公开(公告)号：US11442364B2

公开(公告)日：2022-09-13

申请号：US16414648

申请日：2019-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing Hong Huang ,  Chien-Wei Wang ,  Shang-Wern Chang ,  Ching-Yu Chang

IPC: G03F7/38

Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.

公开(公告)号：US11215924B2

公开(公告)日：2022-01-04

申请号：US16522135

申请日：2019-07-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/40 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: A photoresist composition comprises a polymer resin, a photoactive compound, an organometallic compound, an enhancement additive, and a first solvent. The enhancement additive is an ionic surfactant, a non-ionic surfactant, or a second solvent having a boiling point of greater than 150° C.

公开(公告)号：US11143963B2

公开(公告)日：2021-10-12

申请号：US16719835

申请日：2019-12-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Wei-Han Lai ,  Tzu-Yang Lin ,  Ming-Hui Weng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/32 ,  G03F7/16 ,  G03F7/20

Abstract: The present disclosure provides NTD developers and corresponding lithography techniques that can overcome resolution, line edge roughness (LER), and sensitivity (RLS) tradeoff barriers particular to extreme ultraviolet (EUV) technologies, thereby achieving high patterning fidelity for advanced technology nodes. An exemplary lithography method includes forming a negative tone resist layer over a workpiece; exposing the negative tone resist layer to EUV radiation; and removing an unexposed portion of the negative tone resist layer in a negative tone developer, thereby forming a patterned negative tone resist layer. The negative tone developer includes an organic solvent having a log P value greater than 1.82. The organic solvent is an ester acetate derivative represented by R1COOR2. R1 and R2 are hydrocarbon chains having four or less carbon atoms. In some implementations, R1, R2, or both R1 and R2 are propyl functional groups, such as n-propyl, isopropyl, or 2-methylpropyl.

公开(公告)号：US11036137B2

公开(公告)日：2021-06-15

申请号：US16898681

申请日：2020-06-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/027 ,  G03F7/11 ,  G03F7/004 ,  G03F7/20 ,  H01L29/66 ,  G03F7/32 ,  G03F7/038 ,  G03F7/09 ,  H01L21/266 ,  G03F7/38 ,  G03F7/039 ,  G03F7/075

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an assist layer over a material layer. The assist layer includes a first polymer with a first polymer backbone, a floating group bonded to the first polymer backbone, and the floating group includes carbon fluoride (CxFy), and a second polymer. The method includes forming a resist layer over the assist layer, and the first polymer is closer to an interface between the assist layer and the resist layer than the second polymer. The method also includes patterning the resist layer.

公开(公告)号：US11003082B2

公开(公告)日：2021-05-11

申请号：US16027680

申请日：2018-07-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Chih Chen ,  Yahru Cheng ,  Ching-Yu Chang

IPC: G03F7/38 ,  H01L21/027 ,  G03F7/004 ,  H01L21/311 ,  H01L21/306 ,  H01L21/266 ,  H01L21/308 ,  H01L21/8234 ,  H01L21/3213 ,  H01L21/3215 ,  H01L21/3115 ,  H01L21/265 ,  G03F7/16 ,  G03F7/32 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  G03F7/095 ,  G03F7/09 ,  G03F7/075 ,  H01L29/66

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and providing a resist solution. The resist solution includes a plurality of first polymers and a plurality of second polymers, each of the first polymers includes a first polymer backbone, and a first acid-labile group (ALG) with a first activation energy bonded to the first polymer backbone. Each of the second polymers includes a second polymer backbone, and a second acid-labile group with a second activation energy bonded to the second polymer backbone, the second activation energy is greater than the first activation energy. The method includes forming a resist layer over the material layer, and the resist layer includes a top portion and a bottom portion, and the first polymers diffuse to the bottom portion, and the second polymers diffuse to the top portion.

公开(公告)号：US20210103220A1

公开(公告)日：2021-04-08

申请号：US17121261

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/26 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  G03F7/38 ,  G03F7/30 ,  G03F7/004

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

公开(公告)号：US10859915B2

公开(公告)日：2020-12-08

申请号：US16137742

申请日：2018-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Tzu-Yang Lin ,  Ya-Ching Chang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/11 ,  G03F7/20 ,  G03F7/075 ,  H01L21/027 ,  H01L29/66 ,  H01L29/10 ,  H01L21/02 ,  G03F7/16 ,  H01L29/78

Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.

公开(公告)号：US20200294801A1

公开(公告)日：2020-09-17

申请号：US16889506

申请日：2020-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/033 ,  H01L21/027 ,  G03F7/40

Abstract: A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer. The method further includes transferring a pattern including the first layer and the second layer to the substrate.

公开(公告)号：US10777681B2

公开(公告)日：2020-09-15

申请号：US16439534

申请日：2019-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L29/78 ,  G03F7/20 ,  H01L21/8234 ,  H01L29/66

Abstract: A method includes spin-coating a first metal-free layer over the substrate, depositing a metal-containing layer over the first metal-free layer, spin-coating a second metal-free layer over the first metal-containing layer, forming a photoresist layer over the second metal-free layer, the photoresist layer including a first metallic element, exposing the photoresist layer, and subsequently developing the photoresist layer to form a pattern. The metal-containing layer includes a second metallic element selected from zirconium, tin, lanthanum, or manganese, and the first metallic element is selected from zirconium, tin, cesium, barium, lanthanum, indium, silver, or cerium.

公开(公告)号：US10770293B2

公开(公告)日：2020-09-08

申请号：US16105934

申请日：2018-08-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chung Su ,  Yahru Cheng ,  Ching-Yu Chang

IPC: H01L21/027 ,  G03F7/16 ,  H01L21/033 ,  H01L21/768 ,  H01L21/311

Abstract: In a method of manufacturing a semiconductor device, a photo resist layer is formed over a substrate with underlying structures. The first photo resist layer is exposed to exposure radiation. The exposed first photo resist layer is developed with a developing solution. A planarization layer is formed over the developed photo resist layer. The underlying structures include concave portions, and a part of the concave portions is not filled by the developed first photo resist.