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    Method of anodizing silicon substrate and method of producing acceleration sensor
    101.
    发明授权
    Method of anodizing silicon substrate and method of producing acceleration sensor 失效
    阳极氧化硅基板的方法及加工传感器的制造方法

    公开(公告)号：US06399410B1

    公开(公告)日：2002-06-04

    申请号：US09509448

    申请日：2000-03-28

    Applicant: Hitoshi Iwata ,  Makoto Murate

    Inventor： Hitoshi Iwata ,  Makoto Murate

    IPC: H01L2100

    CPC classification number: B81C1/005 ,  B81B2201/0235 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01P15/0802

    Abstract: A method for anodizing silicon substrate includes forming an n-type silicon embedded layer (21) made of n-type silicon on a predetermined area of a first surface of the p-type single crystal silicon substrate (2). N-type silicon layers (4, 6) are formed on the upper surface of the p-type single crystal silicon substrate (2) and on the n-type silicon embedded layer (21). Silicon diffusion layers (5, 7) containing high-concentration p-type impurities are formed on predetermined areas of the n-type silicon layers (4, 6) to contact the n-type silicon embedded layer (21). An electrode layer (13) is formed on the lower surface of the p-type silicon substrate (2). The anode of a DC power source (15) is connected to the electrode layer (13), and the cathode is connected to a counter electrode (23), which is opposed to the p-type silicon substrate (2). A current is intensively applied to an area corresponding to an opening (21a) of the n-type silicon layer (4) in a direction from the lower surface to the upper surface of the p-type single crystal silicon substrate (2), which makes the area porous.

    Abstract translation: 一种用于阳极氧化硅衬底的方法包括在p型单晶硅衬底（2）的第一表面的预定区域上形成由n型硅制成的n型硅嵌入层（21）。 在p型单晶硅衬底（2）的上表面和n型硅嵌入层（21）上形成N型硅层（4,6）。 在n型硅层（4,6）的预定区域上形成含有高浓度p型杂质的硅扩散层（5,7），以与n型硅嵌入层（21）接触。 在p型硅衬底（2）的下表面上形成电极层（13）。 直流电源（15）的阳极与电极层（13）连接，阴极与与p型硅基板（2）相对的对置电极（23）连接。 在从p型单晶硅衬底（2）的下表面到上表面的方向上，电流强烈地施加到与n型硅层（4）的开口（21a）相对应的区域， 使得该区域多孔。

    Deposited thin film void-column network materials
    102.
    发明授权
    Deposited thin film void-column network materials 有权
    沉积的薄膜空心柱网络材料

    公开(公告)号：US06399177B1

    公开(公告)日：2002-06-04

    申请号：US09580105

    申请日：2000-05-30

    Applicant: Stephen J. Fonash ,  Ali Kaan Kalkan ,  Sanghoon Bae

    Inventor： Stephen J. Fonash ,  Ali Kaan Kalkan ,  Sanghoon Bae

    IPC: B32B700

    CPC classification number: B81C1/0038 ,  B81C1/00047 ,  B81C2201/0115 ,  B81C2201/0139 ,  B81C2201/018 ,  C23C16/24 ,  C23C16/511 ,  G01N21/17 ,  G01N27/121 ,  G01N27/44717 ,  G01N30/6095 ,  H01J49/0418 ,  Y10T428/24174 ,  Y10T428/249953

    Abstract: A novel porous film is disclosed comprising a network of silicon columns in a continuous void which may be fabricated using high density plasma deposition at low temperatures, i.e., less than about 250° C. This silicon film is a two-dimensional nano-sized array of rodlike columns. This void-column morphology can be controlled with deposition conditions and the porosity can be varied up to 90%. The simultaneous use of low temperature deposition and etching in the plasma approach utilized, allows for the unique opportunity of obtaining columnar structure, a continuous void, and polycrystalline column composition at the same time. Unique devices may be fabricated using this porous continuous film by plasma deposition of this film on a glass, metal foil, insulator or plastic substrates.

    Abstract translation: 公开了一种新颖的多孔膜，其包括在连续空隙中的硅柱网络，其可以在低温下（即小于约250℃）下使用高密度等离子体沉积来制造。该硅膜是二维纳米尺寸阵列 的棒状柱。 这种空隙柱形态可以用沉积条件控制，并且孔隙率可以变化高达90％。 在所采用的等离子体方法中同时使用低温沉积和蚀刻允许在同时获得柱状结构，连续空隙和多晶柱组成的独特机会。 可以使用这种多孔连续膜通过将该膜等离子体沉积在玻璃，金属箔，绝缘体或塑料基底上来制造独特的器件。

    Micro-machining minute hollow using native oxide membrane
    103.
    发明授权
    Micro-machining minute hollow using native oxide membrane 失效
    使用天然氧化膜的微加工微型中空

    公开(公告)号：US5909048A

    公开(公告)日：1999-06-01

    申请号：US837107

    申请日：1997-04-14

    Applicant: Rinji Sugino

    Inventor： Rinji Sugino

    IPC: C23F1/12 ,  B81B1/00 ,  B81C1/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L29/84 ,  H01L29/06

    CPC classification number: B81C1/00047 ,  B81C1/00626 ,  H01J21/105 ,  H01L21/32137 ,  B81B2203/0315 ,  B81C2201/0115

    Abstract: A native oxide film is formed on the surface of a silicon substrate. The native oxide film has at least island-shaped imperfect SiO.sub.2 regions not formed with a perfect SiO.sub.2 film. Before the native oxide film is formed, a mask layer having a necessary opening is formed over the silicon substrate, according to necessity. The silicon substrate is etched in a vapor phase via the imperfect SiO.sub.2 regions of the native oxide film to form a hollow under the native oxide film at least at a partial region thereof. An upper film is formed on the native oxide film to cover and close the imperfect SiO.sub.2 regions. In this manner, a minute hollow can be formed in the silicon substrate with good controllability.

