公开(公告)号：US20220254606A1

公开(公告)日：2022-08-11

申请号：US17728794

申请日：2022-04-25

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  SHAHID RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US20220037120A1

公开(公告)日：2022-02-03

申请号：US17315259

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Jonathan KOLBECK ,  Linying CUI

IPC: H01J37/32 ,  H01L21/311

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20210043449A1

公开(公告)日：2021-02-11

申请号：US17045453

申请日：2019-04-08

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/26 ,  H01L21/033

Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

公开(公告)号：US20210040618A1

公开(公告)日：2021-02-11

申请号：US16982955

申请日：2018-10-16

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit B. MALLICK

IPC: C23C16/503 ,  H01L21/02 ,  C23C16/505 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52

Abstract: Embodiments of the present disclosure relate to methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a plasma-enhanced chemical vapor deposition (PECVD) process, in particular, the methods described herein utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with power to create a plasma which deposits an amorphour carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods described herein provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.

公开(公告)号：US20190271082A1

公开(公告)日：2019-09-05

申请号：US16418994

申请日：2019-05-21

Applicant: Applied Materials, Inc.

Inventor： Haitao WANG ,  Hamid NOORBAKHSH ,  Chunlei ZHANG ,  Sergio Fukuda SHOJI ,  Kartik RAMASWAMY ,  Roland SMITH ,  Brad L. MAYS

IPC: C23C16/455 ,  C23C16/44 ,  H01J37/32

Abstract: Embodiments of the present disclosure relate to a showerhead assembly for use in a processing chamber. The showerhead assembly includes a porous insert disposed in a space defined between a gas distribution plate and a base plate to moderate the corrosive radicals resulting from plasma ignition to reduce particle issues and metal contamination in the chamber. The porous insert is a conductive material, such as metal, used to reduce the gap electrical field strength, or may be a dielectric material such as ceramic, polytetrafluoroethylene, polyamide-imide, or other materials with a low dielectric loss and high electrical field strength under conditions of high frequency and strong electric fields. As such, the electrical breakdown threshold is enhanced. The porous insert may reduce and/or eliminate showerhead backside plasma ignition and may include multiple concentric narrow rings that cover gas holes of the gas distribution plate.

公开(公告)号：US20190115246A1

公开(公告)日：2019-04-18

申请号：US15843697

申请日：2017-12-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Michael R. RICE ,  James David CARDUCCI

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: Apparatus for shielding a substrate support in a semiconductor processing chamber. In some embodiments, the apparatus includes: a substrate support body with a substrate processing surface, a feedthrough assembly for supporting the substrate support body in the semiconductor processing chamber, and a conductive member that provides a conductive path from a lowermost portion of the feedthrough assembly to the substrate processing surface of the substrate support body. The conductive member is disposed symmetrically about the substrate support.

公开(公告)号：US20180335393A1

公开(公告)日：2018-11-22

申请号：US16051365

申请日：2018-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonard TEDESCHI ,  Kartik RAMASWAMY

IPC: G01N21/94 ,  H01L21/66 ,  G01N21/95 ,  H01L21/67

CPC classification number: G01N21/94 ,  G01N21/9501 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/20

Abstract: Embodiments include devices and methods for detecting particles in a wafer processing tool. In an embodiment, a particle monitoring device having a wafer form factor includes several micro sensors capable of operating in all pressure regimes, e.g., under vacuum conditions. The particle monitoring device may include a clock to output a time value when a parameter of a micro sensor changes in response to receiving a particle within a chamber of the wafer processing tool. A location of the micro sensor or the time value may be used to determine a source of the particle. Other embodiments are also described and claimed.

公开(公告)号：US20160372307A1

公开(公告)日：2016-12-22

申请号：US14742142

申请日：2015-06-17

Applicant: Applied Materials, Inc.

Inventor： YANG YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG ,  Shahid RAUF ,  Andrew NGUYEN ,  Kenneth S. COLLINS ,  Roger Alan LINDLEY

IPC: H01J37/32 ,  C23C14/48 ,  C23C16/458 ,  C23C16/505

CPC classification number: H01J37/32715 ,  H01J37/32165 ,  H01J37/32568 ,  H01J37/3299

Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

Abstract translation: 本文所述的实施方案提供了能够调整等离子体室内的等离子体的衬底支撑组件。 在一个实施例中，提供了一种用于调谐腔室中的等离子体的方法。 该方法包括向衬底支撑组件中的第一电极提供第一射频功率和直流电力，在与第一电极不同的位置处向衬底支撑组件中的第二电极提供第二射频功率，监测参数 的第一和第二射频功率，并且基于所监视的参数来调整第一和第二射频功率中的一个或两个。

公开(公告)号：US20150097486A1

公开(公告)日：2015-04-09

申请号：US14505065

申请日：2014-10-02

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Kartik RAMASWAMY ,  Yogananda SARODE VISHWANATH ,  Alexander Charles MARCACCI

IPC: H01L21/67 ,  H01J7/46

CPC classification number: H01J7/46 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32596

Abstract: A showerhead assembly includes a front plate having a front surface, a back surface and a plurality of first through holes connecting the front surface and the back surface, a back plate having a front surface, a back surface and a plurality of second through holes connecting the front surface and the back surface, and an adhesive layer joining the back surface of the front plate and the front surface of the back plate. The plurality of first through holes are aligned with the plurality of second through holes, and the front plate and the back plate are formed from dissimilar materials.

Abstract translation: 一种喷头组件，包括具有前表面，后表面和连接前表面和后表面的多个第一通孔的前板，具有前表面，后表面和后表面的多个第二通孔， 前表面和后表面，以及将前板的后表面和后板的前表面接合的粘合剂层。 多个第一通孔与多个第二通孔对准，前板和后板由不同的材料形成。