公开(公告)号：US20120234946A1

公开(公告)日：2012-09-20

申请号：US13484117

申请日：2012-05-30

Applicant: Gregory DeBrabander ,  Mark Nepomnishy

Inventor： Gregory DeBrabander ,  Mark Nepomnishy

IPC: B41J2/16 ,  B05B1/00

CPC classification number: B41J2/161 ,  B41J2/162 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B81B2201/052 ,  B81C1/00087

Abstract: Fluid ejection nozzles having a tapered section leading to a straight walled bore are described. Both the tapered section of the nozzle and the straight walled bore are formed from a single side of semiconductor layer so that the tapered section and the bore are aligned with one another, even when an array of nozzles are formed across a die and multiple dies are formed on a semiconductor substrate.

Abstract translation: 描述了具有导向直壁的锥形部分的流体喷射嘴。 喷嘴的锥形部分和直壁孔均由半导体层的单侧形成，使得锥形部分和孔彼此对准，即使在模具之间形成喷嘴阵列并且多个模具是 形成在半导体衬底上。

公开(公告)号：US08197029B2

公开(公告)日：2012-06-12

申请号：US12346698

申请日：2008-12-30

Applicant: Gregory Debrabander ,  Mark Nepomnishy

Inventor： Gregory Debrabander ,  Mark Nepomnishy

IPC: B41J2/135

CPC classification number: B41J2/161 ,  B41J2/162 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B81B2201/052 ,  B81C1/00087

Abstract: Fluid ejection nozzles having a tapered section leading to a straight walled bore are described. Both the tapered section of the nozzle and the straight walled bore are formed from a single side of semiconductor layer so that the tapered section and the bore are aligned with one another, even when an array of nozzles are formed across a die and multiple dies are formed on a semiconductor substrate.

Abstract translation: 描述了具有导向直壁的锥形部分的流体喷射嘴。 喷嘴的锥形部分和直壁孔均由半导体层的单侧形成，使得锥形部分和孔彼此对准，即使在模具之间形成喷嘴阵列并且多个模具是 形成在半导体衬底上。

公开(公告)号：US08084361B2

公开(公告)日：2011-12-27

申请号：US11755437

申请日：2007-05-30

Applicant: Tsung-Cheng Huang ,  Hua-Shu Wu ,  Fa-Yuan Chang ,  I-Ching Lin ,  Hsi-Lung Lee ,  Yuan-Hao Chien

Inventor： Tsung-Cheng Huang ,  Hua-Shu Wu ,  Fa-Yuan Chang ,  I-Ching Lin ,  Hsi-Lung Lee ,  Yuan-Hao Chien

IPC: H01L21/3213

CPC classification number: B81C1/00634 ,  B81B2201/052

Abstract: A method includes depositing a layer of a sacrificial material in a first region above a substrate. The first region of the substrate is separate from a second region of the substrate, where a corrosion resistant film is to be provided above the second region. The corrosion resistant film is deposited, so that a first portion of the corrosion resistant film is above the sacrificial material in the first region, and a second portion of the corrosion resistant film is above the second region. The first portion of the corrosion resistant film is removed by chemical mechanical polishing. The sacrificial material is removed from the first region using an etching process that selectively etches the sacrificial material, but not the corrosion resistant film.

Abstract translation: 一种方法包括在基底上方的第一区域中沉积牺牲材料层。 衬底的第一区域与衬底的第二区域分离，其中在第二区域上方设置耐腐蚀膜。 沉积耐腐蚀膜，使得耐腐蚀膜的第一部分在第一区域中的牺牲材料之上，并且耐腐蚀膜的第二部分高于第二区域。 通过化学机械抛光除去耐腐蚀膜的第一部分。 使用选择性蚀刻牺牲材料而不是耐腐蚀膜的蚀刻工艺从第一区域去除牺牲材料。

公开(公告)号：US07942508B2

公开(公告)日：2011-05-17

申请号：US12164349

申请日：2008-06-30

Applicant: Joseph A. Degroot ,  Peter Michael Gulvin ,  Jun Ma

Inventor： Joseph A. Degroot ,  Peter Michael Gulvin ,  Jun Ma

IPC: B41J2/045

CPC classification number: B41J2/14314 ,  B41J2/16 ,  B41J2/1626 ,  B41J2/1639 ,  B81B3/0051 ,  B81B2201/052 ,  B81B2203/0109 ,  B81B2203/04 ,  B81B2203/053

Abstract: The present application is directed to electrostatic actuators, and methods of making electrostatic actuators. In one embodiment, an electrostatic actuator of the present application can include an electrode layer and a mechanical member. The electrode layer can include a removed portion that is free of a landing pad. The mechanical member can be positioned in proximity to the electrode layer so as to provide a gap therebetween. The mechanical member can further include a dimple structure protruding out into the gap and aligned with the removed portion of the electrode layer. When in operation, the mechanical member can be capable of deflecting toward the electrode layer. The electrostatic actuator can be used in a fluid drop ejector for ink jet recording or printing devices.

