charged-particle beam; a blocking plate configured to block one of the first charged-particle beam and the second charged-particle beam; and a controller having circuitry and configured to change the configuration of the apparatus to transition between a first mode and a second mode. In the first mode, the deflector array directs the second charged-particle beam to the top of the structure, and the blocking plate blocks the first charged-particle beam. And in the second mode, the first deflector deflects the first charged-particle beam to the side of the structure, and the blocking plate blocks the second charged-particle beam.

公开(公告)号：US09524851B2

公开(公告)日：2016-12-20

申请号：US14844778

申请日：2015-09-03

Applicant: FEI Company

Inventor： Erwin Fernand de Jong ,  Sorin Lazar ,  Peter Christiaan Tiemeijer ,  Rudolf Geurink

IPC: H01J37/26 ,  H01J37/22 ,  H01J37/28 ,  H01J37/20 ,  H01J37/147

CPC classification number: H01J37/226 ,  H01J37/05 ,  H01J37/09 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244 ,  H01J37/26 ,  H01J37/261 ,  H01J37/28 ,  H01J2237/0455 ,  H01J2237/057 ,  H01J2237/15 ,  H01J2237/2007 ,  H01J2237/24485 ,  H01J2237/24585 ,  H01J2237/2802

Abstract: A method of performing spectroscopy in a Transmission Charged-Particle Microscope comprising: a specimen holder; a source, for producing a beam of charged particles; an illuminator, for directing said beam so as to irradiate the specimen; an imaging system, for directing a flux of charged particles transmitted through the specimen onto a spectroscopic apparatus comprising a dispersing device for dispersing said flux into an energy-resolved array of spectral sub-beams, the method comprising: using an adjustable aperture device to admit a first portion of said array to a detector, while blocking a second portion of said array; providing; using a radiation sensor in said flux upstream of said aperture device to perform localized radiation sensing in a selected region of said second portion of the array, simultaneous with detection of said first portion by said detector; using a sensing result from said sensor to adjust a detection result from said detector.

公开(公告)号：US09496120B2

公开(公告)日：2016-11-15

申请号：US15136503

申请日：2016-04-22

Applicant: Glenn Lane Family Limited Liability Limited Partnership

Inventor： Glenn E. Lane

IPC: H01J37/30 ,  C23C14/48 ,  C23C14/54 ,  H01J37/317 ,  H01J49/06 ,  H01L21/265

CPC classification number: H01J37/3007 ,  C23C14/48 ,  C23C14/54 ,  H01J37/08 ,  H01J37/09 ,  H01J37/3171 ,  H01J49/062 ,  H01J49/26 ,  H01J2237/0213 ,  H01J2237/04 ,  H01J2237/0455 ,  H01J2237/152 ,  H01J2237/31701 ,  H01L21/265

Abstract: Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

公开(公告)号：US20160240349A1

公开(公告)日：2016-08-18

申请号：US15136503

申请日：2016-04-22

Applicant: Glenn Lane Family Limited Liability Limited Partnership

Inventor： Glenn E. LANE

IPC: H01J37/30 ,  H01J49/06 ,  H01J37/317 ,  C23C14/48 ,  C23C14/54

CPC classification number: H01J37/3007 ,  C23C14/48 ,  C23C14/54 ,  H01J37/08 ,  H01J37/09 ,  H01J37/3171 ,  H01J49/062 ,  H01J49/26 ,  H01J2237/0213 ,  H01J2237/04 ,  H01J2237/0455 ,  H01J2237/152 ,  H01J2237/31701 ,  H01L21/265

Abstract: Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

公开(公告)号：US09269541B2

公开(公告)日：2016-02-23

申请号：US14549016

申请日：2014-11-20

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Kouji Inada ,  Kouji Kato

IPC: H01J37/09 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/04 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/08 ,  H01J2237/24535 ,  H01J2237/304 ,  H01J2237/30472 ,  H01J2237/31701

Abstract: A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.

Abstract translation: 用于离子注入机的束流调节器包括设置在离子束聚焦点或其附近的可变孔径装置。 可变孔径装置被配置为在焦点处调整垂直于离子束聚焦方向的方向上的离子束宽度，以便控制注入束电流。 可变孔径装置可以紧靠质量分析狭缝的下游设置。 束电流调节器可以设置有包括高能多级线性加速单元的高能离子注入机。

公开(公告)号：US20140138542A1

公开(公告)日：2014-05-22

申请号：US14232526

申请日：2012-07-19

Applicant: Hiromi Inada ,  Kuniyasu Nakamura

Inventor： Hiromi Inada ,  Kuniyasu Nakamura

IPC: H01J37/26 ,  H01J37/28

CPC classification number: H01J37/263 ,  G01N23/2206 ,  H01J37/153 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0455 ,  H01J2237/0492 ,  H01J2237/153 ,  H01J2237/1532 ,  H01J2237/21 ,  H01J2237/221 ,  H01J2237/225 ,  H01J2237/226 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/2611 ,  H01J2237/2802