    Abstract translation: 在硅衬底的表面上形成自然氧化膜。 天然氧化膜至少具有未形成完美SiO 2膜的岛状不完全SiO 2区域。 在形成自然氧化膜之前，根据需要，在硅衬底上形成具有所需开口的掩模层。 硅衬底通过自然氧化膜的不完全的SiO 2区域在气相中蚀刻，以至少在其部分区域在自然氧化膜下形成中空。 在自然氧化膜上形成上膜，以覆盖和封闭不完美的SiO 2区域。 以这种方式，可以在硅衬底中形成具有良好可控性的微小中空。

    Pseudo SOI process
    105.
    发明授权
    Pseudo SOI process 有权

    公开(公告)号：US10053360B1

    公开(公告)日：2018-08-21

    申请号：US15685879

    申请日：2017-08-24

    Applicant: Kionix, Inc.

    Inventor： Martin Heller

    IPC: H01L21/00 ,  B81C1/00

    CPC classification number: B81C1/00047 ,  B81C1/00095 ,  B81C2201/0109 ,  B81C2201/0115 ,  B81C2201/0132 ,  B81C2201/0171 ,  B81C2201/0178

    Abstract: A method of processing a semiconductor substrate having a first conductivity type includes, in part, forming a first implant region of a second conductivity type in the semiconductor substrate where the first implant region is characterized by a first depth, forming a second implant region of the first conductivity type in the semiconductor substrate where the second implant region is characterized by a second depth smaller than the first depth, forming a porous layer within the semiconductor substrate where the porous layer is adjacent the first implant region, and growing an epitaxial layer on the semiconductor substrate thereby causing the porous layer to collapse and form a cavity.

    Single silicon wafer micromachined thermal conduction sensor
    108.
    发明授权
    Single silicon wafer micromachined thermal conduction sensor 有权
    单晶硅微加工热传导传感器

    公开(公告)号：US09580305B2

    公开(公告)日：2017-02-28

    申请号：US15237300

    申请日：2016-08-15

    Applicant: Xiang Zheng Tu

    Inventor： Xiang Zheng Tu

    IPC: G01N25/18 ,  B81C1/00 ,  G01N27/18

    CPC classification number: B81C1/0069 ,  B81B2201/0214 ,  B81C2201/0115 ,  G01N27/18

    Abstract: A single silicon wafer micromachined thermal conduction sensor is described. The sensor consists of a heat transfer cavity with a flat bottom and an arbitrary plane shape, which is created in a silicon substrate. A heated resistor with a temperature dependence resistance is deposed on a thin film bridge, which is the top of the cavity. A heat sink is the flat bottom of the cavity and parallel to the bridge completely. The heat transfer from the heated resistor to the heat sink is modulated by the change of the thermal conductivity of the gas or gas mixture filled in the cavity. This change can be measured to determine the composition concentration of the gas mixture or the pressure of the air in a vacuum system.

    Abstract translation: 描述了单个硅晶片微加工热传导传感器。 传感器由在硅衬底中产生的具有平坦底部和任意平面形状的传热腔组成。 具有温度依赖性电阻的加热电阻器被放置在薄膜桥上，该薄膜桥是空腔的顶部。 散热器是空腔的平坦底部，并且完全平行于桥。 从加热的电阻器到散热器的热传递通过填充在空腔中的气体或气体混合物的热导率的变化来调节。 可以测量该变化以确定气体混合物的组成浓度或真空系统中空气的压力。

    Single silicon wafer micromachined thermal conduction sensor
    109.
    发明授权
    Single silicon wafer micromachined thermal conduction sensor 有权
    单晶硅微加工热传导传感器

    公开(公告)号：US09440847B2

    公开(公告)日：2016-09-13

    申请号：US14045555

    申请日：2013-10-03

    Applicant: Xiang Zheng Tu

    Inventor： Xiang Zheng Tu

    IPC: G01N25/18 ,  B81C1/00 ,  G01N27/18

    CPC classification number: B81C1/0069 ,  B81B2201/0214 ,  B81C2201/0115 ,  G01N27/18

    Abstract: A single silicon wafer micromachined thermal conduction sensor is described. The sensor consists of a heat transfer cavity with a flat bottom and an arbitrary plane shape, which is created in a silicon substrate. A heated resistor with a temperature dependence resistance is deposed on a thin film bridge, which is the top of the cavity. A heat sink is the flat bottom of the cavity and parallel to the bridge completely. The heat transfer from the heated resistor to the heat sink is modulated by the change of the thermal conductivity of the gas or gas mixture filled in the cavity. This change can be measured to determine the composition concentration of the gas mixture or the pressure of the air in a vacuum system.

    Abstract translation: 描述了单个硅晶片微加工热传导传感器。 传感器由在硅衬底中产生的具有平坦底部和任意平面形状的传热腔组成。 具有温度依赖性电阻的加热电阻器被放置在薄膜桥上，该薄膜桥是空腔的顶部。 散热器是空腔的平坦底部，并且完全平行于桥。 从加热的电阻器到散热器的热传递通过填充在空腔中的气体或气体混合物的热导率的变化来调节。 可以测量该变化以确定气体混合物的组成浓度或真空系统中空气的压力。

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