Abstract translation: 本申请涉及静电致动器以及制造静电致动器的方法。 在一个实施例中，本申请的静电致动器可以包括电极层和机械构件。 电极层可以包括没有着陆垫的去除部分。 机械构件可以位于电极层附近，以便在它们之间提供间隙。 机械构件还可以包括突出到间隙中并与电极层的去除部分对准的凹坑结构。 当操作时，机械构件能够朝向电极层偏转。 静电致动器可用于喷墨记录或打印装置的液滴喷射器。

公开(公告)号：US07855151B2

公开(公告)日：2010-12-21

申请号：US11894316

申请日：2007-08-21

Applicant: Swaroop K. Kommera ,  Siddhartha Bhowmik ,  Richard J. Oram ,  Sriram Ramamoorthi ,  David M. Braun

Inventor： Swaroop K. Kommera ,  Siddhartha Bhowmik ,  Richard J. Oram ,  Sriram Ramamoorthi ,  David M. Braun

IPC: H01L21/461

CPC classification number: B81C1/00087 ,  B41J2/16 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B81B2201/052 ,  H01L21/76898

Abstract: A slot is formed that reaches through a first side of a silicon substrate to a second side of the silicon substrate. A trench is laser patterned. The trench has a mouth at the first side of the silicon substrate. The trench does not reach the second side of the silicon substrate. The trench is dry etched until a depth of at least a portion of the trench is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot. The wet etch etches silicon from all surfaces of the trench.

Abstract translation: 形成通过硅衬底的第一侧到达硅衬底的第二侧的槽。 沟槽是激光图案。 沟槽在硅衬底的第一侧具有口。 沟槽没有到达硅衬底的第二面。 沟槽被干蚀刻直到沟槽的至少一部分的深度大致延伸到硅衬底（12）的第二侧。 执行湿蚀刻以完成槽的形成。 湿蚀刻从沟槽的所有表面蚀刻硅。

公开(公告)号：US20100183885A1

公开(公告)日：2010-07-22

申请号：US12665028

申请日：2008-06-16

Applicant: Mitsuru Sato ,  Yoshiaki Mori

Inventor： Mitsuru Sato ,  Yoshiaki Mori

IPC: B32B37/02 ,  B32B38/00 ,  B05B1/00 ,  B32B9/04

CPC classification number: C09J5/02 ,  B23K26/0624 ,  B23K26/244 ,  B23K26/26 ,  B23K2101/42 ,  B23K2103/56 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1634 ,  B81B2201/052 ,  B81C3/001 ,  B81C2203/036 ,  C09J2400/146 ,  H01L21/187 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2225/0651 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  Y10T156/10 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A bonding method of silicon base members is provided. The bonding method of silicon base members comprises: applying an energy to a first silicon base member including Si—H bonds to selectively cut the Si—H bonds so that the first silicon base member is cleaved and divided to one silicon base member and the other silicon base member, and the one silicon base member having a cleavage surface and dangling bonds of silicon obtained by cutting the Si—H bonds; and bonding the cleavage surface of the one silicon base member and a surface of a second silicon base member on which dangling bonds of silicon are exposed to thereby bond the cleavage surface and the surface together through their dangling bonds.

Abstract translation: 提供硅基部件的接合方法。 硅基部件的接合方法包括：向包括Si-H键的第一硅基部件施加能量以选择性地切割Si-H键，使得第一硅基部件被切割并分成一个硅基部件，而另一个硅基部件 硅基部件和具有通过切割Si-H键获得的硅的断裂面和悬挂键的一个硅基部件; 并且将一个硅基部件的解理面和硅的悬挂键露出的第二硅基部件的表面接合，从而通过其悬挂键将解理面和表面结合在一起。

公开(公告)号：US07691746B2

公开(公告)日：2010-04-06

申请号：US11831699

申请日：2007-07-31

Applicant: Siddhartha Bhowmik ,  Steven E. Kelly

Inventor： Siddhartha Bhowmik ,  Steven E. Kelly

IPC: H01L21/768

CPC classification number: B81B3/0072 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B81B2201/052

Abstract: A silicon nitride layer is formed on at least a back side of a silicon wafer substrate of a semiconductor device. An oxide layer is formed on at least the silicon nitride layer on the back side of the substrate. The oxide layer protects the silicon nitride layer during processing of the device. The oxide layer is removed prior to packaging the device. After components have been formed on a front side of the substrate opposite the back side, packaging is attached to the silicon nitride layer. The components provide a functionality of the device. The silicon nitride layer completely remains on the back side of the substrate after fabrication of the device has been completed. The silicon nitride layer is adapted to minimize and does minimize bowing of the device.