Abstract: A scanning transmission electron microscope according to the present invention includes an electron lens system having a small spherical aberration coefficient for enabling three-dimensional observation of a 0.1 nm atomic size structure. The scanning transmission electron microscope according to the present invention also includes an aperture capable of changing an illumination angle; an illumination electron lens system capable of changing the probe size of an electron beam probe and the illumination angle; a secondary electron detector (9); a transmission electron detector (13); a forward scattered electron beam detector (12); a focusing unit (16); an image processor for identifying image contrast; an image processor for computing image sharpness; a processor for three-dimensional reconstruction of an image; and a mixer (18) for mixing a secondary electron signal and a specimen forward scattered electron signal.

Abstract translation: 根据本发明的扫描透射电子显微镜包括具有小球面像差系数的电子透镜系统，用于实现0.1nm原子尺寸结构的三维观察。 根据本发明的扫描透射电子显微镜还包括能够改变照明角度的孔; 能够改变电子束探头的探头尺寸和照明角度的照明电子透镜系统; 二次电子检测器（9）; 透射电子检测器（13）; 前向散射电子束检测器（12）; 聚焦单元（16）; 用于识别图像对比度的图像处理器; 用于计算图像清晰度的图像处理器; 用于图像的三维重建的处理器; 以及用于混合二次电子信号和样本前向散射电子信号的混合器（18）。

公开(公告)号：US08319197B2

公开(公告)日：2012-11-27

申请号：US12487635

申请日：2009-06-18

Applicant: Hitoshi Seki

Inventor： Hitoshi Seki

IPC: G21K5/10

CPC classification number: H01J37/3053 ,  H01J37/09 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/20221 ,  H01J2237/20285 ,  H01J2237/3151 ,  H03H3/04

Abstract: A wafer having a plurality of elements closely arranged thereon is irradiated with an ion beam while being conveyed in one direction by a conveying unit. Each of shutters adjusts an irradiation time during which a target area of the wafer is irradiated with the ion beam. Thus, a frequency in the target area is adjusted. Each of a plurality of mask holes in a pattern mask disposed between the wafer and the shutters corresponds to one area of the wafer. The mask holes are alternately displaced in a wafer conveying direction in which the wafer is conveyed, and are arranged in a plurality of columns perpendicular to the wafer conveying direction. To individually open and close the mask holes, the shutters are arranged to correspond to the respective mask holes. Thus, frequency adjustment, for areas in one column perpendicular to the wafer conveying direction, is performed in multiple steps.

Abstract translation: 具有紧密配置的多个元件的晶片在被输送单元沿一个方向输送的同时用离子束照射。 每个挡板调节用离子束照射晶片的目标区域的照射时间。 因此，调整目标区域中的频率。 布置在晶片和快门之间的图案掩模中的多个掩模孔中的每一个对应于晶片的一个区域。 掩模孔在输送晶片的晶片传送方向上交替位移，并且布置在垂直于晶片传送方向的多个列中。 为了单独打开和关闭掩模孔，快门被布置成对应于相应的掩模孔。 因此，对于垂直于晶片输送方向的一列的区域的频率调整，是以多个步骤进行的。

公开(公告)号：US08294125B2

公开(公告)日：2012-10-23

申请号：US12634444

申请日：2009-12-09

Applicant: Liqun Han ,  Marian Mankos ,  Xinrong Jiang ,  Rex Runyon ,  John Greene

Inventor： Liqun Han ,  Marian Mankos ,  Xinrong Jiang ,  Rex Runyon ,  John Greene

IPC: H01J37/20 ,  H01J37/29 ,  G01N23/225

CPC classification number: H01J37/09 ,  G01B15/00 ,  H01J37/28 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/2817 ,  H01L22/12

Abstract: One embodiment relates to an electron-beam apparatus for defect inspection and/or review of substrates or for measuring critical dimensions of features on substrates. The apparatus includes an electron gun and an electron column. The electron gun includes an electron source configured to generate electrons for an electron beam and an adjustable beam-limiting aperture which is configured to select and use one aperture size from a range of aperture sizes. Another embodiment relates to providing an electron beam in an apparatus. Advantageously, the disclosed apparatus and methods reduce spot blur while maintaining a high beam current so as to obtain both high sensitivity and high throughput.

Abstract translation: 一个实施例涉及一种用于缺陷检查和/或检查基板或用于测量基板上的特征的关键尺寸的电子束装置。 该装置包括电子枪和电子柱。 电子枪包括被配置为产生用于电子束的电子的电子源和可调节的光束限制孔，其被配置为从一定范围的孔径尺寸中选择和使用一个孔径尺寸。 另一实施例涉及在装置中提供电子束。 有利地，所公开的装置和方法在保持高光束电流的同时减少斑点模糊，以便获得高灵敏度和高吞吐量。