Abstract translation: 在半导体器件的硅晶片衬底的至少背面上形成氮化硅层。 至少在衬底背面的氮化硅层上形成氧化物层。 氧化物层在器件的处理期间保护氮化硅层。 在包装装置之前去除氧化物层。 在与背面相对的基板的正面形成部件之后，将封装附着在氮化硅层上。 组件提供了设备的功能。 在完成器件的制造之后，氮化硅层完全保留在衬底的背面。 氮化硅层适于使装置的弯曲最小化并使其最小化。

公开(公告)号：US20090251508A1

公开(公告)日：2009-10-08

申请号：US12391962

申请日：2009-02-24

Applicant: Kia Silverbrook

Inventor： Kia Silverbrook

IPC: B41J2/14 ,  B41J2/05

CPC classification number: B41J2/1606 ,  B41J2/1433 ,  B81B3/001 ,  B81B2201/052

Abstract: An inkjet printer with a nozzle plate that has an exterior surface with formations for reducing its co-efficient of static friction. By reducing the co-efficient of static friction, there is less likelihood that paper dust or other contaminants will clog the nozzles in the nozzle plate. Static friction, or “stiction” as it has become known, allows dust particles to “stick” to nozzle plates and thereby clog nozzles. By patterning the exterior of the nozzle plate with raised formations, dust particles can only contact the outer extremities of each formation. This reduces friction between the particles and the nozzle plate so that any particles that contact the plate are less likely to attach, and if they do attach, they are more likely to be removed by printhead maintenance cleaning cycles.

Abstract translation: 具有喷嘴板的喷墨打印机，其具有用于降低其静摩擦系数的结构的外表面。 通过降低静摩擦的有效性，纸屑或其他污染物将堵塞喷嘴板中的喷嘴的可能性较小。 静摩擦或“静摩擦”已经知道，使得灰尘颗粒“粘”到喷嘴板上，从而阻塞喷嘴。 通过用凸起的地层图案化喷嘴板的外部，灰尘颗粒只能接触每个地层的外端。 这减少了颗粒和喷嘴板之间的摩擦，使得接触板的任何颗粒不太可能附着，并且如果它们附着，则它们更可能通过打印头维护清洁循环被去除。

公开(公告)号：US20090169190A1

公开(公告)日：2009-07-02

申请号：US12005862

申请日：2007-12-27

Applicant: Ming Fang ,  Fuchao Wang

Inventor： Ming Fang ,  Fuchao Wang

IPC: F24H1/10 ,  H01L21/02

CPC classification number: B81C1/00119 ,  B41J2/14056 ,  B41J2/14072 ,  B41J2/14137 ,  B41J2/16 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1639 ,  B81B1/006 ,  B81B2201/052 ,  B81B2201/058 ,  B81C2201/013 ,  B81C2203/075 ,  H01L28/20 ,  Y10T29/41 ,  Y10T29/49401 ,  Y10T29/49826

Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

Abstract translation: 集成半导体加热组件包括半导体衬底，形成在其中的腔室以及与腔室流体连通的出口，允许流体响应于加热室而离开腔室。 集成加热组件包括邻近腔室的第一加热元件，该第一加热元件可以产生高于选定阈值的热量，并将腔室中的流体朝向出口偏压。 第二加热元件邻近出口定位以产生高于所选阈值的热量，便于流体通过出口远离腔室的运动。 添加第二加热元件减少了每个加热元件发出的热量，并使吸热材料的厚度最小化到出口的开口端。 由于这样的材料是昂贵的，所以这降低了组件的制造成本和零售价格，同时提高了其效率和使用寿命。

公开(公告)号：US20080053954A1

公开(公告)日：2008-03-06

申请号：US11936060

申请日：2007-11-06

Applicant: Kia Silverbrook

Inventor： Kia Silverbrook

IPC: C03C25/68

CPC classification number: B81C1/00142 ,  B41J2/1404 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/052

Abstract: Provided is a substrate preparation method for a micro-electromechanical system (MEMS) fabrication process. The method includes the step of depositing at least four metal layers interspersed with interlayer dielectric (ILD) layers onto a silicon wafer substrate. A passivation layer is deposited onto an outermost metal layer and at least a portion of the passivation layer is masked with a photoresist. A pit is etched through the photoresist in the substrate, said pit having a base and sidewalls. Etching is carried out along an edge of the substrate to expose the last metal layer to define bonding pads. A step of etching is carried out on either side of the pit to expose the outermost metal layer to define electrode portions. The bonding pads are for operatively connecting a microprocessor for controlling a heater element suspended in the pit between the electrode portions.

Abstract translation: 提供了一种用于微机电系统（MEMS）制造工艺的衬底制备方法。 该方法包括在硅晶片衬底上沉积散布有层间电介质（ILD）层的至少四个金属层的步骤。 钝化层沉积在最外层的金属层上，钝化层的至少一部分被光刻胶掩蔽。 通过衬底中的光致抗蚀剂蚀刻凹坑，所述凹坑具有基底和侧壁。 沿着衬底的边缘进行蚀刻以暴露最后的金属层以限定焊盘。 在凹坑的任一侧进行蚀刻步骤以露出最外层金属层以限定电极部分。 接合焊盘用于可操作地连接微处理器，用于控制悬挂在电极部分之间的凹坑中的加热器元件。